Analysis of Dislocations Nucleated after Nano Indentation Tests at Room Temperature in 4H-SiC
2012 ◽
Vol 717-720
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pp. 339-342
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Keyword(s):
4H-SiC intrinsic homoepitaxied single crystals have been nano indented at room temperature using a spherical indentor and the related deformation microstructures have been analyzed by Transmission Electron Microscopy. Dislocations are lying in the basal plane but have been found to be perfect, in contrast with observations made at higher temperature. Although such a change in deformation mechanism has been observed in other semiconductors such as Silicon and Indium Antimonide, it was unexpected in a very low stacking fault material such as SiC.
1967 ◽
Vol 25
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pp. 312-313
1969 ◽
Vol 27
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pp. 44-45
1972 ◽
Vol 30
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pp. 672-673
1990 ◽
Vol 48
(4)
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pp. 574-575
2011 ◽
Vol 306-307
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pp. 679-683