Solution Growth of Off-Axis 4H-SiC for Power Device Application

Solution growth on off-axis 4H-SiC sublimation substrate as a buffer layer for the subsequent CVD epitaxial growth was investigated. Dislocation conversion and propagation from the substrate to the CVD epitaxial layer through the solution grown buffer layer was inspected by molten KOH etch pit observation. Effective dislocation conversion from BPD to TED as an effect of the buffer layer insertion with no drastic change in the total EPD was confirmed.

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LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.141 ◽

2009 ◽

Vol 615-617 ◽

pp. 141-144 ◽

Cited By ~ 1

Author(s):

Ryo Hattori ◽

Kazuhito Kamei ◽

Kazuhiko Kusunoki ◽

Nobuyoshi Yashiro ◽

S. Shimosaki

Keyword(s):

Liquid Phase ◽

Epitaxial Layer ◽

Liquid Phase Epitaxy ◽

Basal Plane ◽

Power Device ◽

Device Application ◽

Basal Plane Dislocation ◽

Low Nitrogen

LPE (liquid phase epitaxy) growth of low nitrogen unintentionally doped SiC epitaxial layer on on-axis 4H-SiC substrate using nitrogen getter Si based solution was investigated to realize basal plane dislocation (BPD) free epitaxial layer. A significant reduction in BPD was demonstrated.

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Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.147 ◽

2006 ◽

Vol 527-529 ◽

pp. 147-152 ◽

Cited By ~ 5

Author(s):

Kazutoshi Kojima ◽

Tomohisa Kato ◽

Satoshi Kuroda ◽

Hajime Okumura ◽

Kazuo Arai

Keyword(s):

Epitaxial Growth ◽

Epitaxial Layer ◽

Basal Plane ◽

Growth Conditions ◽

Epitaxial Layers ◽

Etch Pit Density ◽

High Conversion Efficiency ◽

Etch Pit ◽

Edge Dislocations

We have investigated the generation of new dislocations during the epitaxial growth of 4H-SiC layers. Dislocations were mainly propagated from the substrate into the epitaxial layer. However, it was found that some amount of new threading edge dislocations (TEDs) and basal plane dislocations (BPDs) were generated during the epitaxial growth. The generation of those dislocations appeared to depend on the in-situ H2 etching conditions, not the epitaxial growth conditions. By optimizing in-situ H2 etching condition, we were able to effectively suppress the generation of new dislocations during epitaxial growth, and obtain 4H-SiC epitaxial layers which have the equivalent etch pit density (EPD) to the substrates. Our additional investigation of the conversion of BPDs to TEDs revealed that its efficiency similarly depends on in-situ H2 etching. We were able to obtain a high conversion efficiency of 97 % by optimizing the in-situ H2 etching conditions before epitaxial growth.

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HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.1317 ◽

2008 ◽

Vol 600-603 ◽

pp. 1317-1320 ◽

Cited By ~ 1

Author(s):

Toshiyuki Isshiki ◽

Koji Nishio ◽

Yoshihisa Abe ◽

Jun Komiyama ◽

Shunichi Suzuki ◽

...

Keyword(s):

Epitaxial Growth ◽

Buffer Layer ◽

Epitaxial Layer ◽

Growth Mechanism ◽

Cross Sectional ◽

Plane Parallel

Epitaxial growth of AlN was carried out by MOVPE method on SiC/Si buffered substrates prepared by using various Si surfaces of (110), (211) and (001). Cross-sectional HRTEM analyses of the interfaces between SiC buffer layer and AlN epitaxial layer disclosed characteristic nanostructures related growth mechanism on the each substrate. In the case of Si(110) and Si(211) substrate, hexagonal AlN grew directly on SiC(111) plane with AlN(0001) plane parallel to it. In contrast, growth on Si(001) substrate gave complicate structure at AlN/SiC interface. Hexagonal AlN didn’t grow directly but cubic AlN appeared with a pyramidal shape on SiC(001). When the cubic AlN grew 10nm in height, structure of growing AlN crystal changed to hexagonal type on the pyramidal {111} planes of cubic AlN.

