Determination of Grain-Orientation-Dependent Stress in Coatings

2005 ◽  
Vol 105 ◽  
pp. 107-112
Author(s):  
Yan Dong Wang ◽  
Ru Lin Peng ◽  
Jonathan Almer ◽  
Magnus Odén ◽  
Y.D. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Orientation ◽  
Orientation Distribution ◽  
High Energy ◽  
Analysis Method ◽  
Linear Lattice ◽  
Lattice Strains ◽  
Stress Orientation ◽  
Deposition Processes

Quantitative interpretations of the so-called non-linear lattice strain distributions observed in coatings and thin films are important not only for determining the macro- and microstress fields, but also for inferring the active mechanisms of grain interactions during various deposition processes. In this paper, we present a method, which determines simultaneously both the macro- and micro- stress fields in the coatings and thin films. This method is extended from the previous stress-orientation distribution function (SODF) analysis method, which has already been used for residual stress analysis in bulk materials subjected to rolling and fatigue deformation. The validity of analysis method is demonstrated through measurements of lattice strains by high-energy x-ray and analysis of grain-orientation-dependent stresses in a CrN coating.

Determination of Composition and Linear Lattice Expansion Coefficient in Si1−x Gex/Si Thin Films by Simulation of X-Ray Rocking Curves

1990 ◽  
Vol 208 ◽  
Author(s):  
F. Cembali ◽  
R. Fabbri ◽  
M. Servidori ◽  
A. Zani ◽  
S. Iyer
Keyword(s):  
Thin Films ◽  
Expansion Coefficient ◽  
Molecular Beam ◽  
Depth Distribution ◽  
Waller Factor ◽  
Lattice Expansion ◽  
Linear Lattice ◽  
X Ray ◽  
Debye Waller Factor

ABSTRACTBy simulation of X-ray rocking curves of Si-Ge alloys grown on Si by molecular beam epitaxy and of Ge implanted samples, the Ge composition, the linear lattice expansion coefficient, the strain depth-distribution and the static Debye-Waller factor in the MBE alloys have been determined.

scholarly journals Effect of nanoparticles on the structure of thin films: atomistic simulation results

2018 ◽  
pp. 173-177
Author(s):  
Ф.В. Григорьев ◽  
В.Б. Сулимов ◽  
А.В. Тихонравов
Keyword(s):  
Thin Films ◽  
Atomistic Simulation ◽  
Thin Film Deposition ◽  
High Energy ◽  
Film Structure ◽  
Distribution Functions ◽  
Film Deposition ◽  
Deposition Processes ◽  
Deposition Simulation ◽  
Dynamics Method

Предложена модель, описывающая влияние наночастиц на атомистическую структуру напыляемых тонких пленок. Модель основана на развитом ранее методе молекулярно-динамического моделирования процесса напыления тонких оптических покрытий и применена к пленкам диоксида кремния. Наночастица предполагается неподвижной, ее взаимодействие с атомами описывается сферически симметричным потенциалом. Структура пленки вблизи наночастицы исследуется с помощью радиальных функций распределения. Показано, что поведение этих функций около наночастицы существенно отличается для случаев высокоэнергетического и низкоэнергетического напыления. A model describing the effect of nanoparticles on the structure of thin films structure is proposed. The model is based on the previously developed molecular dynamics method of thin film deposition simulation and is applied to the study of silicon dioxide thin films. A nanoparticle is considered as a fixed object whose interaction with film atoms is described by a spherical symmetric potential. Radial distribution functions are used to study the film structure near the nanoparticle. It is shown that the behavior of these functions is essentially different near nanoparticles in the cases of high-energy and low-energy deposition processes.

