The Effect of DC Bias Voltage on the Structural and Optical Properties of Hydrogenated Nanocrystalline Si Thin Films
2007 ◽
Vol 124-126
◽
pp. 1261-1264
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Amorphous and nanocrystalline Si films were prepared by plasma enhanced chemical vapor deposition (PECVD). The films were deposited with a RF power of 100 W, while substrates were under DC biases varying from 0 to -600 V. The size as well as the concentration of Si nanocrystallites increased with raising the DC bias; the PL emission wavelength was shifted from 400 to 750 nm. A model for the nanostructural variation in the nc-Si:H films was suggested to describe the change in the size and concentration of the nanocrystallites as well as the amorphous matrix depending on the DC bias conditions.
2011 ◽
Vol 257
(9)
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pp. 3998-4003
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2007 ◽
Vol 36
(6)
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pp. 654-658
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2012 ◽
Vol 24
(4)
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pp. 1361-1368
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1977 ◽
Vol 14
(1)
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pp. 54-56
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