Dielectric and Conductivity Studies of Sr[(Mg0.32Co0.02) Nb0.66]O3 Thin Film

2009 ◽  
Vol 155 ◽  
pp. 145-149
Author(s):  
P.K. Mehta ◽  
Bhagwati Bishnoi ◽  
Ravi Kumar ◽  
R.J. Choudhary ◽  
D.M. Phase
Keyword(s):  
Thin Film ◽  
Activation Energy ◽  
Temperature Region ◽  
Single Phase ◽  
Dissipation Factor ◽  
Simultaneous Increase ◽  
X Ray Diffraction ◽  
Alternative Technologies ◽  
Shallow Traps ◽  
Single Phase Formation

Study of Sr[(Mg0.32Co0.02) Nb0.66]O3 [SMCN] thin films prepared by Pulsed Laser Deposition Technique (PLD) were carried out in the temperature range of 150 to 450K and frequency range of 100KHz to 1.1MHz. X-ray diffraction of the thin film shows single phase formation with monoclinic symmetry. The dielectric properties show enhanced ε' values compared to bulk suggesting promising applications in alternative technologies. Due to simultaneous increase in dissipation factor with temperature the net ac conductivity is found to be decreasing. Technologically important two step activation energy is observed in the film. This property can be used in switching devices. In low temperature region the activation energy corresponds to shallow traps while the migration of oxygen vacancies contributes in high temperature region.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

scholarly journals Cálculo de la energía de activación de la difusión de boro en la capa de Fe2B en la borurización por empaquetamiento de los aceros SAE 1050 y DIN UC1

2019 ◽  
pp. 8-17
Author(s):  
Merced Martínez-Vázquez ◽  
Marissa Vargas-Ramírez ◽  
Lourdes Cortés-Campos ◽  
Juan Gregorio Hortelano-Capetillo
Keyword(s):  
Activation Energy ◽  
Chemical Composition ◽  
Single Phase ◽  
Microscopic Analysis ◽  
Type Equation ◽  
Boron Diffusion ◽  
Mass Balance Equation ◽  
X Ray Diffraction ◽  
Iron Boride ◽  
X Ray

The layer of iron boride (Fe2B) was formed on the surface of two steels, SAE 1005 and DIN UC1; after being subjected a treatment by packaging, and it was used to study the effect of the chemical composition on the thickness of the layer, the growth kinetics and the activation energy for boron diffusion. The mass balance equation and the parabolic growth law were used at the Fe2B/substrate interface, considering that the layer begins to grow after an incubation time (t0). The microscopic analysis revealed in the iron boride its form irregular, type saw teeth, in both steels. The present phases were identified by X-Ray diffraction, corroborating the presence of a single-phase Fe2B layer. An Arrhenius-type equation was used to correlate the layer thickness with the activation energy, which for this study was determined in 132.3 and 143.9 kJ mol-1 for SAE1005 and DIN UC1 steels, respectively.

Monotonic and Transient Creep Experiments for Single Phase Gamma TiAl at Intermediate Temperatures

1996 ◽  
Vol 460 ◽  
Author(s):  
Min Lu ◽  
K. J. Hemker
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Yield Stress ◽  
Temperature Change ◽  
Creep Strength ◽  
Temperature Region ◽  
Single Phase ◽  
Dominant Role ◽  
Transient Creep ◽  
Transient Experiments

ABSTRACTMonotonie creep experiments (constant stress and constant temperature) of a single phase γ Ti47Al51Mn2 were conducted within a temperature region where the yield stress anomaly is observed (500°C - 600°C). The creep strength was found to have a normal temperature dependence. In addition to the monotonie creep experiments, temperature change experiments were performed. The creep activation energy obtained by the transient experiments was found to be significantly lower than that obtained from the monotonie experiments. TEM observations indicate that the microstructure evolves throughout creep, and no evidence of the formation of subgrains was observed. Instead, the mobility and the multiplication of ordinary dislocations were found to play a dominant role in intermediate temperature creep of single phase γ TiAl.

