A Study of the Structural and Electrical Characteristics of Thermally Oxidized Al-Doped Zn3N2 Film on Glass
Keyword(s):
We report the deposition of aluminium doped zinc nitride film (Al-Zn3N2) on glass substrates by RF sputtering. Thermal oxidation of the film under different annealing temperature (500°C to 600°C) was carried out. Structural and electrical properties of the annealed films were investigated. XRD analysis showed that Al-Zn3N2film was successfully converted into Al-N zinc oxide (ANZO) at 500°C. I-V characteristics of the films were measured and the lowest estimated resistivity of the films of 4kΩ.cm can be achieved at 600°C.
1999 ◽
Vol 67-68
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pp. 277-282
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2016 ◽
Vol 41
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pp. 436-440
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