Electrical Properties of Hydrogen Terminated P-Type Diamond Film
2010 ◽
Vol 663-665
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pp. 625-628
Keyword(s):
P Type
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Undoped high quality polycrystalline diamond films were grown by the microwave plasma chemical vapor deposition (MPCVD) method. The effects of hydrogen plasma treatment and vacuum annealing process on the p-type behavior of diamond films were investigated by the Hall effect method. The sheet carrier concentration increased and the sheet resistivity decreased with the treating time of hydrogen plasma and a stable value was achieved finally. After annealing the samples in vacuum at temperature above 600 °C, the sheet carrier concentration dropped dramatically. The origin of this hydrogen terminated p-type conductive layers is also discussed.
2001 ◽
Vol 10
(12)
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pp. 2118-2124
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2002 ◽
Vol 11
(12)
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pp. 1897-1904
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2006 ◽
Vol 60
(19)
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pp. 2390-2394
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2015 ◽
pp. 38-45
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1999 ◽
Vol 59
(2)
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pp. 143-148
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1992 ◽
Vol 212
(1-2)
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pp. 140-149
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