scholarly journals X-ray, IR and SEM studies on some Li-Cd ferrites

YMER Digital ◽  
2021 ◽  
Vol 20 (12) ◽  
pp. 333-340
Author(s):  
Sudhir Kulkarni ◽  
Keyword(s):  
Grain Size ◽  
Room Temperature ◽  
Single Phase ◽  
Lattice Parameter ◽  
Lithium Ferrite ◽  
Cadmium Content ◽  
X Ray Diffraction ◽  
Ceramic Method ◽  
X Ray ◽  
Single Phase Formation

Lithium-Cadmium ferrites with general formula Li0.5-x/2 Fe2.5-x/2 Cdx O4 (with x = 0,0.1,0.2....,0.7) were prepared by standard ceramic method. X-ray diffraction studies confirms single phase formation and lattice parameters were calculated. The crystal structure is cubic and lattice parameter increases with increasing Cd content. The infrared absorption (IR) spectra of all the samples were recorded in the range 200-800 cm-1 at room temperature in the KBr medium. Lithium ferrite shows four principal bands and some shoulders have been observed. The force constants Kt and Ko were calculated using Waldron's analysis. Scanning electron microscopy studies shows increase in grain size up to x = 0.1 and then the grain size decreases with increase in cadmium content.

Kinetic mechanisms for mullite formation from sol-gel precursors

1990 ◽  
Vol 5 (9) ◽  
pp. 1963-1969 ◽  
Author(s):  
Dong X. Li ◽  
William J. Thomson
Keyword(s):  
Activation Energy ◽  
Reaction Kinetics ◽  
Single Phase ◽  
Sol Gel ◽  
Mullite Formation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffusion Controlled ◽  
Kinetic Mechanisms ◽  
Kinetics Of

The reaction kinetics for the formation of mullite (3Al2O3 · 2SiO2) from sol-gel derived precursors were studied using dynamic x-ray diffraction (DXRD) and differential thermal analysis (DTA). The reaction kinetics of diphasic and single phase gels are compared and different reaction mechanisms are found for each gel. Mullite formation in the diphasic gel exhibits an Avrami type, diffusion-controlled growth mechanism with initial mullite formation temperatures of about 1250 °C and an activation energy on the order 103 kJ/mole. On the other hand, mullite formation from the single phase gel is a nucleation-controlled process with an initial formation temperature of 940 °C and a much lower activation energy of about 300 kJ/mole.

Preparation of Na0.5K0.5NbO3/La0.6Sr0.2Mn1.2O3/LaAlO3 Thin Film Structures by Pulsed Laser Deposition

1999 ◽  
Vol 574 ◽  
Author(s):  
Choong-Rae Cho ◽  
S. I. Khartsev ◽  
A. M. Grishin ◽  
Ture Lindbäick
Keyword(s):  
Dielectric Permittivity ◽  
Room Temperature ◽  
Single Phase ◽  
Pulsed Laser ◽  
Dissipation Factor ◽  
Processing Parameters ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Tan Δ

AbstractWe report on ferroelectric/giant magnetoresistive Na0.5K0.5NbO3/La0.6Sr0.2Mn1.2O3 (NKN/LSMO) heterostructures grown onto LaAlO3 (001) single crystal using KrF pulsed laser ablation of stoichiometric ceramic target. Main processing parameters have been optimized to obtain smooth LSMO template layer, avoid NKN-LSMO interdiffusion, preserve NKN stoichiometry against the lost of volatile potassium and sodium and achieve reasonable reliability of NKN film performance. X-ray diffraction θ- 2θ scans and rocking curves evidence for single-phase content and high c-axis orientation both in template LSMO and top NKN layers. Ferroelectric measurements yield remnant polarization Pr of 1.5 [C/cm2 and spontaneous polarization Ps of 7 μC/cm2 at electric field strength of 130 kV/cm. At room temperature, dielectric permittivity ε′ and dissipation factor tan δ have been found to vary from 595 to 555 and 0.046 to 0.029 respectively in the frequency range of 0.4 to 20 kHz. At 10 kHz dielectric permittivity linearly increases from 410 to 650 in the temperature range 77 K to 415 K while the dissipation factor below 320 K does not exceed 3%.

