Advanced Chemical Processes for Semi-additive PWB fabrication for Fine Line Formation Targeting Line and Space=5μm/5μm
Demand of powerful & fast computing requires the packaging configured with finer lines. The current requirement for Line and Space (L/S) is around 10μm/10μm, it will go down to less than that and 5 μm/5 μm is industry's target in our site. To achieve this miniaturization, a number of improvements are ongoing in equipment, material and chemical for surface finishing process. It seems there is a threshold which requires non-contiguous improvement for the miniaturization. The improvement in surface finishing process requires finer surface roughening for Dielectric material, selective dissolution of metals, or same metal made by different method such as Electroless copper and Electroplated copper, which never exist in the industry. In this paper, advanced chemical processes for semi-additive process (SAP) to fabricate PWB with fine line formation targeting L/S =5μm/5μm are reported. The series of improvements of chemical process enables confidence to manufacture fine lines which L/S=5μm/5μm using finer surface roughening of Electroless copper seed for better Dry Film Resist (DFR) formation, better stripping of the DFR, selective dissolution of Electroless copper seed, finer surface roughening for Solder Mask application, etc.