Fabrication of Electrostatically Actuated 4H-SiC Microcantilever Resonators by Using n/p/n Epitaxial Structures and Doping-Selective Electrochemical Etching

2014 ◽  
Vol 778-780 ◽  
pp. 780-783 ◽  
Author(s):  
Kosuke Sato ◽  
Kohei Adachi ◽  
Hajime Okamoto ◽  
Hiroshi Yamaguchi ◽  
Tsunenobu Kimoto ◽  
...  
Keyword(s):  
Quality Factor ◽  
Multilayer Structure ◽  
Electrochemical Etching ◽  
Electrostatic Actuation ◽  
Narrow Gap ◽  
Single Crystalline ◽  
Electrostatically Actuated ◽  
Dc Bias ◽  
P Type ◽  
Mechanical Actuation

We fabricated electrostatically actuated single-crystalline 4H-SiC microcantilever resonators. To realize a narrow gap between cantilevers and substrate, we etched a thin p-type SiC layer in n/p/n multilayer structure by doping-selective electrochemical etching. The resonant characteristics of the fabricated 4H-SiC microcantilevers were investigated under a vacuum condition. Electrostatic actuation of microcantilevers was successfully performed by applying 10 mVrms ac voltage with 20 mV dc bias. The quality factor of 4H-SiC microcantilevers was above 100,000, which is about ten times higher than the quality factor of Si cantilevers with the same structure. Resonant characteristics were almost identical for mechanical actuation and electrostatic actuation.

scholarly journals Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC

2014 ◽  
Vol 104 (11) ◽  
pp. 111905 ◽  
Author(s):  
Hoang-Phuong Phan ◽  
Dzung Viet Dao ◽  
Philip Tanner ◽  
Li Wang ◽  
Nam-Trung Nguyen ◽  
...  
Keyword(s):  
Single Crystalline ◽  
P Type

scholarly journals Self- and Dopant Diffusion in Extrinsic Boron Doped Isotopically Controlled Silicon Multilayer Structures

2002 ◽  
Vol 719 ◽  
Author(s):  
Ian D. Sharp ◽  
Hartmut A. Bracht ◽  
Hughes H. Silvestri ◽  
Samuel P. Nicols ◽  
Jeffrey W. Beeman ◽  
...  
Keyword(s):  
Multilayer Structure ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Processes ◽  
Quantitative Description ◽  
Multilayer Structures ◽  
Dopant Diffusion ◽  
Enhanced Diffusion ◽  
Self Diffusion ◽  
Boron Doped ◽  
P Type

AbstractIsotopically controlled silicon multilayer structures were used to measure the enhancement of self- and dopant diffusion in extrinsic boron doped silicon. 30Si was used as a tracer through a multilayer structure of alternating natural Si and enriched 28Si layers. Low energy, high resolution secondary ion mass spectrometry (SIMS) allowed for simultaneous measurement of self- and dopant diffusion profiles of samples annealed at temperatures between 850°C and 1100°C. A specially designed ion-implanted amorphous Si surface layer was used as a dopant source to suppress excess defects in the multilayer structure, thereby eliminating transient enhanced diffusion (TED) behavior. Self- and dopant diffusion coefficients, diffusion mechanisms, and native defect charge states were determined from computer-aided modeling, based on differential equations describing the diffusion processes. We present a quantitative description of B diffusion enhanced self-diffusion in silicon and conclude that the diffusion of both B and Si is mainly mediated by neutral and singly positively charged self-interstitials under p-type doping. No significant contribution of vacancies to either B or Si diffusion is observed.

P-type single-crystalline ZnO films obtained by (N,O) dual implantation through dynamic annealing process

2016 ◽  
Vol 100 ◽  
pp. 468-473 ◽  
Author(s):  
Zhiyuan Zhang ◽  
Jingyun Huang ◽  
Shanshan Chen ◽  
Xinhua Pan ◽  
Lingxiang Chen ◽  
...  
Keyword(s):  
Annealing Process ◽  
Zno Films ◽  
Single Crystalline ◽  
P Type

Utilization of Low Wavelength Laser Linking with Electrochemical Etching to Produce Nano-Scale Porous Layer on p-Type Silicon Wafer with High Luminous Flux