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Voids-Free 3C-SiC/Si Interface for High Quality Epitaxial Layer

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.159 ◽

2016 ◽

Vol 858 ◽

pp. 159-162 ◽

Cited By ~ 1

Author(s):

Ruggero Anzalone ◽

Nicolò Piluso ◽

Riccardo Reitano ◽

Alessandra Alberti ◽

Patrick Fiorenza ◽

...

Keyword(s):

Silicon Carbide ◽

Low Temperature ◽

Epitaxial Growth ◽

Buffer Layer ◽

Epitaxial Layer ◽

High Quality ◽

Wafer Curvature ◽

Carbonization Process ◽

Cubic Silicon Carbide ◽

Sic Film

A study of the carbonization process and of a low temperature buffer layer on the Cubic Silicon Carbide (3C-SiC) epitaxial growth has been reported in this work. From this study it has been evidenced the importance of the C/H2 ratio and of the buffer layer process on the voids formation at the 3C-SiC/Si interface. From our study, the influence of the voids the wafer curvature is highlighted. It has been observed that decreasing the density of these voids, decreases the stress of the 3C-SiC film; consequently, the wafer curvature is reduced.

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Epitaxial Growth of La2Zr2O7 Buffer Layer on Textured Ni5W Substrate by the Nitrate Route

Journal of Inorganic Materials ◽

10.3724/sp.j.1077.2011.00481 ◽

2011 ◽

Vol 26 (5) ◽

pp. 481-485

Author(s):

Yan-Ling CHENG ◽

Hong-Li SUO ◽

Min LIU ◽

Lin MA ◽

Teng ZHANG

Keyword(s):

Epitaxial Growth ◽

Buffer Layer

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Epitaxial growth of ZnO film on Si(1 1 1) with CeO2(1 1 1) as buffer layer

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/45/41/415306 ◽

2012 ◽

Vol 45 (41) ◽

pp. 415306 ◽

Cited By ~ 6

Author(s):

T I Wong ◽

H R Tan ◽

D Sentosa ◽

L M Wong ◽

S J Wang ◽

...

Keyword(s):

Epitaxial Growth ◽

Buffer Layer ◽

Zno Film

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Nitridation of GaN surface for power device application: A first-principles study

2016 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2016.7838552 ◽

2016 ◽

Cited By ~ 4

Author(s):

Zhaofu Zhang ◽

Baikui Li ◽

Xi Tang ◽

Qingkai Qian ◽

Mengyuan Hua ◽

...

Keyword(s):

First Principles ◽

Power Device ◽

Device Application ◽

First Principles Study

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Epitaxial growth of high quality ZnO:Al film on silicon with a thin γ-Al2O3 buffer layer

Journal of Applied Physics ◽

10.1063/1.1556181 ◽

2003 ◽

Vol 93 (7) ◽

pp. 3837-3843 ◽

Cited By ~ 46

Author(s):

Manoj Kumar ◽

R. M. Mehra ◽

A. Wakahara ◽

M. Ishida ◽

A. Yoshida

Keyword(s):

Epitaxial Growth ◽

Buffer Layer ◽

High Quality

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Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.113 ◽

2009 ◽

Vol 615-617 ◽

pp. 113-116 ◽

Cited By ~ 8

Author(s):

Kazutoshi Kojima ◽

Hajime Okumura ◽

Kazuo Arai

Keyword(s):

Surface Morphology ◽

Epitaxial Growth ◽

Epitaxial Layer ◽

Flow Rate ◽

Growth Conditions ◽

Layer Surface ◽

Specular Surface ◽

Homoepitaxial Growth ◽

Angle Difference ◽

The Face

We have carried out detailed investigations on the influence of the growth conditions and the wafer off angle on the surface morphology of low off angle homoepitaxial growth. We found triangular features to be also serious problems on a 4 degree off 4H-SiC Si-face epitaxial layer surface. The control of the C/Si ratio by controlling the SiH4 flow rate is effective in suppressing the triangular features on 4 degree off Si-face homoepitaxial layer. As regards epitaxial growth on a vicinal off-axis substrate, the small off angle difference of a tenth part of a degree has an influence on the surface morphology of the epitaxial layer. This tendency depends on the face polarity and a C-face can be obtained that has a specular surface with a lower vicinal off angle than a Si-face. By controlling this off angle, a specular surface morphology without a bunched step structure could be obtained on a vicinal off angle 4H-SiC Si-face.

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