Effect of RF Power on the Properties of Magnetron Sputtered ZnO:Al Thin Films Deposited at Room Temperature

2010 ◽  
Vol 636-637 ◽  
pp. 991-995 ◽  
Author(s):  
Mabrouk Selmi ◽  
F. Chaabouni ◽  
Mohamed Abaab ◽  
Bahri Rezig
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Antireflective Coatings ◽  
Rf Power ◽  
Si Substrates ◽  
Visible Wavelength Range ◽  
Aluminum Doped Zinc Oxide ◽  
Optical Applications

RF magnetron sputtering is used to deposit Aluminum-doped zinc oxide (ZnO:Al) films on glass and p-Si substrates. This work is a study of ZnO:Al films grown at different RF powers for photovoltaic cells application, as antireflective (AR) coatings. At room temperature and argon gas pressure of 0.6 Pa, RF power was changed from 200 to 400 W. The structural, electrical and optical properties of ZnO:Al films were investigated. Under theses conditions, we have obtained c axis-oriented wurtzite structure ZnO thin films with high transmission (>85%) and low reflection in visible wavelength range and a band gap of 3.34 eV. The results of this study suggest that the variation of the RF power, used for growth, allows the control of the structural and optical properties of the films. ZnO:Al films can be used in optical applications as thin films antireflective coatings.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

Sensitivity of ZnO Based NH3 Sensor by RF Magnetron Sputtering

2012 ◽  
Vol 626 ◽  
pp. 168-172
Author(s):  
Samsiah Ahmad ◽  
Nor Diyana Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Structural Properties ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Rf Power ◽  
Si Substrates

Zinc Oxide (ZnO) thin films were deposited onto SiO2/Si substrates using radio frequency (RF) magnetron sputtering method as an Ammonia (NH3) sensor. The dependence of RF power (50~300 Watt) on the structural properties and sensitivity of NH3sensor were investigated. XRD analysis shows that regardless of the RF power, all samples display the preferred orientation on the (002) plane. The results show that the ZnO deposited at 200 Watt display the highest sensitivity value which is 44%.

Investigation of Nanostructure and Optical Properties of Flexible AZO Thin Films at Different Powers of RF Magnetron Sputtering

NANO ◽  
2018 ◽  
Vol 13 (06) ◽  
pp. 1850062 ◽  
Author(s):  
Sh. Khatami ◽  
L. Fekri Aval ◽  
G. Behzadi Pour
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Light Emitting ◽  
Structure Morphology ◽  
Xrd Patterns ◽  
Predominant Direction

In this study Al-doped Zinc Oxide (AZO) thin films were successfully deposited on the flexible Polymethyl methacrylate (PMMA) substrate by RF magnetron sputtering. The effects of RF power on the crystal structure, morphology, thickness and optical properties of AZO thin films have been investigated. The AZO thin films were analyzed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), DEKTAK 3 profilometer, UV–Visible spectroscopy and room temperature photoluminescence (PL) spectroscopy. The XRD patterns show that increase of RF power leads to increase in the predominant direction along (100) and crystal plane of hexagonal ZnO. Moreover, the transmittance of thin films decreased from 76% to 61% and optical bang gap varied among 3.34[Formula: see text]eV to 3.22[Formula: see text]eV with increasing RF power. The PL spectra show excellent light-emitting characteristics: 375[Formula: see text]nm, 428[Formula: see text]nm, 467[Formula: see text]nm and 505[Formula: see text]nm. The results indicate that the peak intensity increases with increasing RF power from 80[Formula: see text]W to 180[Formula: see text]W.

Electrical and Optical Properties of ZnO-Doped Zr0.8Sn0.2TiO4 Thin Films on ITO/Glass Substrates by RF Magnetron Sputtering

2011 ◽  
Vol 687 ◽  
pp. 70-74
Author(s):  
Cheng Hsing Hsu ◽  
His Wen Yang ◽  
Jenn Sen Lin
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Ito Glass

Electrical and optical properties of 1wt% ZnO-doped (Zr0.8Sn0.2)TiO4thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different rf power and substrate temperature were investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the deposition conditions, such as rf power and substrate temperature. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. Optical transmittance spectroscopy further revealed high transparency (over 60%) in the visible region of the spectrum.

Comparison of the optical properties of undoped and Ga-doped ZnO thin films deposited using RF magnetron sputtering at room temperature

2008 ◽  
Vol 281 (8) ◽  
pp. 2120-2125 ◽  
Author(s):  
Do-Hyun Kim ◽  
Hoonha Jeon ◽  
Geumchae Kim ◽  
Suejeong Hwangboe ◽  
Ved Prakash Verma ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Doped Zno

(200)-predominant Growth of Radio-frequency Sputtered SrBi2Ta2O9 Thin Films

2002 ◽  
Vol 17 (6) ◽  
pp. 1455-1462 ◽  
Author(s):  
Si-Hyung Lee ◽  
Jeon-Kook Lee ◽  
Ki Hyun Yoon
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Stoichiometric Composition ◽  
Secondary Phase ◽  
Rf Magnetron Sputtering ◽  
Migration Energy ◽  
Rf Power ◽  
Si Substrates ◽  
Higher Power ◽  
Sputtering Pressure

SrBi2Ta2O9 (SBT) thin films were prepared by the radio-frequency (rf ) magnetron sputtering method on Pt/Ti/SiO2/Si substrates. The composition and orientation of SBT thin films were changed by the control of sputtering parameters such as pressure and rf power. As the sputtering pressure increased from 2.5 to 300 mtorr, the film was changed from Sr- and Bi-deficient SBT film to stoichiometric film. The SBT thin films with stoichiometric composition showed good electrical properties. As the rf power increased from 25 to 40 W, the Sr content decreased. However, the Bi content was maximized in the power of 30 W, where the (200)-predominant SBT thin films were fabricated. In lower power of 25 W, typical polycrystalline SBT films were obtained. The Sr and Bi contents in both films were not deficient. However, at the higher power of 35 and 40 W, the secondary phase appeared due to the Sr deficiency. The Bi content of (200)-predominant SBT film was higher than that of polycrystalline films. The degree of the (200) orientation depended on the magnitude of excess Bi content. It is also suggested that the (200)-predominant SBT films were formed by the decomposition of SBT phase to the Bi and Sr atoms caused by rf power control and the lower atomic migration energy along the a axis.

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