LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application

2009 ◽  
Vol 615-617 ◽  
pp. 141-144 ◽  
Author(s):  
Ryo Hattori ◽  
Kazuhito Kamei ◽  
Kazuhiko Kusunoki ◽  
Nobuyoshi Yashiro ◽  
S. Shimosaki
Keyword(s):  
Liquid Phase ◽  
Epitaxial Layer ◽  
Liquid Phase Epitaxy ◽  
Basal Plane ◽  
Power Device ◽  
Device Application ◽  
Basal Plane Dislocation ◽  
Low Nitrogen

LPE (liquid phase epitaxy) growth of low nitrogen unintentionally doped SiC epitaxial layer on on-axis 4H-SiC substrate using nitrogen getter Si based solution was investigated to realize basal plane dislocation (BPD) free epitaxial layer. A significant reduction in BPD was demonstrated.

Starting Point of Step-Bunching Defects on 4H-SiC Si-Face Substrates

2015 ◽  
Vol 821-823 ◽  
pp. 367-370 ◽  
Author(s):  
Kentaro Tamura ◽  
Masayuki Sasaki ◽  
Chiaki Kudou ◽  
Tamotsu Yamashita ◽  
Hideki Sako ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Epitaxial Layer ◽  
Basal Plane ◽  
X Ray ◽  
Step Bunching ◽  
Line Feature ◽  
Starting Point ◽  
Basal Plane Dislocation ◽  
Koh Etching

On 4H-SiC Si-face substrates after H2etching, the defect with “line” feature parallel to a step as “bunched-step line” was observed. Using X-ray topography and KOH etching, we confirmed that the bunched-step line originated from basal plane dislocation (BPD). Use of the substrate with the lowest BPD density will be effective to reduce bunched-step line that would affect oxide layer reliability on an epitaxial layer. However, more detail investigation needs to classify the BPD that would become a starting point of bunched-step line.

Solution Growth of Off-Axis 4H-SiC for Power Device Application

2008 ◽  
Vol 600-603 ◽  
pp. 179-182 ◽  
Author(s):  
Ryo Hattori ◽  
Kazuhiko Kusunoki ◽  
Nobuyuki Yashiro ◽  
Kazuhito Kamei
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
Epitaxial Layer ◽  
Drastic Change ◽  
Solution Growth ◽  
Power Device ◽  
Device Application ◽  
Etch Pit

Solution growth on off-axis 4H-SiC sublimation substrate as a buffer layer for the subsequent CVD epitaxial growth was investigated. Dislocation conversion and propagation from the substrate to the CVD epitaxial layer through the solution grown buffer layer was inspected by molten KOH etch pit observation. Effective dislocation conversion from BPD to TED as an effect of the buffer layer insertion with no drastic change in the total EPD was confirmed.

Influence of growth conditions on basal plane dislocation in 4H-SiC epitaxial layer

2004 ◽  
Vol 271 (1-2) ◽  
pp. 1-7 ◽  
Author(s):  
T. Ohno ◽  
H. Yamaguchi ◽  
S. Kuroda ◽  
K. Kojima ◽  
T. Suzuki ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
Basal Plane ◽  
Growth Conditions ◽  
Basal Plane Dislocation

Expansion of Basal Plane Dislocation in 4H-SiC Epitaxial Layer on A-Plane by Electron Beam Irradiation

2018 ◽  
Vol 924 ◽  
pp. 151-154 ◽  
Author(s):  
Masaki Sudo ◽  
Yukari Ishikawa ◽  
Yong Zhao Yao ◽  
Yoshihiro Sugawara ◽  
Masashi Kato
Keyword(s):  
Electron Beam ◽  
Epitaxial Layer ◽  
Basal Plane ◽  
Electron Beam Irradiation ◽  
Expansion Velocity ◽  
Beam Irradiation ◽  
Electron Hole ◽  
Expansion Behavior ◽  
Electron Hole Pair ◽  
Basal Plane Dislocation

The expansion behavior of basal plane dislocations (BPDs) in a 4H-SiC epitaxial layer on the (110) A-plane under electron beam (EB) (//[110]) irradiation was observed. BPD expanded and formed a single Shockley stacking fault (SSSF) between a partial dislocation (PD) pair. The width of the SSSF was proportional to the EB current. The dependence of the expansion velocity on the irradiation position was observed with a fixed EB spot. It was found that the electron-hole pair migration to the PD and/or SSSF can expand the SSSF. The velocity of SSSF expansion by direct SSSF excitation with an EB was much smaller than that by the preferential excitation of a PD with migrated electron-hole pairs.

Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer

2005 ◽  
Vol 483-485 ◽  
pp. 661-664 ◽  
Author(s):  
Junji Senzaki ◽  
Kazutoshi Kojima ◽  
Tomohisa Kato ◽  
Atsushi Shimozato ◽  
Kenji Fukuda
Keyword(s):  
Epitaxial Layer ◽  
Basal Plane ◽  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Common Cause ◽  
Basal Plane Dislocation ◽  
Sic Wafer

The effects of dislocations in n-type 4H-SiC(0001) epitaxial wafers on the reliability of thermal oxides have been investigated. Charge-to-breakdown (QBD) values of thermal oxides decrease with increase in the dislocations under a gate-oxide area. Nomarski microscope observations show that dielectric breakdown of thermal oxides occurs at the position of dislocation in epitaxial layer. It is reavealed that basal plane dislocation is the most common cause of the dielectric breakdown.

Influence of growth temperature and cooling rate on the growth of Si epitaxial layer by dropping-type liquid phase epitaxy from the pure Si melt

2008 ◽  
Vol 310 (24) ◽  
pp. 5248-5251 ◽  
Author(s):  
Zengmei Wang ◽  
Kentaro Kutsukake ◽  
Hitoshi Kodama ◽  
Noritaka Usami ◽  
Kozo Fujiwara ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Cooling Rate ◽  
Epitaxial Layer ◽  
Liquid Phase Epitaxy ◽  
Growth Temperature

New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor

2019 ◽  
Vol 963 ◽  
pp. 123-126
Author(s):  
Tobias Höchbauer ◽  
Christian Heidorn ◽  
Nikolaos Tsavdaris
Keyword(s):  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Basal Plane ◽  
Growth Process ◽  
High Growth ◽  
High Growth Rate ◽  
Layer Growth ◽  
Structural Defects ◽  
Epitaxial Layers ◽  
Basal Plane Dislocation

The future challenges for SiC device technology are cost reduction and increased reliability. A key point to achieve that is the increase of yield during epitaxial layer growth through the reduction of structural defects (such as basal plane dislocations and triangle defects), an increased thickness and doping uniformity, and a high growth rate. Despite significant advancements in SiC epitaxial growth technology, it still constitutes a big challenge to find the optimum working point at which all those requirements are fulfilled. By implementing a new epitaxial layer growth process, we are able to grow basal plane dislocation free epitaxial layers, while the density of other structural defects remains low. Additionally, intra-wafer thickness and doping uniformities of the epitaxial layers are further improved.

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