Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties

2006 ◽  
Vol 527-529 ◽  
pp. 1175-1178 ◽  
Author(s):  
Chiharu Ota ◽  
Johji Nishio ◽  
Tetsuo Hatakeyama ◽  
Takashi Shinohe ◽  
Kazutoshi Kojima ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Schottky Barrier Diodes ◽  
P Type ◽  
The Relationship ◽  
Unipolar Devices ◽  
Theoretical Limitation ◽  
State Resistance ◽  
Floating Layer

4H-SiC floating junction Schottky barrier diodes (Super-SBDs) were fabricated. It was found that their properties are closest to the theoretical limitation, defined by the relationship between specific on-state resistance and breakdown voltage of 4H SiC-unipolar devices. They have a p-type floating layer designed as line-and-spacing. The specific on-state resistances of Super-SBDs with a few micrometers of spacing width were found to be nearly equal to those of conventional SBDs without p-type floating layer. The breakdown voltages of Super-SBDs were higher than those of conventional SBDs. Accordingly the properties of Super-SBDs have improved the trade-off between specific on-state resistance and breakdown voltage, and the highest value to date for Baliga’s Figure of Merit (BFOM) has been obtained.

High-Breakdown-Voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structure

2009 ◽  
Vol 615-617 ◽  
pp. 963-966 ◽  
Author(s):  
Taku Horii ◽  
Tomihito Miyazaki ◽  
Yu Saito ◽  
Shin Hashimoto ◽  
Tatsuya Tanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Schottky Barrier Diodes ◽  
Field Plate ◽  
Forward Current ◽  
Low Dislocation Density ◽  
Current Voltage ◽  
Dislocation Densities ◽  
Current Voltage Characteristics

Gallium nitride (GaN) vertical Schottky barrier diodes (SBDs) with a SiNx field plate (FP) structure on low-dislocation-density GaN substrates have been designed and fabricated. We have successfully achieved the SBD breakdown voltage (Vb) of 680V with the FP structure, in contrast to that of 400V without the FP structure. There was no difference in the forward current-voltage characteristics with a specific on-resistance (Ron) of 1.1mcm2. The figure of merit V2b/Ron of the SBD with the FP structure was 420MWcm-2. The FP structure and the high quality drift layers grown on the GaN substrates with low dislocation densities have greatly contributed to the obtained results.

Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)

2009 ◽  
Vol 615-617 ◽  
pp. 655-658 ◽  
Author(s):  
Chiharu Ota ◽  
Johji Nishio ◽  
Kazuto Takao ◽  
Tetsuo Hatakeyama ◽  
Takashi Shinohe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Dynamic Characteristics ◽  
Figure Of Merit ◽  
Doping Concentration ◽  
Drift Region ◽  
Static Characteristics ◽  
Low Loss ◽  
Significant Lowering ◽  
Floating Layer

Previous simulation works and experiments on the loss of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) show that the loss is related to the doping concentration in the drift region and the pattern of the floating layer. The effect of the doping concentration for lowering the loss is characterized the breakdown voltage (Vbd) and the on-state resistances (RonS) of the Super-SBDs based on Baliga’s figure of Merit (BFOM). Experimental devices with two doping concentrations in the drift region are fabricated to investigate the static characteristics: Vbd and RonS. The Vbd of the Super-SBDs is close to the simulation result, near 3000 V. However the tendency of the Vbd by the doping concentration is not similar to the simulation result. And the RonS are about 3.22 mcm2 which is higher than that of simulation result. The doping concentration optimized in this study does not show significant lowering loss and the design of the floating layer in the termination region affect the low-loss static characteristics of the Super-SBD. In addition, adopting PiN structure with floating layer (Super-PiN) affects the low-loss dynamic characteristics, optimizing the doping concentration in the drift region. We conclude that the fabricated Super-SBDs with the floating layer in the termination region, the drift region with a doping concentration of 1.01016 cm-3 and mesa-shaped termination structure, have excellent Vbd of 2990 V which is almost same as that of simulation result and RonS of 3.22 mcm2.

High Voltage Schottky Barrier Diodes on P-Type SiC using Metal-Overlap on a Thick Oxide Layer as Edge Termination

1999 ◽  
Vol 572 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
S. Soloviev ◽  
T. S. Sudarshan
Keyword(s):  
Schottky Barrier ◽  
Oxide Layer ◽  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Schottky Barrier Diodes ◽  
Edge Termination ◽  
Forward Current ◽  
Current Voltage ◽  
Thick Oxide Layer ◽  
P Type

ABSTRACTP-type 6H SiC Schottky barrier diodes with good rectifying characteristics upto breakdown voltage as high as 1000V have been successfully fabricated using metal-overlap over a thick oxide layer (∼ 6000 Å) as edge termination and Al as the barrier metal. The influence of the oxide layer edge termination in improving the reverse breakdown voltage as well as the forward current – voltage characteristics is presented. The terminated Schottky diodes indicate a factor of two higher breakdown voltage and 2–3 times larger forward current densities than those without edge termination. The specific series resistance of the unterminated diodes was ∼228 mΩ-cm2, while that of the terminated diodes was ∼84 mΩ-cm2.

Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

2007 ◽  
Vol 556-557 ◽  
pp. 881-884 ◽  
Author(s):  
Chiharu Ota ◽  
Johji Nishio ◽  
Tetsuo Hatakeyama ◽  
Takashi Shinohe ◽  
Kazutoshi Kojima ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Figure Of Merit ◽  
Device Simulation ◽  
Schottky Barrier Diodes ◽  
World Record ◽  
Device Structure ◽  
The World ◽  
Fabrication And Characterization

The calculation for 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) was carried out by device simulation and the optimized device structure was fabricated. The best characteristics of the Super-SBDs were breakdown voltage of 2700V and the specific on-resistance of 2.57m*cm2. The world record of Bariga’s Figure of Merit (BFOM) for SiC-SBD expressed by 4Vbd 2/Ron was improved to 11,354MW/cm2.

scholarly journals The Influence of Anode Trench Geometries on Electrical Properties of AlGaN/GaN Schottky Barrier Diodes

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 282
Author(s):  
Xiuxia Yang ◽  
Zhe Cheng ◽  
Zhiguo Yu ◽  
Lifang Jia ◽  
Lian Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Barrier Layer ◽  
Contact Area ◽  
Reverse Current ◽  
Schottky Barrier Diodes ◽  
Algan Barrier ◽  
Algan Barrier Layer ◽  
State Resistance

AlGaN/GaN lateral Schottky barrier diodes (SBDs) with three different anode geometries (stripe, circular, and the conventional plane one) and different rows of anode trenches are fabricated and electrically characterized to study the influence of anode trench geometries. The SBDs with anode trenches exhibit the lower on-state resistance (RON) than that with the conventional plane one. It can be explained that the anode trenches made the Schottky metal directly contact to the 2DEG at the sidewall of the AlGaN/GaN interface, removing the AlGaN barrier layer in the conventional plane anode. In addition, the RON of the SBDs with circular trenches is smaller than that of the SBDs with stripe ones. Furthermore, the RON decreases with the increasing rows of anode trenches, which can be attributed to the increased contact area between the Schottky metal and the 2DEG. For the reverse characteristics, the anode trenches do not lead to performance degradation. The fabricated devices exhibit the low reverse current (IR, IR < 1 μA/mm), and the breakdown voltage (VBK) remains unchanged with different anode geometries.

scholarly journals Mobility Models Based on Forward Current-Voltage Characteristics of P-type Pseudo-Vertical Diamond Schottky Barrier Diodes

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 598
Author(s):  
Min-Woo Ha ◽  
Ogyun Seok ◽  
Hojun Lee ◽  
Hyun Ho Lee
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Voltage Drop ◽  
Mobility Model ◽  
Mobility Models ◽  
Schottky Barrier Diodes ◽  
Forward Voltage ◽  
Forward Voltage Drop ◽  
P Type

Compared with silicon and silicon carbide, diamond has superior material parameters and is therefore suitable for power switching devices. Numerical simulation is important for predicting the electric characteristics of diamond devices before fabrication. Here, we present numerical simulations of p-type diamond pseudo-vertical Schottky barrier diodes using various mobility models. The constant mobility model, based on the parameter μconst, fixed the hole mobility absolutely. The analytic mobility model resulted in temperature- and doping concentration-dependent mobility. An improved model, the Lombard concentration, voltage, and temperature (CVT) mobility model, considered electric field-dependent mobility in addition to temperature and doping concentration. The forward voltage drop at 100 A/cm2 using the analytic and Lombard CVT mobility models was 2.86 and 5.17 V at 300 K, respectively. Finally, we used an empirical mobility model based on experimental results from the literature. We also compared the forward voltage drop and breakdown voltage of the devices, according to variations in p- drift layer thickness and cathode length. The device successfully achieved a low specific on-resistance of 6.8 mΩ∙cm2, a high breakdown voltage of 1190 V, and a high figure-of-merit of 210 MW/cm2.

Ga2O3 field-plated schottky barrier diodes with a breakdown voltage of over 1 kV

2016 ◽  
Author(s):  
Keita Konishi ◽  
Ken Goto ◽  
Quang Tu Thieu ◽  
Rie Togashi ◽  
Hisashi Murakami ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Schottky Barrier Diodes

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

2002 ◽  
Vol 742 ◽  
Author(s):  
T. Kimoto ◽  
K. Hashimoto ◽  
K. Fujihira ◽  
K. Danno ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Schottky Barrier Diodes ◽  
Homoepitaxial Growth ◽  
Nitrogen Incorporation ◽  
Impurity Doping ◽  
Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

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