Preparation, Characterization and Nox Sensing Characteristics of Sensor Grade CuInO2 Thin Films

2012 ◽  
Vol 710 ◽  
pp. 727-732
Author(s):  
E. Prabhu ◽  
K.I. Gnanasekar ◽  
V. Jayaraman ◽  
T. Gnanasekaran
Keyword(s):  
Thin Film ◽  
Gas Sensing ◽  
Operating Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Parameters ◽  
Type Semiconductor ◽  
P Type ◽  
Sensing Characteristics ◽  
Film Form

CuInO2phase, a p-type semi-conducting oxide was successfully stabilized in thin film form by pulsed laser deposition technique and the deposition parameters were optimized. The gas sensing studies carried out on thin film of CuInO2for different concentrations of NOxexhibited a decrease in resistance, a characteristic of p-type semiconductor. The thin film responded to 4 vppm of NOxin air. The CuInO2thin film did not respond to trace levels of hydrogen, ammonia and petroleum gas at this operating temperature and thus offering selectivity to NOx.

scholarly journals Deposition pressure-induced microstructure control and plasmonic property tuning in hybrid ZnO-AgxAu1-x thin films

2021 ◽  
Author(s):  
Robynne Lynne PALDI ◽  
Xing Sun ◽  
Xin Li Phuah ◽  
Juanjuan Lu ◽  
Xinghang Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Method ◽  
Hybrid Films ◽  
Deposition Pressure ◽  
Plasmonic Metamaterials ◽  
Film Form

Self-assembled oxide-metallic alloyed nanopillars as hybrid plasmonic metamaterials (e.g., ZnO-AgxAu1-x) in a thin film form are grown using a pulsed laser deposition method. The hybrid films were demonstrated to be...

The blue luminescence of p-type NiO nanostructured material induced by defects: H2S gas sensing characteristics at a relatively low operating temperature

2020 ◽  
Vol 525 ◽  
pp. 146002 ◽  
Author(s):  
Teboho P. Mokoena ◽  
Zamaswazi P. Tshabalala ◽  
Kenneth T. Hillie ◽  
Hendrik C. Swart ◽  
David E. Motaung
Keyword(s):  
Gas Sensing ◽  
Operating Temperature ◽  
Nanostructured Material ◽  
Blue Luminescence ◽  
P Type ◽  
Sensing Characteristics

Highly sensitive and selective room-temperature NO2 gas-sensing characteristics of SnOX-based p-type thin-film transistor

2019 ◽  
Vol 288 ◽  
pp. 625-633 ◽  
Author(s):  
Hwan-Seok Jeong ◽  
Min-Jae Park ◽  
Soo-Hun Kwon ◽  
Hyo-Jun Joo ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Gas Sensing ◽  
Thin Film Transistor ◽  
Highly Sensitive ◽  
P Type ◽  
Sensing Characteristics

Preparation and Electrical Property of Mg2Si Thin Film by Pulsed Laser Deposition

2014 ◽  
Vol 1058 ◽  
pp. 244-247 ◽  
Author(s):  
Mei Jun Yang
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Film Formation ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Force Microscopy ◽  
Temperature Range ◽  
Type Semiconductor ◽  
Annealing Procedure ◽  
Si Thin Film

Mg2Si thin film on Si(100) substrate was obtained by pulsed laser deposition. Effects of the annealing procedure on the growth of Mg2Si film were discussed. X-ray, atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM) were applied for the phase and microstructure of the obtained Mg2Si film. The results revealed that the annealing procedure was very important for the crystallization of Mg2Si thin film. The Ar partial pressure of 10Pa, temperature of 500°C and time of 30min for annealing were the optimal annealing parameters for Mg2Si thin film formation. Furthermore, electrical properties of the obtained Mg2Si thin film were detected. The results showed that the maximal resistivity of Mg2Si thin film was 7Ω·cm within the temperature range of 110~230°C. And the resistivity gradually decreased with the increase of temperature, which was the characteristic behaviour of a semiconductor. Carrier concentration of the film was negative in the temperature range of testing, showing Mg2Si thin film as n-type semiconductor.

P-type amorphous vanadium oxide thin film fabricated by pulsed laser deposition

2020 ◽  
Vol 59 (7) ◽  
pp. 078004
Author(s):  
Subaru Nakanishi ◽  
Yoshiharu Shinozaki ◽  
Satoru Kaneko ◽  
Akifumi Matsuda ◽  
Mamoru Yoshimoto
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Vanadium Oxide Thin Film ◽  
P Type

Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices

2006 ◽  
Vol 514-516 ◽  
pp. 3-7 ◽  
Author(s):  
Elvira Fortunato ◽  
Alexandra Gonçalves ◽  
António Marques ◽  
Ana Pimentel ◽  
Pedro Barquinha ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Rf Magnetron Sputtering ◽  
Transparent Electrode ◽  
Oxide Semiconductors ◽  
Undoped Material ◽  
Deposition Parameters ◽  
Type Semiconductor ◽  
P Type ◽  
Position Sensitive Detectors

In this paper we report some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide (ZnO), produced by rf magnetron sputtering at room temperature with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer our experience in producing n-type doping ZnO as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detectors while the undoped ZnO can be used as UV photodetector or ozone gas sensor or even as active layer of fully transparent thin film transistors.

β-FeSi2 thin-films grown by a pulsed laser deposition

2000 ◽  
Vol 648 ◽  
Author(s):  
Shin-ichiro Uekusa ◽  
Yasuharu Watanabe ◽  
Yasuhiro Aida ◽  
Noboru Miura
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Band Gap Energy ◽  
Laser Deposition ◽  
Carrier Distribution ◽  
Van Der Pauw ◽  
P Type

AbstractOrthorhombic β-FeSi2 thin-films were prepared on Si(100) and Si(111) substrates by a pulsed laser deposition method. When the substrate temperature was 500°C, β-FeSi2 thin-films were grown on Si(100) and Si(111) substrates. The thin-films grown on Si(100) and Si(111) substrates were polycrystalline and monocrystalline structures, respectively. The values of band-gap energy calculated from transmittance measurements were 0.71-0.72 eV. From Raman scattering measurements, it was found that the distortion due to the lattice mismatch between a β-FeSi2 thin-film and a Si substrate originates in the β-FeSi2/n-Si interface. Moreover, the fine crystals of β-FeSi2 existed in an amorphous thin-film which was grown on Si(111) substrate at room temperature (RT).From van der Pauw measurements, conduction type, carrier concentration and Hall mobility were p-type, 1018-1021 cm−3 and 200-500 cm2/Vsec, respectively. The p-n diode characteristics of these heterostructure diodes were investigated by I-V and C-V measurements. The results indicate that the carrier distribution agrees with an ideal one-sided slope junction.

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