scholarly journals Localized Surface Plasmon on 6H SiC with Ag Nanoparticles

2017 ◽  
Vol 897 ◽  
pp. 634-637
Author(s):  
Yi Wei ◽  
Ahmed Fadil ◽  
Hai Yan Ou
Keyword(s):  
Ag Nanoparticles ◽  
Internal Quantum Efficiency ◽  
Minority Carrier Lifetime ◽  
Fdtd Simulation ◽  
Localized Surface Plasmon ◽  
Ag Nanoparticle ◽  
Ag Nps ◽  
Time Resolved ◽  
Donor Acceptor ◽  
Time Resolved Photoluminescence

Silver (Ag) nanoparticles (NPs) were deposited on the surface of bulk Nitrogen-Boron co-doped 6H silicon carbide (SiC), and the Ag NPs were observed to induce localized surface plasmons (LSP) resonances on the SiC substrate, which was expected to improve the internal quantum efficiency (IQE) of the emissions of the donor-acceptor pairs of the SiC substrate. Room-temperature measurements of photoluminescence (PL), transmittance and time-resolved photoluminescence (TRPL) were applied to characterize the LSP resonances. Through the finite-difference time-domain (FDTD) simulation of the LSP resonance of an Ag nanoparticle on the SiC substrate, it is predicted that when the diameter of the cross section on the xy plane of the Ag nanoparticle is greater than 225 nm, the LSP starts to enhance the PL intensity. With implementation of a 3rd order exponential decay fitting model to the TRPL results, it is found that the average minority carrier lifetime of the SiC substrate decreased.

scholarly journals Defect Characterization in ZnGeP2 by Time -Resolved Photoluminescence

1996 ◽  
Vol 450 ◽  
Author(s):  
N. Dietz ◽  
W. Busse ◽  
H. E. Gumlich ◽  
W. Ruderman ◽  
I. Tsveybak ◽  
...  
Keyword(s):  
Energy Range ◽  
Infrared Emission ◽  
Luminescence Spectra ◽  
Broad Emission Band ◽  
Wide Energy Range ◽  
Time Resolved ◽  
Broad Emission ◽  
Donor Acceptor ◽  
Donor States ◽  
Time Resolved Photoluminescence

AbstractSteady state and time-resolved photoluminescence (PL) investigations on ZnGeP2 crystals grown from the vapor phase by high pressure physical vapor transport (HPVT) and from the melt by gradient freezing (GF) are reported. The luminescence spectra reveal a broad infrared emission with peak position at 1.2 eV that exhibits features of classical donor-acceptor recombination. The hyperbolic decay characteristic over a wide energy range, investigated from 1.2 eV up to 1.5eV, suggest that this broad emission band is related to one energetic recombination center. Higher energetic luminescence structures at 1.6eV and 1.7eV were revealed after annealing of ZnGeP2 crystals in vacuum for a longer period of time. The emission decay behavior in this energy range is characterized by two hyperbolic time constants, viewed as the supercomposition of the decay from the broad emission center peaked at 1.2eV and additional donor-acceptor recombination emissions at 1.6eV and 1.7eV, respectively. ZnGeP2 crystals grown under Ge-deficient conditions by HPVT show an additional emission structure at 1.8 eV with sharp emission fine structures at 1.778 eV related to the presence of additional donor states.

Time-resolved photoluminescence in CdIn2S4

1987 ◽  
Vol 65 (3) ◽  
pp. 204-207 ◽  
Author(s):  
S. Charbonneau ◽  
E. Fortin ◽  
J. Beauvais
Keyword(s):  
Single Crystals ◽  
Free Electron ◽  
Continuous Wave ◽  
Time Window ◽  
Photoluminescence Spectra ◽  
Time Resolved ◽  
Spectral Bands ◽  
Window Technique ◽  
Donor Acceptor ◽  
Time Resolved Photoluminescence

