Influence of Electron-Beam Annealing Duration on MgB2 Film Superconductivity

2013 ◽  
Vol 745-746 ◽  
pp. 255-260
Author(s):  
Xiang Dong Kong ◽  
Qian Dai ◽  
Han Li ◽  
Qing Rong Feng ◽  
Ming Zhang Chu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
High Efficiency ◽  
Beam Current ◽  
Annealing Duration ◽  
Zero Field ◽  
Superconducting Properties ◽  
Dense Structure ◽  
Novel Method ◽  
The Relationship

A novel method to fabricate Magnesium diboride ( MgB2) film by electron beam annealing was presented. The MgB2 thin films could be prepared in a second or sub-second without any toxic diborane gas, extra Mg vapor or argon gas. The method has the advantages of short formation time and high efficiency. Based on this, the relationship between MgB2 conductivity and electron beam annealing duration was investigated experimentally with an accelerating voltage of 40 × 103 V, a beam current of 3×103 A and different annealing durations of 0.1796s, 1860s, 0.2108s, 0.2200s and 0.2332s. The experimental results showed the MgB2 film with 0.2200s has the highest Tconset , the most dense structure and the strongest diamagnetic signal. Its zero-field Jc at 5 K was 5.0 × 106 A/cm2. Also the variation of the film superconducting properties with the annealing duration was found, it will provide an important reference for the preparation of high-quality MgB2 thin films.

Magnesium Diboride Superconducting Films Synthesized by Different Electron-Beam Annealing Currents

2014 ◽  
Vol 887-888 ◽  
pp. 737-742
Author(s):  
Zhuang Xu ◽  
Xiang Dong Kong ◽  
Jun Wang ◽  
Han Li ◽  
Qian Dai ◽  
...  
Keyword(s):  
Electron Beam ◽  
Magnesium Diboride ◽  
Influence Factors ◽  
Spot Size ◽  
Beam Current ◽  
Annealing Duration ◽  
Zero Field ◽  
Beam Spot ◽  
Beam Spot Size ◽  
Beam Currents

Considerable progress to synthesize magnesium diboride (MgB2) films by electron-beam annealing has been made. A series of MgB2 films with a Tc higher than 35 K had been fabricated. MgB2 film superconductivity is affected by electron-beam accelerating voltage, beam current, annealing duration, beam spot size and Mg/B ratio. In order to fabricate better MgB2 films, these influence factors must be intensively studied. In this paper, the influence of e-beam current on superconductivity was investigated with an accelerating voltage of 32 kV, an annealing time of 0.26 s and different annealing beam currents of 9.9 mA, 10.7 mA, 12.8 mA, 13.3 mA and 14.0 mA. The results show the MgB2 film with 12.8 mA has the highest Tc and the densest structure. Its zero-field Jc at 15K has reached 3.2×106 A/cm2. The variation of the film superconducting properties with the beam currents was grasped, which will lay the foundation for the fabrication of high quality MgB2 thin films

The Fabrication of MgB2 Film and Nano-Bridge by EB and FIB

2016 ◽  
Vol 723 ◽  
pp. 415-420
Author(s):  
Yan Li Li ◽  
Zhuang Xu ◽  
Xiang Dong Kong ◽  
Li Han ◽  
Xiao Na Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Superconducting Property ◽  
Beam Current ◽  
Annealing Duration ◽  
Electron Beam Current ◽  
Transition Width

100nm thin Mg/B precursor films were prepared on SiC substrates in ZZSX-500 vacuum coating machine. They were annealed by electron-beam(EB) which only took fractions of a second. In this paper the best annealing duration to fabricate the superconducting MgB2 thin films was investigated. Under the optimized annealing condition(accelerating voltage 15kV, electron beam current 5mA, annealing duration 0.7s), the superconducting MgB2 thin film with critical temperature Tconset~35.3 K and transition width ∆Tc~1K was fabricated. Besides that, a nano-bridge (about 100×200nm2) was etched on the superconducting MgB2 thin film by Focused Ion Beam (FIB). It’s a relative simple and efficient method. The nano-bridge exhibited the effect of Josephson junction with RSJ characteristics. At the same time a little loss of superconducting property was detected.

