DNA Detection Using SiC Nanowire Based Transistor

2016 ◽  
Vol 858 ◽  
pp. 1006-1009 ◽  
Author(s):  
Edwige Bano ◽  
Louis Fradetal ◽  
Valérie Stambouli ◽  
Giovanni Attolini
Keyword(s):  
Silicon Nanowires ◽  
Field Effect Transistor ◽  
Direct Detection ◽  
High Sensitivity ◽  
Nanoelectronic Devices ◽  
Chemical Inertness ◽  
Pathogenic Viruses ◽  
Effect Transistor ◽  
First Time

The fast and direct detection of small quantities of biomolecules improves early medical diagnosis of certain serious diseases as cancers and can be used to detect in situ the presence of pathogenic viruses or GMOs for food industry, protection environmental and bio-defense. Numerous research projects are conducted on nanoelectronic devices that can perform such detection with high sensitivity using nanostructures. Currently, these devices are made from Silicon nanowires [1]. For these applications, Silicon Carbide (SiC) material can advantageously replace Silicon as this semiconductor is now known to be biocompatible and to show a high chemical inertness [2]. Here, we present the electrical detection of DNA using a SiC Nanowire Field Effect Transistor (NWFET). The NWFETs are fabricated and then functionalized with DNA molecules. Between each step of the functionalization process, I-V characteristic measurements are performed. Comparative and simultaneous measurements are carried out on two SiC NWFETs: one is the sensor and the second one is used as a reference. Some interesting properties of the sensor are studied for the first time which opens the way to future developments of SiC nanowire based sensors.

Effect of Metal - Silicon Nanowire Contacts on the Performance of Accumulation Metal Oxide Semiconductor Field Effect Transistor

2008 ◽  
Vol 1144 ◽  
Author(s):  
Pranav Garg ◽  
Yi Hong ◽  
Md. Mash-Hud Iqbal ◽  
Stephen J. Fonash
Keyword(s):  
Metal Oxide ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Manufacturing Cost ◽  
Effect Transistor ◽  
The Impact

ABSTRACTRecently, we have experimentally demonstrated a very simply structured unipolar accumulation-type metal oxide semiconductor field effect transistor (AMOSFET) using grow-in-place silicon nanowires. The AMOSFET consists of a single doping type nanowire, metal source and drain contacts which are separated by a partially gated region. Despite its simple configuration, it is capable of high performance thereby offering the potential of a low manufacturing-cost transistor. Since the quality of the metal/semiconductor ohmic source and drain contacts impacts AMOSFET performance, we repot here on initial exploration of contact variations and of the impact of thermal process history. With process optimization, current on/off ratios of 106 and subthreshold swings of 70 mV/dec have been achieved with these simple devices

scholarly journals Electrically tunable low-density superconductivity in a monolayer topological insulator

Science ◽  
2018 ◽  
Vol 362 (6417) ◽  
pp. 926-929 ◽  
Author(s):  
Valla Fatemi ◽  
Sanfeng Wu ◽  
Yuan Cao ◽  
Landry Bretheau ◽  
Quinn D. Gibson ◽  
...  
Keyword(s):  
Ground State ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Quantum Spin ◽  
Topological Phases ◽  
Critical Temperatures ◽  
Topological States ◽  
Effect Transistor ◽  
Topological Phases Of Matter

Turning on superconductivity in a topologically nontrivial insulator may provide a route to search for non-Abelian topological states. However, existing demonstrations of superconductor-insulator switches have involved only topologically trivial systems. Here we report reversible, in situ electrostatic on-off switching of superconductivity in the recently established quantum spin Hall insulator monolayer tungsten ditelluride (WTe2). Fabricated into a van der Waals field-effect transistor, the monolayer’s ground state can be continuously gate-tuned from the topological insulating to the superconducting state, with critical temperaturesTcup to ~1 kelvin. Our results establish monolayer WTe2as a material platform for engineering nanodevices that combine superconducting and topological phases of matter.

High-sensitivity detection of Concanavalin A using MoS2-based field effect transistor biosensor

2021 ◽  
Vol 54 (24) ◽  
pp. 245401
Author(s):  
Mingyang Ma ◽  
Lemeng Chao ◽  
Yuhang Zhao ◽  
Jiafeng Ding ◽  
Zhongchao Huang ◽  
...  
Keyword(s):  
Concanavalin A ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Sensitivity ◽  
Effect Transistor ◽  
High Sensitivity Detection ◽  
Sensitivity Detection

scholarly journals Femto-molar sensitive field effect transistor biosensors based on silicon nanowires and antibodies

2013 ◽  
Author(s):  
F. Puppo ◽  
M.-A. Doucey ◽  
T. S. Y. Moh ◽  
G. Pandraud ◽  
P.M. Sarro ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Real-time and selective detection of nitrates in water using graphene-based field-effect transistor sensors

2018 ◽  
Vol 5 (8) ◽  
pp. 1990-1999 ◽  
Author(s):  
Xiaoyan Chen ◽  
Haihui Pu ◽  
Zipeng Fu ◽  
Xiaoyu Sui ◽  
Jingbo Chang ◽  
...  
Keyword(s):  
Real Time ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Selectivity ◽  
High Sensitivity ◽  
Selective Detection ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Modified Graphene ◽  
Benzyltriethylammonium Chloride

A benzyltriethylammonium chloride-modified graphene field-effect transistor sensor has high sensitivity, high selectivity and rapid response for nitrate detection.

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