Progress of Microstructure and Texture of High Purity Tantalum Sputtering Target

2021 ◽  
Vol 1035 ◽  
pp. 704-711
Author(s):  
Jiang Hao Bai ◽  
Xiao Dong Xiong ◽  
Jun Feng Luo ◽  
Guo Jin Xu ◽  
Yong Jun Li
Keyword(s):  
Thin Films ◽  
Integrated Circuit ◽  
High Purity ◽  
Grain Orientation ◽  
Cold Working ◽  
Texture Evolution ◽  
Orientation Distribution ◽  
Recrystallization Annealing ◽  
Process Technology ◽  
Tantalum Target

In recent years, the IC (integrated circuit) industry has developed rapidly and the chip process technology has developed in the direction of higher density. Because of its good chemical stability, tantalum is used as a sputtering coating material for the diffusion barrier in the copper interconnect process. The uniform microstructure of the tantalum target directly affects the sputtering performance. The fabrication of high-quality thin films requires the tantalum target to have fine and uniform crystal grains and random grain orientation distribution. However, due to the characteristics of tantalum, it is easy to form a microstructure with {100} (<100>//ND) orientation on the surface and {111} (<111>//ND) orientation on the core during cold working. During the fabrication of thin films, the sputtering rate varies with the thickness of the target, which affects the sputtering stability. To provide ideas for improving the uniformity of the microstructure of the tantalum target, this article reviews the preparation processes that affect the grain orientation and size of the high-purity tantalum target, including forging methods, rolling methods, recrystallization annealing, etc., analyze the law of texture evolution of tantalum and introduction the research status of cold working and recrystallization.

A Useful Guide for X-Ray Stress Evaluation (XSE)

1983 ◽  
Vol 27 ◽  
pp. 81-99 ◽  
Author(s):  
Viktor M. Hauk ◽  
Eckard Macherauch
Keyword(s):  
Lattice Strain ◽  
Peak Position ◽  
X Rays ◽  
Linear Lattice ◽  
Stress Evaluation ◽  
X Ray ◽  
Copper Nickel ◽  
Lattice Strains ◽  
Aluminium Copper

AbstractThis paper summarizes experiences available for the measurement of lattice strains in different materials with different wavelengths to evaluate stresses by means of X-rays. The recommendations given are based on previous statements. Some principles of fundamentals of X-ray physics for the recording of interference lines with Ω and ψ-diffractometers are dealt with. Methods applicable for the determination of the peak position of the interference lines, the assessment of linear and non-linear lattice strain distributions, and tine calculation of stresses are outlined. For iron, aluminium, copper, nickel and titanium the constants for practical X-ray stress evaluation (XSE) and the parameters of measurement are tabled.

Spatial and temporal effects upon deposition of particles onto thin films of silicon dioxide produced using high-energy deposition processes

2013 ◽  
Vol 68 (3) ◽  
pp. 259-262 ◽  
Author(s):  
F. V. Grogoriev ◽  
V. B. Sulimov ◽  
O. A. Kondakova ◽  
I. V. Kochikov ◽  
A. V. Tikhonravov
Keyword(s):  
Thin Films ◽  
Silicon Dioxide ◽  
Energy Deposition ◽  
High Energy ◽  
Temporal Effects ◽  
Deposition Processes

Determination of the stress orientation distribution function using pulsed neutron sources

2003 ◽  
Vol 36 (1) ◽  
pp. 14-22 ◽  
Author(s):  
Y. D. Wang ◽  
X.-L. Wang ◽  
A. D. Stoica ◽  
J. W. Richardson ◽  
R. Lin Peng
Keyword(s):  
Distribution Function ◽  
Neutron Source ◽  
Orientation Distribution Function ◽  
Orientation Distribution ◽  
Interstitial Free ◽  
Neutron Sources ◽  
Stress Orientation ◽  
Pulsed Neutron ◽  
Pulsed Neutron Source

The stress orientation distribution function (SODF) was recently introduced as a mean-field representation to describe the grain-orientation dependence of intergranular stress. Pulsed neutron sources are ideally suited for the determination of the SODF since multiple reflections can be measured simultaneously with comparable precision. A method is developed for constructing the SODF from strain pole figures measured with a pulsed neutron source and demonstrated with cold-rolled interstitial-free steel. The experimental results are compared with those measured with a reactor-based constant-wavelength diffractometer. It is shown that access to a large number of reflections on a pulsed neutron source improves the precision of the experimental SODF and facilitatesin situstudies of the evolution of the intergranular stress during deformation and annealing.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Sign in / Sign up

Export Citation Format

Share Document