Photoluminescence spectra of CdIn2S4 single crystals at 1.8 K under both continuous-wave (CW) and pulsed excitation were obtained. In the latter case, a variable time-window technique was used to observe the time evolution of the spectra between 0 and 100 μs. In contrast to previous studies, four spectral bands were observed under both CW and pulsed, intrinsic or extrinsic excitation. In particular, two bands previously unobserved under extrinsic excitation were detected at 1.35 and 1.68 eV, and have been attributed to donor–acceptor pairs and free-electron to acceptor transitions respectively.

scholarly journals Time Resolved Photoluminescence of Cubic Mg Doped GaN

1999 ◽  
Vol 572 ◽  
Author(s):  
R. Seitz ◽  
C. Gaspar ◽  
T. Monteiro ◽  
E. Pereira ◽  
B. Schoettker ◽  
...  
Keyword(s):  
Blue Emission ◽  
Spectral Shift ◽  
Excitation Density ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Deep Donor ◽  
Cubic Gan ◽  
Donor Acceptor ◽  
Time Resolved Photoluminescence ◽  
Mg Doped

ABSTRACTMg doped cubic GaN layers were studied by steady state and time resolved photoluminescence. The blue emission due to Mg doping can be decomposed in three bands. The decay curves and the spectral shift with time delays indicates donor-acceptor pair behaviour. This can be confirmed by excitation density dependent measurements. Furthermore temperature dependent analysis shows that the three emissions have one impurity in common. We propose that this is an acceptor level related to the Mg incorporation and the three deep donor levels are due to compensation effects.

scholarly journals On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation

2001 ◽  
Vol 6 ◽  
Author(s):  
F. Shahedipour ◽  
B.W. Wessels
Keyword(s):  
Luminescence Intensity ◽  
Random Distribution ◽  
Blue Emission ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Donor Acceptor ◽  
Shallow Acceptors ◽  
Donor Acceptor Pair ◽  
P Type ◽  
Time Resolved Photoluminescence

The decay dynamics of the 2.8 eV emission band in p-type GaN was investigated using time-resolved photoluminescence spectroscopy. The luminescence intensity decays non-exponentially. The decay dynamics were consistent with donor-acceptor pair recombination for a random distribution of pair distances. Calculations using the Thomas-Hopfield model indicated that recombination involves deep donors and shallow acceptors.

scholarly journals Injection-dependent Minority Carrier Lifetime in Epitaxial Silicon Layers by Time-resolved Photoluminescence

2015 ◽  
Vol 77 ◽  
pp. 139-148 ◽  
Author(s):  
Stéphanie Parola ◽  
Mehdi Daanoune ◽  
Anne Kaminski-Cachopo ◽  
Guillaume Chareyre ◽  
Mustapha Lemiti ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Epitaxial Silicon ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Effect of spectral overlap and mixing ratio on metal-semiconductor mixed colloid.

2021 ◽  
Author(s):  
Sabina Gurung ◽  
Asha Singh ◽  
J Jayabalan
Keyword(s):  
Optoelectronic Device ◽  
Semiconductor Quantum Dots ◽  
Advanced Materials ◽  
Mixing Ratio ◽  
Ag Nps ◽  
Time Resolved ◽  
Decay Component ◽  
Device Applications ◽  
Time Resolved Photoluminescence ◽  
Selection Of

Abstract Metal-semiconductor hybrid colloid is an emerging paradigm for construction of advanced materials having multiple functionalities. In such colloids, the ratio between the number of metal nanoparticles (NP) to the number of semiconductor quantum dots (QD) plays an important role in controlling the properties of the final hybrid colloid. We study the effect of mixing ratio of Ag NPs to the CdTe QDs on the photoluminscence (PL) properties of the final mixed hybrid colloid. Using steady-state and time-resolved photoluminescence, it has been shown that when exciton and plasmon spectrally overlap in a hybrid, the amplitude of the decay component of PL depends on the excitation energy. Such dependence is not observed in the case of hybrid where exciton and plasmon are spectrally separated. This study contributes to the appropriate selection of the shape of metal NPs in designing a hybrid material that is well suited for optoelectronic device applications.

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