Conventional methods of Lorentz microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 756-757
Author(s):  
H.Roy Geiss
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Vector Potential ◽  
Magnetic Thin Films ◽  
Incident Electron ◽  
Objective Lens ◽  
Zero Field ◽  
Magnetic Vector Potential ◽  
Lorentz Microscopy ◽  
Incident Electron Beam

Lorentz electron microscopy has been used to study magnetic domain/domain wall structures in thin films since 1959. Initially the contrast was described in terms of the classical Lorentz deflection of the incident electron beam. As a result Lorentz microscopy has become the general designation given to any of the techniques used to study the magnetic structure with electron beams. However, when sufficiently weak interactions are considered, a more rigorous quantum-mechanical description of the electron-specimen is required. It thus becomes necessary to consider the basis of magnetic imaging as following from the interaction between the magnetic vector potential of the specimen and the incident electron beam. This interaction results in a phase change of the propagating electron beam which is proportional to the path integral of the vector potential. Thus Lorentz microscopy, in reality, is simply phase contrast microscopy for a special class of objects.For many of the magnetic thin films investigated the coercivity of the film is so low that it must be in a nearly zero field environment in order to retain the domain structure. In order to achieve this condition experimentally, the objective lens is usually turned off and the diffraction lens is used as the image forming lens.

Properties of Electron-Beam Irradiated CuInSe2 Layers by Multi-Step Sputtering Method

2015 ◽  
Vol 15 (10) ◽  
pp. 7814-7818
Author(s):  
Chae-Woong Kim ◽  
Jin Hyeok Kim ◽  
Chaehwan Jeong
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Photovoltaic Devices ◽  
Cross Sectional ◽  
Rapid Crystallization ◽  
Novel Method ◽  
Annealing Method

Typically, CuInSe2 (CIS) based thin films for photovoltaic devices are deposited by co-evaporation or by deposition of the metals, followed by treatment in a selenium environment. This article describes CIS films that are instead deposited by DC and RF magnetron sputtering from binary Cu2Se and In2Se3 targets without the supply of selenium. As a novel method, electron beam annealing was used for crystallization of Cu2Se/In2Se3 stacked precursors. The surface, cross-sectional morphology, and compositional ratio of CIS films were investigated to confirm the possibility in crystallization without any addition of selenium. Our work demonstrates that the e-beam annealing method can be a good candidate for the rapid crystallization of Cu-In-Se sputtered precursors.

Photoinstability of UVA Sun Protection Products

1997 ◽  
Vol 14 (1) ◽  
pp. 23-25 ◽  
Author(s):  
C. Vaughan ◽  
J. Schimmel ◽  
M. Tapman
Keyword(s):  
Thin Films ◽  
Uv Radiation ◽  
Topical Application ◽  
High Efficiency ◽  
Sun Protection ◽  
Clinical Implications ◽  
Protection Factor ◽  
Sun Protection Factor ◽  
The Relationship ◽  
Sunscreen Product

Thin films of leading commercial high-sun-protection-factor sun products with UVA (ultraviolet 340- to 380-nm radiation) claims were compared to a new, high-efficiency sunscreen product that was designed to resist breakdown from exposure to UV radiation. The relationship between the thickness of the topical application of sunscreen films and the durability and efficacy of the product has significant clinical implications for physicians.

Magnetic and Crystalline Microstructure of SrRuO3 Thin Films

1997 ◽  
Vol 474 ◽  
Author(s):  
A. F. Marshall ◽  
L. Klein ◽  
C. H. Ahn ◽  
S. Dodge ◽  
J. Reiner ◽  
...  
Keyword(s):  
Thin Films ◽  
Uniaxial Anisotropy ◽  
Magnetic Domain ◽  
Zero Field ◽  
Ferromagnetic Transition ◽  
Transmission Electron ◽  
Crystal Films ◽  
Imaging Mode ◽  
The Relationship ◽  
Crystalline Microstructure

ABSTRACTThe relationship between the magnetic and crystalline microstructure of SrRu03 thin films is analyzed using transmission electron microscopy. Regions with a stripe magnetic domain structure in different orientations are observed in Lorentz imaging mode when the specimens are zero-field-cooled through the ferromagnetic transition temperature, Tc ≈ 150K. The different orientations of the stripe regions correspond to different crystallographic domains as determined by electron diffraction and magnetic image contrast; all of the six possible orientations of the orthorhombic SrRuO3 structure grown epitaxially on a SrTiO3 cubic substrate are identified. The results show that the uniaxial anisotropy indicated for these multi(crystal)domain films is the same as that determined for single crystal films by bulk magnetization measurements, and is therefore primarily magnetocrystalline in nature.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

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