The Effect of Incomplete Ionization on SiC Devices during High Speed Switching

2017 ◽  
Vol 897 ◽  
pp. 467-470 ◽  
Author(s):  
Kohei Ebihara ◽  
Koutarou Kawahara ◽  
Hiroshi Watanabe ◽  
Shuhei Nakata ◽  
Satoshi Yamakawa
Keyword(s):  
Dynamic Characteristics ◽  
Power Loss ◽  
High Speed ◽  
Deep Level ◽  
Deep Levels ◽  
Acceptor Level ◽  
Fast Switching ◽  
Switching Condition ◽  
Tcad Simulation ◽  
High Speed Switching

SiC devices such as MOSFETs and SBDs reduce power loss in fast-switching condition as compared to Si devices. However, shallow and deep levels in SiC significantly affect dynamic characteristics of SiC devices. We already reported that high densities of deep levels were discovered in Al+-implanted samples other than the shallow Al acceptor level. In this work, we applied the deep level to the TCAD simulation, and examined the behavior of the carriers at high dV/dt conditions.

Switchmode Hydraulic Power Supply Theory

2005 ◽  
Author(s):  
Jianwei Cao ◽  
Linyi Gu ◽  
Feng Wang ◽  
Minxiu Qiu
Keyword(s):  
Flow Rate ◽  
Dynamic Characteristics ◽  
Power Supply ◽  
Power Loss ◽  
High Speed ◽  
Hydraulic Pressure ◽  
Hydraulic Systems ◽  
Hydraulic Pump ◽  
Hydraulic Power ◽  
Supply Pressure

Switchmode hydraulic power supply is a new kind of energy-saving pressure converting system, which is originally proposed by the authors. It is mainly applied in multiple-actuator hydraulic systems, and installed between hydraulic pump and actuators (one switchmode hydraulic power supply for one actuator). It can provide pressure or flow rate that is adapted to the consumption of each actuator in the system by boosting or bucking the pressure, with low power loss, and conveniently, through high-speed switch valves, just like a hydraulic pressure transformer. There are two basic types of switchmode hydraulic power supply: pressure boost and pressure buck. Their structures and working principles are introduced. The dynamic characteristics of two typical types of switchmode hydraulic power supply, the pressure boost type and the pressure buck type, were analyzed through simulations and experiments. The performances were evaluated, and improvements on the efficiency of switchmode hydraulic power supply were proposed.

PWM Power Supply Using SiC RESURF JFETs with High Speed Switching

2013 ◽  
Vol 740-742 ◽  
pp. 1056-1059
Author(s):  
Satoshi Hatsukawa ◽  
Takashi Tsuno ◽  
Kazuhiro Fujikawa ◽  
Nobuo Shiga ◽  
Tuya Wuren ◽  
...  
Keyword(s):  
Pulse Width ◽  
High Speed ◽  
Pulse Width Modulation ◽  
Sine Wave ◽  
Pulse Width Modulated ◽  
Fast Switching ◽  
Input Waveform ◽  
Switching Characteristics ◽  
High Speed Switching ◽  
Reduced Surface

400V/2.5A 4H-SiC JFETs, having a reduced surface field (RESURF) structure have been fabricated. Measurements on the on-resistance, blocking, and switching characteristics were carried out. It was confirmed that the JFET has fast switching characteristics. A demonstration of a Pulse Width Modulation (PWM) decoder using JFETs was carried out. The input waveform, which is pulse width modulated 20.5MHz at 4.1MHz sine wave, as able to be decoded at 4.1MHz sine wave.

Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy

2009 ◽  
Vol 615-617 ◽  
pp. 381-384 ◽  
Author(s):  
Masashi Kato ◽  
Kosuke Kito ◽  
Masaya Ichimura
Keyword(s):  
Temperature Dependence ◽  
Deep Level Transient Spectroscopy ◽  
Room Temperature ◽  
Deep Level ◽  
Deep Levels ◽  
Donor Level ◽  
Acceptor Level ◽  
Transient Spectroscopy ◽  
Lower Resistivity

We measured the temperature dependence of the electrical resistivity for two high-purity undoped 6H-SiC bulk wafers with resistivities of 1.5103 cm and 8.3108 cm at room temperature. We also characterized the deep levels affecting the semi-insulating property by current deep level transient spectroscopy (I-DLTS) and photo induced current level transient spectroscopy (PICTS) measurements. The activation energies of the resistivity were 0.11 eV and 0.59 eV for the samples with lower and higher resistivities, respectively. In I-DLTS and PICTS spectra, the sample with lower resistivity shows a donor level at Ec0.17 eV and two acceptor levels around Ec0.40 eV, while the sample with higher resistivity shows acceptor levels at Ec0.77 eV and Ev+0.46 eV. We calculated the temperature dependence of the resistivity with a model considering one donor level and one acceptor level based on parameters from I-DLTS peaks. We reproduced the experimental results only for the sample with lower resistivity. The acceptor level near the valence band needs to be considered to explain the resistivity for the sample with higher resistivity.

Deep Levels in Type-II Superlattices

1993 ◽  
Vol 325 ◽  
Author(s):  
John D. Dow ◽  
Jun Shen ◽  
Shang Yuan Ren ◽  
William E. Packard
Keyword(s):  
Quantum Wells ◽  
High Speed ◽  
Deep Level ◽  
Deep Levels ◽  
Band Edge ◽  
Length Scale ◽  
Type Ii ◽  
Band Gap Engineering ◽  
Anion Site ◽  
And Control

AbstractQuantum confinement in superlattices affects shallow levels and band edges considerably (length scale of order 100 Å), but not deep levels (length scale of order 5 Å). Thus by band-gap engineering, one can move a band edge through a deep level, causing the defect responsible for the level to change its doping character. For example, the cation-on-anion-site defect in AlxGa1−xSb alloys is predicted to change from a shallow acceptor to a deep acceptor-like trap as the valence band edge passes through its T2 deep level with increasing At alloy content x. In a, Type-II superlattice, such as InAs/AlxGa1−xSb for x>0.2, where the conduction band minimum of the InAs should lie energetically below the antisite defect's T2 level in bulk AlxGa1−xSb, the electrons normally trapped in this deep level (when the defect is neutral) remotely dope the InAs n-type in the superlattice, leaving the defect positively charged. Thus a native defect that is thought of as an acceptor can actually be a donor and control the n-type doping of InAs quantum wells. The physics of such deep levels in superlattices and in quantum wells is summarized, and related to high-speed devices.

High-Speed Switching Method of MOSFETs Using Switching Assist Auxiliary Circuit

2013 ◽  
Vol 133 (12) ◽  
pp. 1186-1192
Author(s):  
Toshihiko Noguchi ◽  
Tomohiro Mizuno ◽  
Munehiro Murata
Keyword(s):  
High Speed ◽  
Switching Method ◽  
High Speed Switching ◽  
Auxiliary Circuit

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

2019 ◽  
Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Energy Dependence ◽  
Deep Level ◽  
Deep Levels ◽  
Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

Review on Switches for Power Applications: Macro to Micro

2019 ◽  
Vol 12 (3) ◽  
pp. 200-209
Author(s):  
Femi Robert
Keyword(s):  
Leakage Current ◽  
Power Loss ◽  
Low Cost ◽  
Electrical System ◽  
High Isolation ◽  
Fast Switching ◽  
Environmental Friendly ◽  
State Resistance ◽  
Very High ◽  
Bulk Production

Background: Switches are important component in electrical system. The switches needs to have the advantages of low ON-state resistance, very high OFF-state resistance, high isolation, no leakage current, less power loss, fast switching, high linearity, small size, arcless and low cost in bulk production. Also these switches have to be reliable and environmental friendly. Methods: In this paper, macro and microswitches for power applications are extensively reviewed and summarized. Various types of switches such as mechanical, solid-state, hybrid and micromechanical switches have been used for power applications are reviewed. The importance and challenge in achieving arcless switching is presented. Results: The use of micromechanical switches for power applications, actuation techniques, switching modes, reliability and lifetime are also reviewed. The modeling and design challenges are also reviewed. Conclusion: The applications of micromechanical switches shows that the switches can reduce the leakage current in battery operated systems and reduce the size of the system considerably.

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