Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth

2009 ◽  
Vol 615-617 ◽  
pp. 113-116 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Hajime Okumura ◽  
Kazuo Arai
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Flow Rate ◽  
Growth Conditions ◽  
Layer Surface ◽  
Specular Surface ◽  
Homoepitaxial Growth ◽  
Angle Difference ◽  
The Face

We have carried out detailed investigations on the influence of the growth conditions and the wafer off angle on the surface morphology of low off angle homoepitaxial growth. We found triangular features to be also serious problems on a 4 degree off 4H-SiC Si-face epitaxial layer surface. The control of the C/Si ratio by controlling the SiH4 flow rate is effective in suppressing the triangular features on 4 degree off Si-face homoepitaxial layer. As regards epitaxial growth on a vicinal off-axis substrate, the small off angle difference of a tenth part of a degree has an influence on the surface morphology of the epitaxial layer. This tendency depends on the face polarity and a C-face can be obtained that has a specular surface with a lower vicinal off angle than a Si-face. By controlling this off angle, a specular surface morphology without a bunched step structure could be obtained on a vicinal off angle 4H-SiC Si-face.

Improvement of Homoepitaxial Layer Quality Grown on 4H-SiС Si-Face Substrate Lower than 1 Degree Off Angle

2012 ◽  
Vol 717-720 ◽  
pp. 141-144 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Satchiko Ito ◽  
Akiyo Nagata ◽  
Hajime Okumura
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Epitaxial Layer ◽  
Flow Rate ◽  
Growth Process ◽  
High Yield ◽  
Schottky Barrier Diodes ◽  
Specular Surface ◽  
Interfacial Dislocations

In this study, we struck a balance between specular surface morphology and polytype homogeneity on an epitaxial layer grown on 4H-SiC Si-face substrate with off angle less than 1degree by controlling the C/Si ratio with the SiH4 flow rate. Schottky barrier diodes fabricated on a grown epitaxial layer exhibited a blocking of voltage over 1000 V and an n value of less than 1.1 with a high yield of more than 80%. A substrate with a low off angle was found to have an advantage as regareds the stress that generates the interfacial dislocations at the epitaxial layer/substrate interface during the epitaxial growth process.

4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

2010 ◽  
Vol 645-648 ◽  
pp. 99-102 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Sachiko Ito ◽  
Junji Senzaki ◽  
Hajime Okumura
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Growth Conditions ◽  
Step Bunching ◽  
Homoepitaxial Growth ◽  
Blocking Voltage ◽  
Basal Plane Dislocation ◽  
Epilayer Surface

We have carried out detailed investigations of 4H-SiC homoepitaxial growth on vicinal off-angled Si-face substrates. We found that the surface morphology of the substrate just after in-situ H2 etching was also affected by the value of the vicinal-off angle. Growth conditions consisting of a low C/Si ratio and a low growth temperature were effective in suppressing macro step bunching at the grown epilayer surface. We also demonstrated epitaxial growth without step bunching on a 2-inch 4H-SiC Si-face substrate with a vicinal off angle of 0.79o. Ni Schottky barrier diodes fabricated on an as-grown epilayer had a blocking voltage above 1000V and a leakage current of less than 5x10-7A/cm2. We also investigated the propagation of basal plane dislocation from the vicinal off angled substrate into the epitaxial layer.

2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD Method

2005 ◽  
Vol 483-485 ◽  
pp. 93-96 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Hajime Okumura ◽  
Satoshi Kuroda ◽  
Kazuo Arai ◽  
Akihiko Ohi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Spiral Growth ◽  
Layer Surface ◽  
Screw Dislocations ◽  
Specular Surface ◽  
Homoepitaxial Growth ◽  
Cvd Method

Homoepitaxial growth was carried out on 4H-SiC on-axis substrate by horizontal hot wall chemical vapor deposition. By using carbon face substrate, specular surface morphology of a wide area of up to 80% of a 2-inch epitaxial wafer was obtained at a low C/Si ratio growth condition of 0.6. The Micropipe in on-axis substrate was indicated to be filled with spiral growth and to be dissociated into screw dislocations during epitaxial growth. It was found that the appearance of basal plane dislocations on the epitaxial layer surface can be prevented by using an on-axis substrate.

