Multifunctional Thin Film Zinc Oxide Semiconductors: Application to Electronic Devices

2006 ◽  
Vol 514-516 ◽  
pp. 3-7 ◽  
Author(s):  
Elvira Fortunato ◽  
Alexandra Gonçalves ◽  
António Marques ◽  
Ana Pimentel ◽  
Pedro Barquinha ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Rf Magnetron Sputtering ◽  
Transparent Electrode ◽  
Oxide Semiconductors ◽  
Undoped Material ◽  
Deposition Parameters ◽  
Type Semiconductor ◽  
P Type ◽  
Position Sensitive Detectors

In this paper we report some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide (ZnO), produced by rf magnetron sputtering at room temperature with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer our experience in producing n-type doping ZnO as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detectors while the undoped ZnO can be used as UV photodetector or ozone gas sensor or even as active layer of fully transparent thin film transistors.

Preparation, Characterization and Nox Sensing Characteristics of Sensor Grade CuInO2 Thin Films

2012 ◽  
Vol 710 ◽  
pp. 727-732
Author(s):  
E. Prabhu ◽  
K.I. Gnanasekar ◽  
V. Jayaraman ◽  
T. Gnanasekaran
Keyword(s):  
Thin Film ◽  
Gas Sensing ◽  
Operating Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Parameters ◽  
Type Semiconductor ◽  
P Type ◽  
Sensing Characteristics ◽  
Film Form

CuInO2phase, a p-type semi-conducting oxide was successfully stabilized in thin film form by pulsed laser deposition technique and the deposition parameters were optimized. The gas sensing studies carried out on thin film of CuInO2for different concentrations of NOxexhibited a decrease in resistance, a characteristic of p-type semiconductor. The thin film responded to 4 vppm of NOxin air. The CuInO2thin film did not respond to trace levels of hydrogen, ammonia and petroleum gas at this operating temperature and thus offering selectivity to NOx.

Pulsed DC Bias Effects on p-Type Semiconductor SrCu2O2 Film Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 13 (5) ◽  
pp. 3341-3345
Author(s):  
Hye-Won Seok ◽  
Sei-Ki Kim ◽  
Hyun-Seok Lee ◽  
Mi-Jae Lee ◽  
Byeong-Kwon Ju
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Pulsed Dc ◽  
Type Semiconductor ◽  
Dc Bias ◽  
P Type

Conductivity of Yittria-Stabilized Zirconia Nanostructure Electrolyte for Solid Oxide Fuel Cell Application by Using RF Magnetron Sputtering

2017 ◽  
Vol 268 ◽  
pp. 352-357
Author(s):  
S.Y. Jaffar ◽  
Yussof Wahab ◽  
Rosnita Muhammad ◽  
Z. Othaman ◽  
Zuhairi Ibrahim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Stabilized Zirconia ◽  
Deposition Parameter ◽  
Deposition Parameters ◽  
Ysz Thin Film ◽  
Temperature Rate ◽  
Lower Temperature

Yttria-stabilized zirconia (YSZ) thin films were deposited successfully using RF magnetron sputtering. The substrate had been used are sapphire glass. A pure ceramic of Zr-Y is synthesized and processed into a planar magnetron target which is reactively sputtered with an Argon-Oxygen gas mixture to form Zr-Y-O nanostructure. The aim of this research is to study the conductivity and roughness YSZ thin film by using RF magnetron sputtering by varying the temperature deposition parameter. By lowering the YSZ thin film into nanostructure would enable for SOFC to be operate at lower temperature below 400°C. The YSZ nanostructure were controlled by varying the deposition parameters, including the deposition temperature and the substrate used. The crystalline of YSZ structure at 100W and temperature 300°C. The surface morphology of the films proved that at 300°C temperature rate deposition showed optimum growth morphology and density of YSZ thin films. Besides, the high deposition subtrate temperature affected the thickness of YSZ thin film at 80nm by using surface profiler. A higher rate of deposition is achievable when the sputtering mode of the Zr-Y target is metallic as opposed to oxide. YSZ is synthesizing to obtain the optimum thin film for SOFC application.

Microstructural and Properties of P-type Nickel Oxide (NiO) Thin Films Deposited by RF Magnetron Sputtering

2018 ◽  
Vol 24 (8) ◽  
pp. 5866-5871 ◽  
Author(s):  
G Balakrishnan ◽  
J. S. Ram Vinoba ◽  
R Rishaban ◽  
S Nathiya ◽  
O. S. Nirmal Ghosh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
High Mobility ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Type Semiconductor ◽  
P Type ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates using the RF magnetron sputtering technique at room temperature. The Argon and oxygen flow rates were kept constant at 10 sccm and 5 sccm respectively. The films were annealed at various temperatures (RT-300 °C) and its influence on the microstructural, optical and electrical properties were investigated. The X-ray diffraction (XRD) investigation of NiO films indicated the polycrystallinity of the films with the (111), (200) and (220) reflections corresponding to the cubic structure of NiO films. The crystallite size of NiO films was in the range ~4–14 nm. The transmittance of the films increased from 20 to 75% with increasing annealed temperature. The optical band gap of the films was 3.6–3.75 eV range for the as-deposited and annealed films. The Hall effect studies indicated the p-type conductivity of films and the film annealed at 300 °C showed higher carrier concentration (N), high conductivity (σ) and high mobility (μ) compared to other films. These NiO films can be used as a P-type semiconductor material in the devices require transparent conducting films.

Characteristics of Aluminum-Doped Zinc Oxide Films Grown Using Facing Target Sputtering for Transparent Electrode of Heterojunction Solar Cells

2021 ◽  
Vol 21 (3) ◽  
pp. 1799-1803
Author(s):  
Yujin Kim ◽  
Sangmo Kim ◽  
Jeongsoo Hong ◽  
Kyung Hwan Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Solar Cells ◽  
Transparent Electrode ◽  
High Energy ◽  
Heterojunction Solar Cells ◽  
Aluminum Doped Zinc Oxide ◽  
Facing Target Sputtering ◽  
High Energy Particles

In general sputtering, material characteristics can be degraded by high-energy particles located inside the plasma owing to the thin film surface. However, facing target sputtering (FTS) can be used to produce high-quality thin films through maximum control over substrate damage and the reduction of layer damage caused by high-energy particles impacting the substrate. Transparent conductive oxides (TCOs) are being applied to a variety of technologies, including displays and solar cells. The typical transparent electrode material is indium tin oxide (ITO), which contains rare and expensive raw materials. Aluminum-doped zinc oxide (AZO) has attracted increasing attention as a substitute to ITO because it is composed of abundantly available resources and is generally inexpensive. In this study, an AZO thin film was prepared using an FTS system for heterojunction solar cells. The effects of the deposition substrate temperature on the resulting electrical conductivity, structural properties, and optical properties of the AZO thin films were examined.

Low-Voltage Metal-Oxide Thin Film Transistors Using P-Type Tin-Oxide Semiconductors

2019 ◽  
Vol 19 (9) ◽  
pp. 5619-5623
Author(s):  
Y. L Chen ◽  
G. L Liou ◽  
H. H Hsu ◽  
P. C Chen ◽  
Z. W Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Oxide Thin Film ◽  
Oxide Semiconductors ◽  
Metal Oxide Thin Film ◽  
P Type
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