2021 ◽  
Vol 10 (1) ◽  
pp. 016003
Author(s):  
Philip Nathaniel Immanuel ◽  
Chao-Ching Chiang ◽  
Tien-Hsi Lee ◽  
Sikkanthar Diwan Midyeen ◽  
Song-Jeng Huang
Keyword(s):  
Silicon Wafer ◽  
Porous Layer ◽  
Electrochemical Etching ◽  
Luminous Flux ◽  
Nano Scale ◽  
Type Silicon ◽  
P Type

scholarly journals Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs

2016 ◽  
Vol 11 (1) ◽  
Author(s):  
Youcef A. Bioud ◽  
Abderraouf Boucherif ◽  
Ali Belarouci ◽  
Etienne Paradis ◽  
Dominique Drouin ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Electrochemical Etching ◽  
P Type ◽  
Nanoporous Layer

Structural, Surface Morphological and Photoluminescence Properties of Nanostructured Porous Silicon Material for Optoelectronics Application

2012 ◽  
Vol 584 ◽  
pp. 290-294 ◽  
Author(s):  
Jeyaprakash Pandiarajan ◽  
Natarajan Jeyakumaran ◽  
Natarajan Prithivikumaran
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Light Emission ◽  
Electrochemical Etching ◽  
Light Emitting Diode ◽  
Radiative Transition ◽  
Sem Images ◽  
Optoelectronic Application ◽  
Gap Opening ◽  
P Type

The promotion of silicon (Si) from being the key material for microelectronics to an interesting material for optoelectronic application is a consequence of the possibility to reduce its device dimensionally by a cheap and easy technique. In fact, electrochemical etching of Si under controlled conditions leads to the formation of nanocrystalline porous silicon (PS) where quantum confinement of photo excited carriers and surface species yield to a band gap opening and an increased radiative transition rate resulting in efficient light emission. In the present study, the nanostructured PS samples were prepared using anodic etching of p-type silicon. The effect of current density on structural and optical properties of PS, has been investigated. XRD studies confirm the presence of silicon nanocrystallites in the PS structure. By increasing the current density, the average estimated values of grain size are found to be decreased. SEM images indicate that the pores are surrounded by a thick columnar network of silicon walls. The observed PL spectra at room temperature for all the current densities confirm the formation of PS structures with nanocrystalline features. PL studies reveal that there is a prominent visible emission peak at 606 nm. The obtained variation of intensity in PL emission may be used for intensity varied light emitting diode applications. These studies confirm that the PS is a versatile material with potential for optoelectronics application.

Pulsed DC Bias Effects on p-Type Semiconductor SrCu2O2 Film Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 13 (5) ◽  
pp. 3341-3345
Author(s):  
Hye-Won Seok ◽  
Sei-Ki Kim ◽  
Hyun-Seok Lee ◽  
Mi-Jae Lee ◽  
Byeong-Kwon Ju
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Pulsed Dc ◽  
Type Semiconductor ◽  
Dc Bias ◽  
P Type

Design of Electrostatic Micro Mirrors for Improved Stability Though Surface Contact

1998 ◽  
Author(s):  
Timothy Moulton ◽  
G. K. Ananthasuresh
Keyword(s):  
Design Method ◽  
Electrostatic Force ◽  
Electrostatic Actuation ◽  
Mems Devices ◽  
Complex Dynamic ◽  
Micro Electro Mechanical Systems ◽  
Electrostatically Actuated ◽  
Surface Contact ◽  
Improved Stability ◽  
Mems Process

Abstract There exists a need to stabilize the electrostatic actuation commonly used in Micro-Electro-Mechanical Systems (MEMS). Most electrostatically actuated MEMS devices act as variable capacitors with varying gap between the charged conductors. Electrostatic force in these devices is a nonlinear attractive force between the conductors resulting in a complex dynamic system. These systems are stable for only a small portion of the initial gap. In this paper a design method is presented for electrostatic micro-mirrors with improved stability. Controllable, stable electrostatic actuation can be achieved through surface contact between the two conductors. Once in contact with the surface, the compliance of the structure is used to stabilize the electrostatic actuation over a long range of motion. Beam based variable angle mirrors were designed and fabricated using the Multi-User MEMS Process at MCNC technology center. The design methods for stable electrostatic actuation were tested on these mirrors. Some characteristics are noted and their implementation into future designs is discussed.

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