Sm1-xNdxNiO3 Thin Films Deposition by KrF Laser Ablation

The perovskites RNiO3 (R rare earth ≠ La) are classified as a phase transition metal-insulator. The transition temperature is modulated by the size of the rare earth. The use of compound R1-xR'xNiO3 can vary transition temperature on a wide thermal range depending on the concentration of the two rare earths. The Sm1-xNdxNiO3 (x = 0.45) thin layers have been carried out on (100) silicon substrates by KrF laser ablation (λ = 248 nm, 25ns) at two different fluences 2 and 3 Jcm-2. The oxygen pressure and the target-substrate distance have been maintained at 0.2 mbar and 4 cm respectively. The deposition temperature has been set at 500 ° C. The obtained layers were characterized by X-ray diffraction, atomic force microscopy and Rutherford back scattering diagnostics. The resistivity Measurements were carried out by the conventional four-probe method. The XRD spectra revealed the presence of an ideal cubic perovskite phase. The RBS analysis showed that the deposited layers are rich in oxygen. A correlation between the morphology properties of the deposited layers and the plasma dynamics studied by fast imaging has been found.

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Impact of Template Layers on Dielectric and Electrical Properties of Pulsed-Laser Ablated Pb(Mg1/3 Nb2/3)O3 - PbTiO3 Thin Films

MRS Proceedings ◽

10.1557/proc-688-c7.28.1 ◽

2001 ◽

Vol 688 ◽

Author(s):

Apurba Laha ◽

S. Saha ◽

S. B. Krupanidhi

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Perovskite Phase ◽

Pulsed Laser ◽

Thin Layers ◽

Silicon Substrates ◽

Si Substrates ◽

Actual Nature ◽

Different Temperatures ◽

Pt Films

AbstractA study was done on pulsed laser deposited relaxor ferroelectric thin films of 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) deposited on platinized silicon substrates with template layers to observe the influence of the template layers on physical and electrical properties. Initial results, showed that perovskite phase (80% by volume) was obtained through proper selection of the processing conditions on Pt/Ti/SiO2/Si substrates. The films were grown at 300°C and then annealed in a rapid thermal annealing furnace in the temperature range of 750-850°C to induce crystallization. Comparison of the films annealed at different temperatures revealed a change in crystallinity, perovskite phase formation and grain size. These results were further used to improve the quality of the perovskite PMN-PT phase by inserting thin layers of TiO2 on the Pt substrate. These resulted in an increase in perovskite phase in the films even at lower annealing temperatures. Dielectric studies on the PMN-PT films show very high values of dielectric constant (1300) at room temperature, which further improved with the insertion of the template seed layer. The relaxor properties of the PMN-PT were correlated with Vogel-Fulcher theory to determine the actual nature of the relaxation process.

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Plasma dynamics in ultra-short laser ablation in electronic materials

International Congress on Applications of Lasers & Electro-Optics ◽

10.2351/1.5059829 ◽

2001 ◽

Author(s):

Taeyoul Choi ◽

David Jen Hwang ◽

Costas P. Grigoropoulos

Keyword(s):

Laser Ablation ◽

Electronic Materials ◽

Plasma Dynamics

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INFRARED PHOTOLUMINESCENCE SPECTRA OF PBS NANOPARTICLES PREPARED BY LANGMUIR–BLODGETT AND LASER ABLATION METHODS

Acta Polytechnica ◽

10.14311/ap.2014.54.0426 ◽

2014 ◽

Vol 54 (6) ◽

pp. 426-429 ◽

Cited By ~ 3

Author(s):

Zdeněk Remes ◽

Tomas Novak ◽

Jiri Stuchlik ◽

The-ha Stuchlikova ◽

Vladislav Dřínek ◽

...

Keyword(s):

Laser Ablation ◽

Spectral Range ◽

Near Infrared ◽

Infrared Region ◽

Thin Layers ◽

Photoluminescence Intensity ◽

Photoluminescence Spectra ◽

Colloidal Solutions ◽

Pbs Nanoparticles ◽

Langmuir Blodgett

We optimized the optical setup originally designed for the photoluminescence measurements in the spectral range 400‒1100 nm. New design extends the spectral range into the near infrared region 900‒1700 nm and allows the colloidal solutions measurements in cuvettes as well as the measurements of nanoparticles deposited in the form of thin films on glass substrates. The infrared photoluminescence spectra of the PbS nanoparticles prepared by the Langmuir–Blodgett technique show the higher photoluminescence intensity and the shift to the shorter wavelengths compared to the infrared photoluminescence spectra of the PbS nanoparticles prepared by the laser ablation from PbS target. We aslo proved the high stability of PbS nanoparticles prepared in the form of thin layers.

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Doping and crystallization of amorphous SiGe films with an excimer (KrF) laser

Journal of Materials Research ◽

10.1557/jmr.1995.1884 ◽

1995 ◽

Vol 10 (8) ◽

pp. 1884-1888 ◽

Cited By ~ 5

Author(s):

S. Krishnan ◽

M.I. Chaudhry ◽

S.V. Babu

Keyword(s):

Silicon Germanium ◽

Room Temperature ◽

Laser Pulses ◽

Laser Exposure ◽

Silicon Substrates ◽

A Value ◽

Crystal Film ◽

Krf Laser ◽

Amorphous Silicon Germanium

Amorphous silicon germanium (a-SiGe) films, deposited on silicon substrates at room temperature in a molecular beam epitaxy system, were transformed into a single-crystal film and doped with phosphorus by exposure to KrF laser pulses. Electron channeling patterns showed that laser exposure resulted in crystallization of the undoped a-SiGe films. The SiGe films were doped by laser irradiation, using a phosphorus spin-on-dopant. The sheet resistance of the doped films decreased with increasing numbers of pulses, reaching a value of about ∼ 5 × 104 ohms/□ after 15 pulses. I-V data from mesa-type n-SiGe/p-Si diode devices were used to determine the effect of laser processing on the quality of the SiGe films.

