High-Temperature Spin-On Adhesives for Temporary Wafer Bonding

2007 ◽  
Vol 4 (3) ◽  
pp. 105-111 ◽  
Author(s):  
S. Pillalamarri ◽  
R. Puligadda ◽  
C. Brubaker ◽  
M. Wimplinger ◽  
S. Pargfrieder
Keyword(s):  
High Temperature ◽  
Wafer Bonding ◽  
Heat Dissipation ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
Performance Requirements ◽  
Wide Range ◽  
Bonding Properties ◽  
Partial List ◽  
Wafer Thinning

Wafer thinning has been effectively used to improve heat dissipation in power devices and to fabricate flexible substrates, small chip packages, and multiple chips in a package. Wafer handling has become an important issue due to the tendency of thinned wafers to warp and fold. Thinned wafers need to be supported during the backgrinding process, lithography, deposition, etc. Temporary wafer bonding using removable adhesives provides a feasible route to wafer thinning. Existing adhesives meet only a partial list of performance requirements. They do not meet the requirements of high-temperature stability combined with ease of removal. This paper reports on the development of a wide range of temporary adhesives to be used in wafer thinning applications that use both novel and conventional bonding and debonding methods. We have developed a series of novel removable high-temperature spin-on adhesives with excellent bonding properties and a wide range of operating temperatures for bonding and/or debonding to achieve a better processing window.

scholarly journals High-Performance Temporary Adhesives for Wafer Bonding Applications

2006 ◽  
Vol 970 ◽  
Author(s):  
Rama Puligadda ◽  
Sunil Pillalamarri ◽  
Wenbin Hong ◽  
Chad Brubaker ◽  
Markus Wimplinger ◽  
...  
Keyword(s):  
High Performance ◽  
Heat Dissipation ◽  
Driving Forces ◽  
Three Dimensional ◽  
Temperature Stability ◽  
Thickness Variation ◽  
High Temperature Stability ◽  
Process Step ◽  
Wide Range ◽  
Wafer Thinning

ABSTRACTMyriad structures for stacking chips, power devices, smart cards, and thin substrates for processors have one thing in common: thin silicon. Wafer thinning will soon be an essential process step for most of the devices fabricated and packaged henceforth. The key driving forces for thinned wafers are improved heat dissipation, three-dimensional stacking, reduced electrical resistance, and substrate flexibility. Handling of thin and ultrathin substrates however is not trivial because of their fragility and tendency to warp and fold. The thinned substrates need to be supported during the backside grinding process and through the subsequent processes such as lithography, deposition, etc. Using temporary adhesives to attach the processed device wafer to a rigid carrier wafer offers an efficient solution. The key requirements for such materials are ease of application, coating uniformity with minimal thickness variation across the wafer, good adhesion to a wide variety of surfaces, thermal stability in processes such as dielectric deposition and metallization, and ease of removal to allow high throughput. An additional requirement for these materials is stability in harsh chemical environments posed by processes such as etching and electroplating. Currently available materials meet only a subset of these requirements. None of them meet the requirement of high-temperature stability combined with ease of removal. We have developed adhesives that meet a wide range of post-thinning operating temperatures. Additionally, the materials are soluble in industry-accepted safe solvents and can be spin-applied to required thicknesses and uniformity. Above all, the coatings can be removed easily without leaving any residue. This paper reports on the development of a wide range of temporary adhesives that can be used in wafer thinning applications while applying both novel and conventional bonding and debonding methods.

High Temperature Performance Evaluation and Life Prediction for Titanium Modified Silicone Used in Light-Emitting Diodes Chip Scale Packages

2020 ◽  
Vol 142 (2) ◽  
Author(s):  
Si Yu ◽  
Zhen Wang ◽  
Jiajie Fan ◽  
Cheng Qian ◽  
Zhentao Deng ◽  
...  
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Temperature Stability ◽  
Cost Effective ◽  
Practical Significance ◽  
Light Sources ◽  
High Temperature Stability ◽  
Light Emitting

Abstract Light-emitting diodes (LED) chip scale packages (CSPs) have been promoted as a new light source with many advantages in smaller package size, lower material and process cost, and better heat dissipation effect. However, as it is exposed in harsh environments such as high temperature, high humidity, and high blue light irradiation, silicone material used in LED CSPs always suffers deterioration, which will seriously affect the LED's reliability and working life. Thus, the preparation of high reliable silicone has practical significance to promote the application of LED CSPs in lighting. In this research, titanium was introduced into the molecular chain of phenyl silicone by using the hydrolysis condensation method. A high temperature aging test was then performed to the prepared silicone before and after modification, and their optical, thermomechanical, and dielectric properties were characterized to evaluate their reliabilities. The results show that: (1) the Arrhenius function with the dielectric property as an aging characterization can be used as a temperature accelerated life model to predict the service life of the prepared silicone and (2) the titanium modified silicone can advance the high temperature stability on optical properties, thermomechanical, and dielectric properties and enhance the life expectancy. The major contributions of this study are to support the improvement of the novel LED CSP packaging materials and processes, and also to provide the technical guidance on the fast, accurate, and cost-effective reliability assessment for high-quality LED light sources.

UNS N06455

Alloy Digest ◽  
1989 ◽  
Vol 38 (1) ◽  
Keyword(s):  
Corrosion Resistance ◽  
High Temperature ◽  
Stress Corrosion Cracking ◽  
Temperature Stability ◽  
Heat Treating ◽  
High Ductility ◽  
High Temperature Stability ◽  
Nickel Chromium ◽  
Long Time ◽  
Resistance To Stress

Abstract UNS NO6455 is a nickel-chromium-molybdenum alloy with outstanding high-temperature stability as shown by high ductility and corrosion resistance even after long-time aging in the range 1200-1900 F. The alloy also has excellent resistance to stress-corrosion cracking and to oxidizing atmospheres up to 1900 F. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on corrosion resistance as well as forming, heat treating, machining, and joining. Filing Code: Ni-367. Producer or source: Nickel and nickel alloy producers.

UNS R54620

Alloy Digest ◽  
1987 ◽  
Vol 36 (7) ◽  
Keyword(s):  
Titanium Alloy ◽  
High Temperature ◽  
Time Use ◽  
Temperature Stability ◽  
High Strength ◽  
Heat Treating ◽  
High Temperature Stability ◽  
Beta Titanium Alloy ◽  
Beta Titanium ◽  
Long Time

Abstract UNS No. R54620 is an alpha-beta titanium alloy. It has an excellent combination of tensile strength, creep strength, toughness and high-temperature stability that makes it suitable for service to 1050 F. It is recommended for use where high strength is required. It has outstanding advantages for long-time use at temperatures to 800 F. This datasheet provides information on composition, physical properties, elasticity, tensile properties, and bend strength as well as creep. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: Ti-86. Producer or source: Titanium alloy mills.

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