High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate

2009 ◽  
Vol 615-617 ◽  
pp. 971-974 ◽  
Author(s):  
Young Hwan Choi ◽  
Ji Yong Lim ◽  
Kyu Heon Cho ◽  
Young Shil Kim ◽  
Min Koo Han
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
Depletion Region ◽  
Wet Etching ◽  
Electrical Characteristics ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Field Plate ◽  
Gan Hemts ◽  
Gate Edge

AlGaN/GaN HEMTs employing a tapered field plate, which decreases the gate leakage current and improves the breakdown voltage without any sacrifice of the forward electrical characteristics were proposed and fabricated. The tapered structure was fabricated by the wet etching process. The depletion region of the proposed structure expands toward the slope of the tapered field plate and the electric field concentration at the gate edge can be successfully suppressed. The gate leakage current of proposed device at VGS= -5 V and VDS= 100 V was decreased by 2-3 orders compared with that of the conventional one. The breakdown voltage of proposed device was 880 V while that of conventional one was 548 V.

Effect of SiN:H x passivation layer on the reverse gate leakage current in GaN HEMTs

2018 ◽  
Vol 27 (9) ◽  
pp. 097309 ◽  
Author(s):  
Sheng Zhang ◽  
Ke Wei ◽  
Yang Xiao ◽  
Xiao-Hua Ma ◽  
Yi-Chuan Zhang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Passivation Layer ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts

Reduced reverse gate leakage current for GaN HEMTs with 3 nm Al/40 nm SiN passivation layer

2019 ◽  
Vol 114 (1) ◽  
pp. 013503 ◽  
Author(s):  
Sheng Zhang ◽  
Ke Wei ◽  
Xiao-Hua Ma ◽  
Bin Hou ◽  
Guo-Guo Liu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Passivation Layer ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts

Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched InAlN/GaN HEMTs

2015 ◽  
Vol 36 (12) ◽  
pp. 1281-1283 ◽  
Author(s):  
Dawei Yan ◽  
Jian Ren ◽  
Guofeng Yang ◽  
Shaoqing Xiao ◽  
Xiaofeng Gu ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemts ◽  
Lattice Matched

Effect of post deposition annealing and post metallization annealing on electrical and structural characteristics of Pd/Al2O3/6H-SiC MIS capacitors

2018 ◽  
Vol 35 (2) ◽  
pp. 65-73 ◽  
Author(s):  
Papanasam E. ◽  
Binsu J. Kailath
Keyword(s):  
Electric Field ◽  
Leakage Current ◽  
Rapid Thermal Annealing ◽  
Electrical Characteristics ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Content Type ◽  
X Ray ◽  
Deposited Film ◽  
Post Deposition

Purpose Al2O3 used as gate dielectric enables exploitation of higher electric field capacity of SiC, improving capacitive coupling and memory retention in flash memories. Passivation of traps at interface and in bulk which causes serious threat is necessary for better performance. The purpose of this paper is to investigate the effect of post-deposition rapid thermal annealing (PDA) and post-metallization annealing (PMA) on the structural and electrical characteristics of Pd/Al2O3/6H-SiC capacitors. Design/methodology/approach Al2O3 film is deposited by ALD; PDA is performed by rapid thermal annealing (RTA) in N2 at 900°C for 1 min and PMA in forming gas for 10 and 40 min. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) measurements data are studied in addition to capacitance-voltage (C-V) and current-voltage (I-V) characteristics for the fabricated Pd/Al2O3/SiC capacitors. Conduction mechanism contributing to the gate leakage current is extracted for the entire range of gate electric field. Findings RTA forms aluminum silicide at the interface causing an increase in the density of the interface states and gate leakage current for devices with an annealed film, when compared with an as-deposited film. One order improvement in leakage current has been observed for the devices with RTA, after subjecting to PMA for 40 min, compared with those devices for which PMA was carried out for 10 min. Whereas, no improvement in leakage current has been observed for the devices on as-deposited film, even after subjecting to PMA for 40 min. Conduction mechanisms contributing to gate leakage current are extracted for the investigated Al2O3/SiC capacitors and are found to be trapfilled limit process at low-field regions; trapassisted tunneling in the mid-field regions and Fowler–Nordheim (FN) tunneling are dominating in high-field regions. Originality/value The effect of PDA and PMA on the structural and electrical characteristics of Pd/Al2O3/SiC capacitors suitable for flash memory applications is investigated in this paper.

Influence of Surface Defect Charge at AlGaN–GaN-HEMT Upon Schottky Gate Leakage Current and Breakdown Voltage

2005 ◽  
Vol 52 (2) ◽  
pp. 159-164 ◽  
Author(s):  
W. Saito ◽  
M. Kuraguchi ◽  
Y. Takada ◽  
K. Tsuda ◽  
I. Omura ◽  
...  
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
Surface Defect ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gan Hemt

scholarly journals Design of Hybrid Schottky-Ohmic Gate in Normally-Off p-GaN Gate AlGaN/GaN HEMTs

2021 ◽  
Author(s):  
Wen-Shiuan Tsai ◽  
Zhen-Wei Qin ◽  
Yue-ming Hsin
Keyword(s):  
Leakage Current ◽  
Drain Current ◽  
Contact Length ◽  
Optimal Performance ◽  
Hole Injection ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Gate Structure ◽  
Left And Right ◽  
Gan Hemts

Abstract This study proposes three hybrid Schottky-ohmic gate structures for normally-off p-GaN gate AlGaN/GaN HEMTs. One has a Schottky-gate cover on the ohmic-gate and has part of the area contact to the p-GaN surface at the left and right sides of ohmic-gate (Structure A). The two others only have the Schottky-gate contact to the p-GaN surface at the left side (Structure B) or right side (Structure C) of the ohmic-gate. Different gate metal designs change the hole injection from p-GaN to GaN channel and show various gate leakages. The optimized contact length of Schottky-gate can suppress on-state gate leakage current over two orders of magnitude compared to conventional ohmic p-GaN gate HEMT. The improved on-state maximum drain current is over 60 mA/mm compared to Schottky p-GaN gate HEMT. Optimal performance in Structure B with Schottky-gate contact length ranges from 0.8 to 1.8 μm in a 2 μm gate geometry.

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