scholarly journals Ferroelectric Properties of Strontium Bismuth Titanate (SrBi4Ti4O15) Synthesized Using Solution Combustion Technique

Nano Hybrids ◽  
2013 ◽  
Vol 3 ◽  
pp. 67-79 ◽  
Author(s):  
Saransh Shrivastava ◽  
Oroosa Subohi ◽  
M.M. Malik
Keyword(s):  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
X Ray Diffraction ◽  
Solution Combustion ◽  
X Ray ◽  
Low Dielectric ◽  
Combustion Technique ◽  
Single Phase Formation ◽  
Ferroelectric Transition Temperature

The ferroelectric properties of layer-structured Strontium Bismuth Titanate (SBT) have been investigated in this study. SBT was prepared using solution combustion technique with glycine as a fuel. Single-phase formation of the layer-structured compound of SBT with orthorhombic structure was achieved after calcinations at 800 °C, and was confirmed by x-ray diffraction studies. Scanning electron micrograph shows that the grains exhibit a plate like morphology and possesses ne particle size. The as prepared sample exhibits ferroelectric properties with remnant polarization of 2Pr = 1.84 μC/cm2at coercive field 2Ec= 2.61 kV/cm and displays low dielectric loss. Its ferroelectric transition temperature (Tc) is found to be 450 °C.

Production of InSb Thin Films Through Annealing Sb2S3-In Thin Films

1999 ◽  
Vol 573 ◽  
Author(s):  
M. T. S. Nair ◽  
Y. Rodríguez-Lazcano ◽  
P. K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Indium Antimonide ◽  
Single Phase ◽  
Nitrogen Atmosphere ◽  
X Ray Diffraction ◽  
Large Area ◽  
Electrical And Optical Properties ◽  
Insb Thin Films ◽  
The Individual

ABSTRACTA method to produce large area indium antimonide thin films through a reaction, Sb2S3 + 2 In → 2 InSb + 3 S↑ is presented. A thin film of Sb2S3 with typically 0.2 μm thickness is produced on glass substrate by chemical bath deposition (CBD) at 10°C using thiosulfatoantimonate(III) complex. Subsequently, a thin film of indium is deposited on the Sb2S3 film by thermal evaporation. Annealing the thin film stack of Sb2S3-In at 300°C in a nitrogen atmosphere produces the InSb thin film. The formation of this film is confirmed by x-ray diffraction studies. We would discuss the optimization of the individual film thickness in the Sb2S3-In stack to produce a thin film of single phase InSb or a heterostructure, Sb2S3-InSb. The electrical and optical properties of the films are presented.

scholarly journals Processing and microwave dielectric properties of Sr5Ta4TiO17 ceramics

2018 ◽  
Vol 35 (4) ◽  
pp. 767-772
Author(s):  
Abdul Manan ◽  
Arbab Safeer Ahmad ◽  
Atta Ullah ◽  
Abid A Shah
Keyword(s):  
Dielectric Properties ◽  
Single Phase ◽  
Least Squares Method ◽  
Microwave Dielectric Properties ◽  
X Ray Diffraction ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Microwave Dielectric ◽  
Average Size ◽  
Single Phase Formation

Abstract Sr5Ta4TiO17 ceramics was processed via solid state mixed oxide sintering route. X-ray diffraction revealed single phase formation of Sr5Ta4TiO17 ceramics that crystallized into an orthorhombic crystal structure with a space group Pnnm with lattice parameters of a = 5.681 Å, b = 32.542 Å and c = 3.968 Å, refined by the least squares method. The unit cell density (ρth) was 6.71 g/cm3. The microstructure consisted of plate-like grains and the average size was increased from 2 μm to 5 μm with an increase in sintering temperature from 1450 °C to 1575 °C. Optimum microwave dielectric properties, i.e. єr ~ 66,Qufo ~ 8500 GHz and τf ~ 180 ppm/°C, were achieved for Sr5TaTiO17 ceramics sintered at 1550 °C for 4 h.

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