The Fabrication of an Applicative Device for Trench Width and Depth Using Inductively Coupled Plasma and the Bulk Silicon Etching Process

Abstract GaAs nanostructures has attracted more and more attention due to its excellent properties such as increasing photon absorption. The fabrication process on GaAs substrate were rarely reported and most of the preparation processes are complex. Here, we reported a black GaAs fabrication process using a simple Inductively coupled plasma (ICP) etching process，with no extra lithography process. The fabricated sample has a low Reflectance value，close to zero. Besides, the black GaAs also displayed hydrophobic property, with a water contact angle (CA) of 125°. This kind of black GaAs etching process could be added to the fabrication workflow of photodetectors and solar cell devices to further improve their characteristics.

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The etching process and mechanism analysis of Ta-Sb2Te3 film based on inductively coupled plasma

Journal of Semiconductors ◽

10.1088/1674-4926/41/12/122103 ◽

2020 ◽

Vol 41 (12) ◽

pp. 122103

Author(s):

Yongkang Xu ◽

Sannian Song ◽

Wencheng Fang ◽

Chengxing Li ◽

Zhitang Song

Keyword(s):

Inductively Coupled Plasma ◽

Etching Process ◽

Mechanism Analysis ◽

Inductively Coupled

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Enhanced Temperature Control Method Using ANFIS with FPGA

The Scientific World JOURNAL ◽

10.1155/2014/239261 ◽

2014 ◽

Vol 2014 ◽

pp. 1-8 ◽

Cited By ~ 2

Author(s):

Chiung-Wei Huang ◽

Shing-Tai Pan ◽

Jun-Tin Zhou ◽

Cheng-Yuan Chang

Keyword(s):

Temperature Control ◽

Inductively Coupled Plasma ◽

Fuzzy Inference ◽

Control Method ◽

Etching Process ◽

Inference System ◽

Inductively Coupled ◽

Field Programmable ◽

Medium Vacuum

Temperature control in etching process is important for semiconductor manufacturing technology. However, pressure variations in vacuum chamber results in a change in temperature, worsening the accuracy of the temperature of the wafer and the speed and quality of the etching process. This work develops an adaptive network-based fuzzy inference system (ANFIS) using a field-programmable gate array (FPGA) to improve the effectiveness. The proposed method adjusts every membership function to keep the temperature in the chamber stable. The improvement of the proposed algorithm is confirmed using a medium vacuum (MV) inductively-coupled plasma- (ICP-) type etcher.

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200-mm-diameter neutral beam source based on inductively coupled plasma etcher and silicon etching

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.3474977 ◽

2010 ◽

Vol 28 (5) ◽

pp. 1169-1174 ◽

Cited By ~ 10

Author(s):

Tomohiro Kubota ◽

Osamu Nukaga ◽

Shinji Ueki ◽

Masakazu Sugiyama ◽

Yoshimasa Inamoto ◽

...

Keyword(s):

Inductively Coupled Plasma ◽

Neutral Beam ◽

Silicon Etching ◽

Beam Source ◽

Inductively Coupled

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REACTION SIMULATION AND EXPERIMENT OF A Cl2/Ar INDUCTIVELY COUPLED PLASMA FOR ETCHING OF SILICON

Surface Review and Letters ◽

10.1142/s0218625x14500383 ◽

2014 ◽

Vol 21 (03) ◽

pp. 1450038 ◽

Cited By ~ 2

Author(s):

JIE GE ◽

XUAN LIU ◽

YI YANG ◽

YIXU SONG ◽

TIANLING REN

Keyword(s):

Inductively Coupled Plasma ◽

Reasonable Agreement ◽

Feature Size ◽

Manufacturing Equipment ◽

Inductively Coupled ◽

Special Profile ◽

Simulation And Experiment ◽

Scaling Down ◽

Feature Scale ◽

Trench Width

As the key feature size keeps shrinking down, inductively coupled plasma (ICP) has been widely used for etching. In this study, a commercial ICP etcher filled with Cl 2/ Ar mixture was simulated. The simulation was based on a commercial software CFD-ACE+, which is a multi-module solver. For the simulation part, CFD-ACE module was used for reactor scale and CFD-TOPO module was used for feature scale simulation. We have reached a reasonable agreement between the simulative and experimental results. Specifically, the different causes of sidewall bowing and microtrenching were discussed. We also analyzed the causes of special profile as trench width scaling down. Moreover, the agreement validates correctness of the chemistry mechanism, so it can be used as guidance for the process designing and manufacturing equipment improvement.

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