Material Properties of GaN Films Grown on SiC/SOI Substrate
2008 ◽
Vol 600-603
◽
pp. 1313-1316
Keyword(s):
X Ray
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Material properties of GaN thin films grown on 3C-SiC/semiconductor-on-insulator (SOI) substrate, by metalorganic chemical vapor deposition technology, are studied by X-ray diffraction, photoluminescence and Raman scattering, with data indicating the high quality of GaN films. Our results have shown that SiC/SOI structures obtained by carbonization have the potential to serve as useful substrates for GaN growth.
Characteristics of Gallium Oxide Nanowires Synthesized by the Metalorganic Chemical Vapor Deposition
2007 ◽
Vol 539-543
◽
pp. 1230-1235
◽
2003 ◽
Vol 42
(Part 1, No. 8)
◽
pp. 4943-4948
◽
2004 ◽
Vol 22
(4)
◽
pp. 2165
◽
1997 ◽
Vol 36
(Part 1, No. 4A)
◽
pp. 2018-2021
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