Development of Dielectric Material Enabling Low Insertion Loss of Organic Substrates at Various Operational Temperatures

2020 ◽  
Vol 2020 (1) ◽  
pp. 000211-000216
Author(s):  
Tatsushi Hayashi ◽  
Po Yu Lin ◽  
Ryoichi Watanabe ◽  
Seiko Ichikawa

Abstract With IP traffic increasing by 10-fold over the last decade, together with limitation and cost increase due to shrinking semiconductor nodes have led to requiring technological breakthrough in the packaging of semiconductor devices especially those used in high performance computing (HPC).This increase in IP traffic has led to requirement for higher data speed transmission in these devices, and consequently packaging technologies that enable those solutions such as 2.5D packaging utilizing silicon interposers. Furthermore, in recent years, increasing number of dies are placed in a single package for these devices thereby making the size of silicon interposers larger. Thus, the design of organic substrates used in these devices, are also becoming ever complex often with multiple layers with long trace lengths for routing increased number of IOs and allowing for power and signal control management. In order to facilitate the high speed data transmission requirement with longer trace lengths, stable low insertion loss design of organic substrates are becoming significantly important even when devices are exposed at elevated humidity or higher temperatures due to surrounding environment or from dies heating. Additionally, as silicon interposers are increasing in size, preventing stress build-up, which can cause cracking between the interposer and the organic substrate, is also becoming paramount. These requirements have led to innovative materials to be developed to enable organic substrates to have these properties. In this paper, we present a new dielectric build-up material for use in advanced organic substrates, by combining newly developed original resin with existing formulation technology that meet these criteria of enabling lower insertion loss with design that reduces deterioration even at elevated humidity and temperature, and furthermore having high crack resistance during temperature cycle testing.

1984 ◽  
Vol 5 (1) ◽  
Author(s):  
F. Auracher ◽  
D. Schicketanz ◽  
K.-H. Zeitler

SummaryWe report on a very fast (≥ 6 Gbit/s) Δβ-reversal directional-coupler modulator with low insertion loss (2 dB) for 1.3 μm wavelength operation. The design of the modulator permits easy and reproducible fabrication.


2019 ◽  
Vol 11 (08) ◽  
pp. 792-796
Author(s):  
Luping Li ◽  
Lijuan Dong ◽  
Peng Chen ◽  
Kai Yang

AbstractThis paper presents a low insertion loss low-pass filter based on the spoof surface plasmon polariton (SSPP) with single comb-shape. Compared with traditional ones, the proposed filter provides lower insertion loss and return loss by optimizing the structural parameters of the mode conversion and SSPP parts. According to the measurement results, the average insertion loss of the fabricated filter is 0.41 dB and the return loss of which at the near-zero-hertz band is <−25.9 dB. The S parameter comparison result between the unoptimized and optimized filters demonstrates that the optimized filter provides lower insertion loss and return loss, smaller size, and better out-of-band rejection. The dispersion comparison result reveals the reasons behind the improved performances. The better performances of the optimized filter proves that breaking the regularity of traditional SSPP filters is beneficial to the filter's performances.


RSC Advances ◽  
2016 ◽  
Vol 6 (55) ◽  
pp. 50166-50172 ◽  
Author(s):  
Xi-Bin Wang ◽  
Ming-Hui Jiang ◽  
Shi-Qi Sun ◽  
Jing-Wen Sun ◽  
Yun-Ji Yi ◽  
...  

A Mach–Zehnder interferometer type of electro-optic switch with passive-to-active integrated waveguides was fabricated based on SU-8 material, which exhibited low insertion loss and high-speed switching response.


2016 ◽  
Vol 88 (2) ◽  
pp. 1089-1098 ◽  
Author(s):  
Mohammad A.S. Bhuiyan ◽  
Yeoh Zijie ◽  
Jae S. Yu ◽  
Mamun B.I. Reaz ◽  
Noorfazila Kamal ◽  
...  

Modern Radio Frequency (RF) transceivers cannot be imagined without high-performance (Transmit/Receive) T/R switch. Available T/R switches suffer mainly due to the lack of good trade-off among the performance parameters, where high isolation and low insertion loss are very essential. In this study, a T/R switch with high isolation and low insertion loss performance has been designed by using Silterra 0.13µm CMOS process for 2.4GHz ISM band RF transceivers. Transistor aspect ratio optimization, proper gate bias resistance, resistive body floating and active inductor-based parallel resonance techniques have been implemented to achieve better trade-off. The proposed T/R switch exhibits 0.85dB insertion loss and 45.17dB isolation in both transmit and receive modes. Moreover, it shows very competitive values of power handling capability (P1dB) and linearity (IIP3) which are 11.35dBm and 19.60dBm, respectively. Due to avoiding bulky inductor and capacitor, the proposed active inductor-based T/R switch became highly compact occupying only 0.003mm2 of silicon space; which will further trim down the total cost of the transceiver. Therefore, the proposed active inductor-based T/R switch in 0.13µm CMOS process will be highly useful for the electronic industries where low-power, high-performance and compactness of devices are the crucial concerns.


2013 ◽  
Vol 798-799 ◽  
pp. 520-525 ◽  
Author(s):  
Cheng Peng Liu ◽  
Jian Gang Shi ◽  
Zheng Rong He ◽  
Wei Zou

a novel configuration for a novel ultra wideband switch is presented in this paper. This switch using 0.5um GaAs process in ADS2008 simulator. Switch should be designed to trade-off insertion loss, isolation, bandwidth, and return loss. The aims of design are to provide low insertion loss along with high isolation. The design using integration inductor and resistor in parallel, and this switch exhibits high performance: over DC-10.6GHz, insertion loss is lower than-1.624dB; the ripple variation of insertion loss is less than ±0.25dB; The isolation is lower than-51.336dB; input return loss is lower than-16.402dB; on state, output return loss is lower than-15.919dB; off state, output return loss is lower than-18.294dB; on and off time are less than 4ns.


2019 ◽  
Vol 56 (15) ◽  
pp. 152302
Author(s):  
聂立霞 Lixia Nie ◽  
张燕 Yan Zhang ◽  
鲜仕林 Shilin Xian ◽  
秦俊 Jun Qin ◽  
王会丽 Huili Wang ◽  
...  

Author(s):  
Telesphor Kamgaing ◽  
Chee Hoo Lee ◽  
Kyu-Pyung Hwang ◽  
Xiang Yin Zeng ◽  
Jiangqi He ◽  
...  

This paper discusses the design, modeling and characterization of RF inductors and baluns in a multilayer organic substrate. In the first part of the paper, we systematically look at two types of spiral inductors for RF applications. More than 40 multi-turn spiral inductors covering inductance values from a few nH to 20 nH have been fabricated and fully characterized. Single turn inductors suitable for high-frequency applications with inductance values in the sub-nH range have also been fabricated and evaluated. In the second part of the paper, we discuss the design of a Marchand-type balun for 2.4 GHz Bluetooth and WLAN application. This 50:100-Ohm balun design employs staggered trace arrangement which results in improved insertion loss and robust performance. Both measurement and simulation data are presented to validate the package-embedded components.


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