Effects of Stacking Faults on High Temperature Creep Behavior in Mg-Y-Zn Based Alloys

2010 ◽  
Vol 638-642 ◽  
pp. 1602-1607 ◽  
Author(s):  
Mayumi Suzuki ◽  
Kouichi Maruyama
Keyword(s):  
Activation Energy ◽  
Creep Behavior ◽  
Stacking Faults ◽  
Dislocation Motion ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Ternary Alloys ◽  
Solute Content ◽  
Planar Defects ◽  
Multiple Addition

Compressive creep behavior of hot-rolled (40%) Mg-Y and Mg-Y-Zn alloys are investigated at 480 ~ 650 K. Creep strength is substantially improved by the simultaneous addition of yttrium and zinc. The minimum creep rate of Mg-0.9mol%Y-0.04mol%Zn (WZ301) alloy decreases to 1/10 lower than that of Mg-1.1mol%Y (W4) alloy at 650 K. Activation energy for creep in W4 and WZ301 alloys are more than 200 kJ/mol at the temperature range of 480 ~ 550 K. These values are higher than the activation energy for self-diffusion coefficient in magnesium (135 kJ/mol). Many stacking faults (planar defects, PDs) are only observed on the basal planes of the matrix in Mg-Y-Zn ternary alloys. Stacking fault energy is considered to decrease by the multiple-addition of yttrium and zinc. The size and density of these planar defects depend on solute content, aging condition. TEM observation has been revealed that the decreasing of the stacking fault energy affects the distribution of dislocations during creep. Many a-dislocations on basal planes are extended significantly. Dislocation motion is restricted significantly by both of these two types of stacking faults (planar type and extended dislocations).

High Temperature Creep Behavior and Effects of Stacking Fault Energy in Mg-Y and Mg-Y-Zn Dilute Solid Solution Alloys

2014 ◽  
Vol 783-786 ◽  
pp. 491-496
Author(s):  
Mayumi Suzuki ◽  
Yasuyuki Murata ◽  
Kyosuke Yoshimi
Keyword(s):  
Activation Energy ◽  
Solid Solution ◽  
Creep Behavior ◽  
Ternary Alloys ◽  
Dislocation Creep ◽  
Prismatic Slip ◽  
Dislocation Slip ◽  
Self Diffusion ◽  
Controlling Mechanism ◽  
Hot Rolled

Compressive creep behavior of hot-rolled (40%) Mg-Y binary and Mg-Y-Zn ternary dilute solid solution alloys are investigated in this study. Creep strength is substantially improved by the addition of zinc. Activation Energy for creep in Mg-Y and Mg-Y-Zn alloys are around 200 kJ/mol at the temperature range from 480 to 570 K. These values are higher than the activation energy for self-diffusion coefficient in magnesium (135 kJ/mol). Many stacking faults, which are planar type defects are observed on the basal planes of the magnesium matrix in Mg-Y-Zn ternary alloys. TEM observation has been revealed that the non-basal a-dislocation slip is significantly activated by these alloys. The rate controlling mechanism of Mg-Y and Mg-Y-Zn dilute alloys are considered to the cross-slip or prismatic-slip controlled dislocation creep with high activation energy for creep, more than 1.5 times higher than the activation energy for creep controlled dislocation climb.

Dislocations and stacking faults in stainless steel

1957 ◽  
Vol 240 (1223) ◽  
pp. 524-538 ◽  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stainless Steel ◽  
Grain Boundaries ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Thin Sections ◽  
Partial Dislocations ◽  
Transmission Electron

Further experiments by transmission electron microscopy on thin sections of stainless steel deformed by small amounts have enabled extended dislocations to be observed directly. The arrangement and motion of whole and partial dislocations have been followed in detail. Many of the dislocations are found to have piled up against grain boundaries. Other observations include the formation of wide stacking faults, the interaction of dislocations with twin boundaries, and the formation of dislocations at thin edges of the foils. An estimate is made of the stacking-fault energy from a consideration of the stresses present, and the properties of the dislocations are found to be in agreement with those expected from a metal of low stacking-fault energy.