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Determination of Rare Earth Elements in Rock-Forming Clinopyroxenes Using NexION 300S Mass Spectrometer with NWR 213 Laser Ablation System

Springer Proceedings in Earth and Environmental Sciences - Minerals: Structure, Properties, Methods of Investigation ◽

10.1007/978-3-030-00925-0_41 ◽

2019 ◽

pp. 289-292 ◽

Cited By ~ 1

Author(s):

Maria V. Zaitceva ◽

Sergei Votyakov ◽

Vladimir R. Shmelev

Keyword(s):

Rare Earth ◽

Laser Ablation ◽

Rare Earth Elements ◽

Mass Spectrometer

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Deposition of Epitaxially Oriented Films of Cubic SiC on Silicon by Laser Ablation of Elemental Targets.

MRS Proceedings ◽

10.1557/proc-339-393 ◽

1994 ◽

Vol 339 ◽

Cited By ~ 1

Author(s):

L. Rimai ◽

R. Ager ◽

W. H. Weber ◽

J. Hangas ◽

B. D. Poindexter

Keyword(s):

Silicon Carbide ◽

Laser Ablation ◽

Crystalline Silicon ◽

Epitaxial Films ◽

Ablation Plume ◽

Silicon Substrates ◽

Pure Silicon ◽

Silicon Target ◽

Oriented Films ◽

Pure Carbon

ABSTRACTSilicon carbide films are grown epitaxially on crystalline silicon substrates heated above 1000 °C, by laser ablation of pure carbon targets to thicknesses between 300 and 400 nm. These films grow on top of the silicon substrate from the carbon in the ablation plume and from the silicon of the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 μm with part of the silicon being supplied by the ablation plume of the silicon target.

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Simultaneous determination of Sm–Nd isotopes, trace-element compositions and U–Pb ages of titanite using a laser-ablation split-stream technique with the addition of water vapor

Journal of Analytical Atomic Spectrometry ◽

10.1039/d1ja00246e ◽

2021 ◽

Author(s):

Le Zhang ◽

Jia-Lin Wu ◽

Yanqiang Zhang ◽

Ya-Nan Yang ◽

Pengli He ◽

...

Keyword(s):

Rare Earth ◽

Water Vapor ◽

Laser Ablation ◽

Rare Earth Elements ◽

Trace Element ◽

Simultaneous Determination ◽

Nd Isotopes ◽

Trace Element Contents

Titanite is a widespread accessory nesosilicate with high trace-element contents including rare-earth elements, Th, and U, and is thus suitable for in situ isotopic and trace-element analyses and U–Pb dating....

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Approach II: Highly-Sensitive Open-Cell Laser Ablation-Inductively Coupled Plasma Mass Spectrometry (LA-ICPMS) Approaches for the Quantification of Rare Earth Elements in Natural Carbonates at Parts-Per-Billion Levels

10.1007/978-981-16-3619-6_4 ◽

2021 ◽

pp. 31-47

Author(s):

Chung-Che Wu

Keyword(s):

Mass Spectrometry ◽

Rare Earth ◽

Laser Ablation ◽

Rare Earth Elements ◽

Inductively Coupled Plasma ◽

Open Cell ◽

Inductively Coupled ◽

Highly Sensitive ◽

Plasma Mass Spectrometry

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Effects of Zr/Ti Ratio on the Structure and Ferroelectric Properties in PZT-PZN-PMN Ceramics near the Morphotropic Phase Boundary

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.55-57.125 ◽

2008 ◽

Vol 55-57 ◽

pp. 125-128 ◽

Cited By ~ 1

Author(s):

R. Muanghlua ◽

S. Niemchareon ◽

Wanwilai C. Vittayakorn ◽

Naratip Vittayakorn

Keyword(s):

Transition Temperature ◽

Phase Boundary ◽

Coercive Field ◽

Phase Structure ◽

Remanent Polarization ◽

Perovskite Phase ◽

Ferroelectric Properties ◽

Piezoelectric Ceramics ◽

Pure Perovskite Phase ◽

All Ceramic

The piezoelectric ceramics of Pb(ZrxTi1−x)O3 – Pb(Zn1/3Nb2/3)O3 – Pb(Mn1/3Nb2/3)O3; PZT-PZN-PMN with Zr/Ti ratios of 48/52, 50/50 and 52/48 were fabricated in order to investigate the effect of compositional modifications on the ferroelectric properties of PZT-PZN-PMN ceramics. The phase structure of ceramics sintered at 1,150°C was analyzed. Results show that the pure perovskite phase was in all ceramic specimens, and the phase structure of PZT-PZN-PMN piezoelectric ceramics transformed from tetragonal to rhombohedral, with the Zr/Ti ratios increased in the system. The PZT-PZN-PMN ceramics with a Zr/Ti ratio of 50/50 exhibited the most promising properties including high remanent polarization and low coercive field of 25.95 µC cm−2 and 12.5 kV cm−1, respectively. Furthermore, the transition temperature decreased when the Zr/Ti ratio increased in the system.

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