scholarly journals The dependence of surface morphology on the growth temperature of the Pb0.7Sn0.3Te/Si(111) topological insulator thin films

2021 ◽  
Vol 2103 (1) ◽  
pp. 012086
Author(s):  
A K Kaveev ◽  
D N Bondarenko ◽  
O E Tereshchenko
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Topological Insulator ◽  
Growth Temperature ◽  
Lateral Size ◽  
Layer Surface ◽  
Significant Extent ◽  
Average Value

Abstract The possibility of epitaxial growth of Pb0.7Sn0.3Te crystalline topological insulator films on the Si(111) surface was shown and epitaxial relations were found. It was shown that, depending on the growth temperature, it is possible to control not only the character of the morphology, but also, to a significant extent, the smoothness of the epitaxial layer surface, which is extremely important for further transport measurements of the films. Analysis of the grown films surface morphology made it possible to establish the average value of the height and lateral size of the terraces and islands forming Pb0.7Sn0.3Te surface.

Dependence of 4H-SiC Epitaxial Layer Quality on Growth Conditions with Wafer Size Corresponding to 150 mm

2012 ◽  
Vol 1433 ◽  
Author(s):  
Chiaki Kudou ◽  
Kentaro Tamura ◽  
Takashi Aigo ◽  
Wataru Ito ◽  
Johji Nishio ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Carrier Concentration ◽  
Epitaxial Layer ◽  
Radial Direction ◽  
Defect Density ◽  
Growth Conditions ◽  
Thickness Uniformity ◽  
Homoepitaxial Growth ◽  
Major Parameter ◽  
Wafer Size

ABSTRACTHomoepitaxial growth on 4H-SiC Si-face substrates with sizes corresponding to 150 mm was carried out. The influence of growth conditions for uniformity and epitaxial defect density was investigated. A 150 mm size was realized by using two 76.2 mm wafers lined up in a radial direction. C/Si ratio is found to be a major parameter for controlling triangular defect density and the generation of step bunching. As a result, the surface morphology without bunched step structure and the triangular defect density with 0.5 cm−2 were obtained by decreasing C/Si ratio to 1.0 on the size corresponding to 150 mm. Under this condition, good carrier concentration and thickness uniformity of σ/mean =15.2 % and 1.7 % could be obtained.

Homoepitaxial Growth on 4H-SiC (03-38) Face by Sublimation Close Space Technique

2005 ◽  
Vol 483-485 ◽  
pp. 129-132 ◽  
Author(s):  
S. Yoneda ◽  
Tomoaki Furusho ◽  
H. Takagi ◽  
S. Ohta ◽  
Shigehiro Nishino
Keyword(s):  
Epitaxial Growth ◽  
Oxidation Rate ◽  
Growth Conditions ◽  
Optimum Growth ◽  
Specular Surface ◽  
Homoepitaxial Growth ◽  
Space Technique ◽  
Sublimation Method ◽  
The Difference ◽  
Optimum Growth Condition

For preliminary step toward fabrication of MOSFET using 4H-SiC 8) 3 (03 prepared by sublimation method, epitaxial growth of device quality 4H-SiC on 4H-SiC (0001) 8.0° off substrate was carried out and investigated. Smooth and specular surface of 4H-SiC (0001) plane was obtained by optimum growth condition. And epitaxial growth on 4H-SiC 8) 3 (03 and ) 8 3 (03 substrates were carried out with optimum growth conditions of 4H-SiC (0001). Smooth and specular surface was obtained on 4H-SiC 8) 3 (03 and ) 8 3 (03 plane. Growth rate of epilayers of 4H-SiC (0001), 8) 3 (03 and ) 8 3 (03 face were same. Oxidation rate of 4H-SiC (0001), ) 1 (000 , 8) 3 (03 and ) 8 3 (03 face was investigated. The oxidation rate was different depending on the faces. It was observed that the difference of oxidation rate of 8) 3 (03 and ) 8 3 (03 is mainly due to the difference of polarity similar to the case of reported for (0001) and ) 1 (000 .

Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates

2019 ◽  
Vol 954 ◽  
pp. 31-34
Author(s):  
Guo Guo Yan ◽  
Xing Fang Liu ◽  
Feng Zhang ◽  
Zhan Wei Shen ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Epitaxial Layers ◽  
Homoepitaxial Growth ◽  
Influence Mechanism

Homoepitaxial growths of 4H-SiC were performed on Si-face (0001) on-axis substrates in a SiH4-C2H4-H2-HCl system by using our home-made vertical hot wall CVD reactor. The influence mechanism of the growth temperature and C/Si ratio on the morphology and growth rate was studied. It is found that the steps in the epilayer become more clear with the increasing temperatures. The result indicates that the C/Si ratio window of on-axis epitaxial growth is very narrow. Only when the C/Si ratio was 1.2, a slightly improved surface morphology can be achieved. The results indicate that 4H-SiC epitaxial layers were obtained on on-axis substrates and the films were highly-oriented 4H-SiC.

Study of Surface Morphologies of On-Axis 6H-SiC Wafer after High-Temperature Etching and Epitaxial Growth

2014 ◽  
Vol 778-780 ◽  
pp. 197-200
Author(s):  
Xue Chao Liu ◽  
Biao Shi ◽  
Jun Xin ◽  
Wei Huang ◽  
Xi Liu ◽  
...  
Keyword(s):  
High Temperature ◽  
Epitaxial Growth ◽  
Unit Cell ◽  
Lateral Growth ◽  
Layer Surface ◽  
Edge Region ◽  
Homoepitaxial Growth ◽  
Cell Height ◽  
Surface Morphologies ◽  
Sic Wafer

Gas etching and homoepitaxial growth on a nominally on-axis 2-inch 6H-SiC (0001) Si-face were studied. Regular steps with one unit cell height and complex pattern with facets and steps were observed after gas etching in the central region and edge region, respectively. The homoepitaxial growth shows that the complex (facets & steps) pattern expands and merges during the growth to bring on a rough epi-layer surface in the edge region. The steps with one unit cell height on the substrate split into steps with bilayers on the epilayer. The different lateral growth rates of <11-20>- and <1-100>-orientated steps make the width of steps orientated to <11-20> much larger than the ones orientated to <1-100>.

Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD

2006 ◽  
Vol 527-529 ◽  
pp. 219-222 ◽  
Author(s):  
Keiji Wada ◽  
Tsunenobu Kimoto ◽  
Kimito Nishikawa ◽  
Hiroyuki Matsunami
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Smooth Surface ◽  
Doping Concentration ◽  
Growth Conditions ◽  
The Other ◽  
Background Doping ◽  
Site Competition ◽  
Competition Behavior ◽  
Ratio Range

4H-SiC layers have been homoepitaxially grown on 4°off-axis (0001) and (000-1) under various conditions by horizontal hot-wall CVD. We have investigated surface morphology and background doping concentration of the epi-layers on 4°off-axis substrates. Surface morphology grown on the (0001) Si-face showed strong step bunching under C-rich conditions. On the other hand, smooth surface morphology on the (000-1) C-face could be grown in the wide C/Si ratio range at 1600 °C. Site-competition behavior is clearly observed under low-pressure growth conditions on 4°off-axis (000-1) C-face, leading to a lowest doping concentration of 4.4x1014 cm-3.

99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD

2018 ◽  
Vol 924 ◽  
pp. 72-75 ◽  
Author(s):  
Keiji Wada ◽  
Takemi Terao ◽  
Hironori Itoh ◽  
Tsutomu Hori ◽  
Hideyuki Doi ◽  
...  
Keyword(s):  
Temperature Distribution ◽  
Numerical Simulations ◽  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Growth Conditions ◽  
Experimental Results ◽  
Thickness Uniformity ◽  
Free Region ◽  
Controlled Doping

Epitaxial growth of 4H-SiC on 150 mm wafers has been investigated using experimental results and numerical simulations toward the goal of BPDs reduction and doping uniformity control in the epitaxial layer. We have reported analyses of the temperature distribution dependence of the doping uniformity and BPDs propagations on the 3 x 150 mm multi-wafer CVD epitaxial growth. By optimizing epitaxial growth conditions, we have demonstrated an excellent doping and thickness uniformity and a 99.9% BPD free region, simultaneously.

Sign in / Sign up

Export Citation Format

Share Document