Texture Etched Aluminium Doped Zinc Oxide-Structural and Electrical Properties

1999 ◽  
Vol 67-68 ◽  
pp. 277-282 ◽  
Author(s):  
A. Löffl ◽  
H. Kerber ◽  
H.-W. Schock ◽  
O. Kluth ◽  
L. Houben ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Electrical Properties ◽  
Structural And Electrical Properties

Structural and electrical properties of sputtered indium–zinc oxide thin films

2006 ◽  
Vol 515 (4) ◽  
pp. 1364-1369 ◽  
Author(s):  
D.Y. Ku ◽  
I.H. Kim ◽  
I. Lee ◽  
K.S. Lee ◽  
T.S. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Oxide Thin Films ◽  
Indium Zinc Oxide ◽  
Structural And Electrical Properties

A Study of the Structural and Electrical Characteristics of Thermally Oxidized Al-Doped Zn3N2 Film on Glass

2012 ◽  
Vol 545 ◽  
pp. 294-299
Author(s):  
L.Y. Low ◽  
Mat Johar Abdullah ◽  
N.H. Al-Hardan
Keyword(s):  
Zinc Oxide ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Xrd Analysis ◽  
Nitride Film ◽  
Electrical Characteristics ◽  
Glass Substrates ◽  
Zinc Nitride ◽  
Structural And Electrical Properties

We report the deposition of aluminium doped zinc nitride film (Al-Zn3N2) on glass substrates by RF sputtering. Thermal oxidation of the film under different annealing temperature (500°C to 600°C) was carried out. Structural and electrical properties of the annealed films were investigated. XRD analysis showed that Al-Zn3N2film was successfully converted into Al-N zinc oxide (ANZO) at 500°C. I-V characteristics of the films were measured and the lowest estimated resistivity of the films of 4kΩ.cm can be achieved at 600°C.

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