Starting Point of Step-Bunching Defects on 4H-SiC Si-Face Substrates
2015 ◽
Vol 821-823
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pp. 367-370
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Keyword(s):
X Ray
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On 4H-SiC Si-face substrates after H2etching, the defect with “line” feature parallel to a step as “bunched-step line” was observed. Using X-ray topography and KOH etching, we confirmed that the bunched-step line originated from basal plane dislocation (BPD). Use of the substrate with the lowest BPD density will be effective to reduce bunched-step line that would affect oxide layer reliability on an epitaxial layer. However, more detail investigation needs to classify the BPD that would become a starting point of bunched-step line.
2019 ◽
Vol 963
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pp. 80-84
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Keyword(s):
2019 ◽
Vol 963
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pp. 276-279
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Keyword(s):
2009 ◽
Vol 615-617
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pp. 141-144
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Keyword(s):
2014 ◽
Vol 778-780
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pp. 851-854
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Keyword(s):
2017 ◽
Vol 897
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pp. 435-438
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Keyword(s):