The Compression Creep Behavior of Ni3Al-X Single Crystals

1990 ◽  
Vol 213 ◽  
Author(s):  
Seiji Miura ◽  
Tohru Hayashi ◽  
Mitsuhiro Takekawa ◽  
Yoshinao Mishima ◽  
Tomoo Suzuki
Keyword(s):  
Activation Energy ◽  
Single Crystals ◽  
Power Law ◽  
Creep Behavior ◽  
Creep Resistance ◽  
Constant Strain Rate ◽  
State Equation ◽  
Ternary Alloys ◽  
Plastic Behavior ◽  
Compression Tests

ABSTRACTCompressive creep behavior is investigated in ternary Ni3Al single crystals containing Ti, Si, Hf and Cr with stress axes parallel to the crystallographic orientation near [001]. Then a comparison is made with the results of high temperature compression tests under a constant strain rate for the same orientation where plastic behavior is characterized by a distinct yield drop followed by steadystate deformation. It is found that the deformation mechanism for the two cases is identical, namely octahedral viscous flow being expressed by the state equation of the power-law type with a stress exponent of about 3 to 4. The effect of offstoichiometry on the creep resistance is then examined in Ni3(Al,5 at%Ti) alloys with different Ni concentrations. The results support the observation in the polycrystalline compound where the creep resistance increases with Ni concentration on both sides of stoichiometry exhibiting a discontinuity at stoichiometry. Finally, the apparent activation energy in the power-law type state equation for the steady state creep deformation is estimated for all the ternary alloys examined. They are in general in good agreement with that for diffusion of ternary elements in Ni3Al. However, the relative magnitude of the value can not simply be compared since the activation energy depends on deviations from stoichiometry.

Residual Deformation Twin Structure in Planar Shock-Loaded Inconel 600

1969 ◽  
Vol 27 ◽  
pp. 194-195 ◽  
Author(s):  
L. E. Murr ◽  
J. V. Foltz
Keyword(s):  
Deformation Twin ◽  
Stacking Faults ◽  
Residual Deformation ◽  
Dislocation Motion ◽  
Twin Structure ◽  
Planar Defects ◽  
Inconel 600 ◽  
Deformation Twins ◽  
Planar Shock ◽  
The Matrix

Following the initial observations of twins in explosively shock-loaded nickel by Nolder and Thomas, numerous occurrences of deformation twins in shock-loaded metals and alloys of low stacking-fault energy (<40 ergs/cm2) have been observed to contribute in a significant manner to their residual mechanical properties. In many cases, the microtwin structures have exhibited pronounced deviations from pronounced twin compositions, suggesting in most instances that the planar defects were in fact composed of a combination of HCP phase bundles, stacking faults, and twins. The strengthening afforded by these planar twin-faults has been attributed mainly to the, locking of dislocations within their small volumes; and their ability to effectively block dislocation motion in the matrix.

Stacking Faults in Crystals

1968 ◽  
Vol 26 ◽  
pp. 250-251
Author(s):  
P. C. J. Gallagher
Keyword(s):  
Stacking Faults ◽  
Elastic Equilibrium ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Major Influence ◽  
Face Centered Cubic ◽  
Degree Of Dissociation ◽  
Partial Dislocations ◽  
Layer Structures ◽  
Face Centered

Stacking faults are an important substructural feature of many materials, and have been widely studied in layer structures (e.g. talc) and in crystals with hexagonal and face centered cubic structure. Particular emphasis has been placed on the study of faulted defects in f.c.c. alloys, since the width of the band of fault between dissociated partial dislocations has a major influence on mechanical properties.Under conditions of elastic equilibrium the degree of dissociation reflects the balance of the repulsive force between the partials bounding the fault, and the attractive force associated with the need to minimize the energy arising from the misfits in stacking sequence. Examples of two of the faulted defects which can be used to determine this stacking fault energy, Υ, are shown in Fig. 1. Intrinsically faulted extended nodes (as at A) have been widely used to determine Υ, and examples will be shown in several Cu and Ag base alloys of differing stacking fault energy. The defect at B contains both extrinsic and intrinsic faulting, and readily enables determination of both extrinsic and intrinsic fault energies.

Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging

2014 ◽  
Vol 778-780 ◽  
pp. 342-345 ◽  
Author(s):  
Kazuya Konishi ◽  
Shigehisa Yamamoto ◽  
Shuhei Nakata ◽  
Yoshihiko Toyoda ◽  
Satoshi Yamakawa
Keyword(s):  
Activation Energy ◽  
Current Density ◽  
Driving Force ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Experimental Results ◽  
Junction Temperature ◽  
Temperature Levels

We evaluate the velocity of stacking faults (SFs) expansion under various current and temperature levels on the pn diodes by electroluminescence (EL) observation in situ. The driving force of the SFs expansion is analyzed on the basis of the experimental results. The velocity of the SFs expansion increases in proportional to the current density at the every junction temperature levels. The activation energy for the velocity of the SFs expansion is estimated.

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