scholarly journals Large-area Uniform Deposition of Amorphous Hydrogenated Carbon Films using a Plasma CVD Method

2006 ◽  
Vol 19 (5) ◽  
pp. 673-678 ◽  
Author(s):  
Hideyuki Kodama ◽  
Satoshi Iizumi ◽  
Masayuki Nakaya ◽  
Akira Shirakura ◽  
Atsushi Morita ◽  
...  

2014 ◽  
Vol 54 (1S) ◽  
pp. 01AD04 ◽  
Author(s):  
Yuki Yasuoka ◽  
Toru Harigai ◽  
Jun-Seok Oh ◽  
Hiroshi Furuta ◽  
Akimitsu Hatta ◽  
...  

2001 ◽  
Vol 664 ◽  
Author(s):  
Shingo Okamoto ◽  
Akira Terakawa ◽  
Eiji Maruyama ◽  
Wataru Shinohara ◽  
Makoto Tanaka ◽  
...  

ABSTRACTThis paper reviews recent progress in large-area a-Si/a-SiGe tandem solar cells in Sanyo. Much effort has been devoted to increasing both the stabilized efficiency and the process throughput. A key issue in increasing the stabilized efficiency is thinner i-layer structure with an improved optical confinement effect. High-rate deposition of the i-layers has been investigated using rf (13.56MHz) plasma-CVD method while keeping the substrate temperature below 200 °C. A high photosensitivity of 106 of a-Si:H films maintain up to the deposition rate (Rd) of 15 Å/s by optimizing hydrogen dilution and other deposition conditions. It is of great importance to utilize the effect of hydrogen dilution which can reduce the incorporation of excess hydrogen in the films. The world's highest conversion efficiency of 11.2% has been achieved for a large-area (8252cm2) a-Si/a-SiGe tandem by combining the optimized hydrogen dilution and other solar cell related technologies.


1994 ◽  
Vol 349 ◽  
Author(s):  
William A. McGahan ◽  
John A. Woollam

ABSTRACTAmorphous hydrogenated carbon (a-C:H) thin films are of great importance in a number of industrial applications due to their hardness, chemical stability, and optical transparency. In many applications, the thickness of the a-C:H film and/or its optical properties are critical for the performance of the complete structure, and, as a result, a means of measuring these quantities is important. In this work we review the use of spectroscopic ellipsometry and transmission measurements for the estimation of the thickness and optical constants of thin a-C:H films. Spectra are shown for films exhibiting Tauc effective bandgaps ranging from 0 - 2.3 eV. The films were prepared by magnetron sputtering and plasma CVD on both silicon and glass substrates. The general energy dependence of the a-C:H optical constants is discussed in terms of the absorption processes which occur in the film.


Shinku ◽  
1985 ◽  
Vol 28 (4) ◽  
pp. 213-221
Author(s):  
Akira DOI ◽  
Yoshio MURAKAMI
Keyword(s):  

2013 ◽  
Vol 228 ◽  
pp. S15-S18 ◽  
Author(s):  
Tatsuya Urakawa ◽  
Hidehumi Matsuzaki ◽  
Daisuke Yamashita ◽  
Giichiro Uchida ◽  
Kazunori Koga ◽  
...  

2011 ◽  
Vol 519 (20) ◽  
pp. 6688-6692 ◽  
Author(s):  
Ta-Lun Sung ◽  
Yu-An Chao ◽  
Chung-Ming Liu ◽  
Kungen Teii ◽  
Shinriki Teii ◽  
...  

Vacuum ◽  
1996 ◽  
Vol 47 (9) ◽  
pp. 1047-1051 ◽  
Author(s):  
M Basu ◽  
AB Maity ◽  
B Maiti ◽  
S Chaudhuri ◽  
AK Pal

2009 ◽  
Vol 1222 ◽  
Author(s):  
Takuya Nomura ◽  
Kazunori Koga ◽  
Masaharu Shiratani ◽  
Yuichi Setsuhara ◽  
Makoto Sekine ◽  
...  

AbstractWe have studied effects of H atom source on deposition profiles of carbon films, deposited by H assisted anisotropic plasma CVD method. Deposition rate normalized by that for the aspect ratio of 1 at sidewall and bottom decreases with increasing discharge power of H atom source from 0 W to 500 W, because the incident H atom flux per surface area in a trench increases and H atoms etch carbon films.


1991 ◽  
Vol 17 (2) ◽  
pp. 305-312
Author(s):  
Tohru Mitomo ◽  
Tomohiro Ohta ◽  
Hiroaki Sasaki ◽  
Kenichi Ohtsuka ◽  
Yasuhiro Habu

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