Electrical and Magnetic Properties of CuEu2W2O10 and Cu3Eu2W4O18

2012 ◽  
Vol 194 ◽  
pp. 104-107 ◽  
Author(s):  
Piotr Urbanowicz ◽  
Elzbieta Tomaszewicz ◽  
Tadeusz Groń ◽  
Henryk Duda ◽  
Slawomir Mazur ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Activation Energy ◽  
Magnetic Properties ◽  
Room Temperature ◽  
Linear Temperature Dependence ◽  
Linear Temperature ◽  
Weak Response ◽  
Thermally Activated ◽  
Electrical And Magnetic Properties ◽  
P Type

Magnetic susceptibility measurements showed both a weak response to magnetic field and a lack of the Curie-Weiss region for CuEu2W2O10and Cu3Eu2W4O18tungstates characteristic for the multiplet widths comparable to thermal energy. Magnetization measurements displayed the linear temperature dependence with the lower magnetic moment for Cu3Eu2W4O18in comparison with CuEu2W2O10, indicating that the effect of the electric charges associated with the surrounding ligands can change the multiplet width of individual states. It is affecting the electrical properties of examined tungstates which reveal the insulating state and low relative permittivity εr ~ 29 in case of CuEu2W2O10and the thermally activated p-type electrical conduction for Cu3Eu2W4O18with the activation energy of 1.11 eV and the large value of εr ~ 217 above the room temperature.

ELECTRICAL AND MAGNETIC PROPERTIES OF NANOCYSTALLINE DIAMOND FILMS

2005 ◽  
Vol 19 (01n03) ◽  
pp. 611-613
Author(s):  
K. J. LIAO ◽  
W. L. WANG ◽  
X. L. SUN ◽  
J. W. LU ◽  
C. Y. KONG
Keyword(s):  
Magnetic Field ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Geometrical Size ◽  
Electrical And Magnetic Properties ◽  
P Type ◽  
Hot Filament ◽  
The Magnetic Field

The magneto resistive effect in nanocystalline diamond films was investigated at room temperature. The nanocystalline diamond films on silicon were deposited by hot filament chemical vapor deposition. The experimental results showed that a striking magneto resistive effect in p-type doped nanocystalline diamond films was observed. The relative changes in the resistivity of the films were about 0.3 at room temperature under the magnetic field of 5T, and increased with decreasing the geometrical size of the devices. It was found that the magneto resistive effect in the nanocystalline diamond films was less than that of epitaxial diamond films. This was ascribed to a large number of grain boundaries. The results are discussed in detail.

Study of the Performance of Practical Magneto-Rheological Elastomers

2012 ◽  
Vol 430-432 ◽  
pp. 1979-1983
Author(s):  
Wei Bang Feng ◽  
Xue Yang ◽  
Zhi Qiang Lv
Keyword(s):  
Magnetic Field ◽  
Mechanical Properties ◽  
Mechanical Property ◽  
Magnetic Properties ◽  
External Magnetic Field ◽  
Magnetic Particles ◽  
Poor Performance ◽  
Electrical And Magnetic Properties ◽  
Intelligent Material ◽  
Magneto Rheological

Magneto-rheological elastomer( MR elastomer) is an emerging intelligent material made up of macromolecule polymer and magnetic particles. While a promising wide application it has in the fields of warships vibration controlling for its controllable mechanical, electrical and magnetic properties by external magnetic field, design and application of devices based on it are facing great limitations imposed by its poor performance in mechanical properties and magneto effect. Aiming at developing a practical MR elastomer, a new confecting method was proposed in this paper. Then, following this new method and using a specificly designed solidifying matrix, an amido- polyester MR elastomer was developed with its mechanical property systemically explored.

Martensitic Transformation and Mechanical Properties of Fe-Doped Ni54Mn21Ga25 Alloys

2011 ◽  
Vol 687 ◽  
pp. 500-504
Author(s):  
S. X. Xue ◽  
S.S. Feng ◽  
P. Y. Cai ◽  
Q T Li ◽  
H. B. Wang
Keyword(s):  
Magnetic Field ◽  
Mechanical Properties ◽  
Magnetic Properties ◽  
Martensitic Transformation ◽  
Curie Temperature ◽  
Directional Solidification ◽  
Transformation Temperature ◽  
Room Temperature ◽  
Martensitic Transformation Temperature ◽  
Polycrystalline Alloys

Ni54Mn21-xFexGa25（x=0,1,3,5,7,9）polycrystalline alloys were prepared by the technique of directional solidification and the effect of substituting Fe for Mn on the martensitic transformation and mechanical properties of the alloys was analyzed. It was found that the Curie temperature increased with increasing substitution while the martensitic transformation temperature decreased. The Fe-doped Ni54Mn21Ga25 alloys exhibit excellent magnetic properties at room temperature; the typical Ni54Mn20Fe1Ga25 alloy shows a large magnetic-induced-strain of -1040 ppm at a magnetic field of 4000 Oe.

scholarly journals Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition

2019 ◽  
Vol 14 (29) ◽  
pp. 37-43 ◽  
Author(s):  
Raied K. Jamal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Transport Mechanism ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Concentration Increase ◽  
Annealing Temperatures ◽  
P Type

The electrical properties of pure NiO and NiO:Au Films which aredeposited on glass substrate with various dopant concentrations(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Coannealing temperature will be presented. The results of the hall effectshowed that all the films were p-type. The Hall mobility decreaseswhile both carrier concentration and conductivity increases with theincreasing of annealing temperatures and doping percentage, Thus,indicating the behavior of semiconductor, and also the D.Cconductivity from which the activation energy decrease with thedoping concentration increase and transport mechanism of the chargecarriers can be estimated.

