Simulation Study of Switching-Dependent Device Parameters of High Voltage 4H-SiC GTOs
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The silicon carbide (SiC) “Super” gate turn-off thyristor (SGTO) is a viable device for high voltage and fast dI/dt switching applications. These devices are well suited for various pulsed power applications requiring high peak currents in the kilo-amp regime. The turn-on transition speed is determine by the spreading velocity, which depends on applied gate current, applied anode current density, minority carrier lifetime, and both the gate base-width and the drift region of the thyristor. The impact of device parameters on switching performance is discussed in this work.
2013 ◽
Vol 440
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pp. 82-87
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2007 ◽
Vol 131-133
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pp. 1-8
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2006 ◽
Vol 527-529
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pp. 1429-1432
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2015 ◽
Vol 821-823
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pp. 632-635
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