Static Recovery Activation Energy of Pure Aluminum at Room Temperature

2014 ◽  
Vol 136 (3) ◽  
Author(s):  
Yeh An-Chou ◽  
Chuang Ho-Chieh ◽  
Kuo Chen-Ming
Keyword(s):  
Activation Energy ◽  
Room Temperature ◽  
Pure Aluminum ◽  
Pure Copper ◽  
Tensile Tests ◽  
Engineering Strain ◽  
Static Recovery ◽  
Thermally Activated ◽  
Recovered Strain ◽  
Dislocation Annihilation

Thermally activated energy, which varies linearly with static recovered strain, is calculated from static recovery experiments of pure aluminum initially plastically deformed by strain-rate-controlled tensile tests up to 10% engineering strain at room temperature. The activation energy at the initial static recovery is 20 kJ mol−1, which is much less than that of pure copper and attributed to the dislocation annihilation by glide or cross-slip as well as higher stacking fault energy. Once dislocation annihilation processes are exhausted, more energy is required for subgrains to form and then grow. Eventually the recovered strain is slowed down and gradually saturated.

The Crystallization of a-ZnTe

1975 ◽  
Vol 53 (22) ◽  
pp. 2481-2484 ◽  
Author(s):  
J. B. Webb ◽  
D. E. Brodie
Keyword(s):  
Activation Energy ◽  
Room Temperature ◽  
Crystallization Process ◽  
Amorphous Material ◽  
Amorphous State ◽  
Zinc Telluride ◽  
Thermally Activated ◽  
Maximum Time

The crystallization of amorphous zinc telluride (a-ZnTe) has been studied as a function of temperature in the range 350 K < T < 390 K. The crystallization process is thermally activated with an activation energy of 1.6 eV. The time for the onset of significant crystallization at room temperature for films of air-annealed a-ZnTe is found to be ~100 years. The study of the crystallization process is essential in order to determine the maximum time allowed for a measurement to be performed at a given temperature on a sample of amorphous material without significantly altering its amorphous state.

scholarly journals Visible Light Activated Room Temperature Gas Sensors Based on CaFe2O4 Nanopowders

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 834 ◽  
Author(s):  
Qomaruddin ◽  
Cristian Fàbrega ◽  
Andreas Waag ◽  
Andris Šutka ◽  
Olga Casals ◽  
...  
Keyword(s):  
Visible Light ◽  
Gas Sensors ◽  
Room Temperature ◽  
Oxide Semiconductor ◽  
Light Activation ◽  
Thermally Activated ◽  
Green Led ◽  
Sensor Activation ◽  
P Type ◽  
Visible Light Activation

Gas sensors based on CaFe2O4 nanopowders, which are p–type metal oxide semiconductor (MOX), have been fabricated and assessed for ethanol gas monitoring under visible light activation at room temperature. Regardless of their inferior sensitivity compared to thermally activated counterparts, the developed sensors have shown responsive sensing behavior towards ethanol vapors confirming the ability of using visible light for sensor activation. LEDs with different wavelengths (i.e., 465–590 nm) were employed. The highest sensitivity (3.7%) was reached using green LED activation that corresponds to the band gap of CaFe2O4.

Magnetite thin films grown on different flexible polymer substrates at room temperature: Role of antiphase boundaries in electrical and magnetic properties

2020 ◽  
Vol 846 ◽  
pp. 156368
Author(s):  
Mohammad Shahnawaze Ansari ◽  
Mohd Hafiz Dzarfan Othman ◽  
Mohammad Omaish Ansari ◽  
Sana Ansari ◽  
Huda Abdullah ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Room Temperature ◽  
Antiphase Boundaries ◽  
Polymer Substrates ◽  
Electrical And Magnetic Properties ◽  
Flexible Polymer

Magnetic and magnetoresistive properties of nanocomposites based on Co and SiO

2019 ◽  
Vol 33 (12) ◽  
pp. 1950113 ◽  
Author(s):  
I. M. Pazukha ◽  
Y. O. Shkurdoda ◽  
A. M. Chornous ◽  
L. V. Dekhtyaruk
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Magnetic Properties ◽  
Room Temperature ◽  
Annealing Process ◽  
Anisotropic Character ◽  
Co Concentration ◽  
Beam Method ◽  
The Magnetic Field ◽  
Film Nanocomposites

A series of thin-film nanocomposites based on ferromagnetic metal Co and insulator SiO were prepared using an electron-beam method. The magnetoresistive and magnetic properties of these structures deposited at room temperature and then annealed to 700 K were investigated. The results showed that at the Co concentration 40 [Formula: see text]x [Formula: see text] 60 at.%, thin-film nanocomposites exhibit magnetoresistance (MR) that is conditional on spin-dependent tunnelling of electrons. This range of concentrations corresponds to the prepercolation area according to the magnetic investigations. For samples with x [Formula: see text] 70 at.%, the anisotropic character of MR peculiar to the homogeneous ferromagnetic materials appears. According to the magnetic properties study, this range of concentrations corresponds to the area after transition through the percolation threshold. The annealing process in temperature range from 300 K to 700 K in the magnetic field slightly influenced the magnetoresistive properties of the thin-film nanocomposites based on Co and SiO for all range of concentrations.

Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy

2020 ◽  
Vol 114 ◽  
pp. 113842
Author(s):  
A. Nardo ◽  
M. Meneghini ◽  
A. Barbato ◽  
C. De Santi ◽  
G. Meneghesso ◽  
...  
Keyword(s):  
Activation Energy ◽  
New Method ◽  
Thermally Activated ◽  
P Type
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