scholarly journals Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching

2020 ◽  
Author(s):  
Jing Ma ◽  
Yongqiang Zhao ◽  
Wen Liu ◽  
Fuhua Yang ◽  
Xiaodong Wang
Keyword(s):  
Inductively Coupled Plasma ◽  
Fabrication Process ◽  
Etching Process ◽  
Photon Absorption ◽  
Hydrophobic Property ◽  
Water Contact ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Fabrication And Characterization

Abstract GaAs nanostructures has attracted more and more attention due to its excellent properties such as increasing photon absorption. The fabrication process on GaAs substrate were rarely reported and most of the preparation processes are complex. Here, we reported a black GaAs fabrication process using a simple Inductively coupled plasma (ICP) etching process，with no extra lithography process. The fabricated sample has a low Reflectance value，close to zero. Besides, the black GaAs also displayed hydrophobic property, with a water contact angle (CA) of 125°. This kind of black GaAs etching process could be added to the fabrication workflow of photodetectors and solar cell devices to further improve their characteristics.

scholarly journals Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Jing Ma ◽  
Yongqiang Zhao ◽  
Wen Liu ◽  
Peishuai Song ◽  
Liangliang Yang ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Fabrication Process ◽  
Etching Process ◽  
Photon Absorption ◽  
Hydrophobic Property ◽  
Water Contact ◽  
Inductively Coupled ◽  
Icp Etching

AbstractGaAs nanostructures have attracted more and more attention due to its excellent properties such as increasing photon absorption. The fabrication process on GaAs substrate was rarely reported, and most of the preparation processes are complex. Here, we report a black GaAs fabrication process using a simple inductively coupled plasma etching process, with no extra lithography process. The fabricated sample has a low reflectance value, close to zero. Besides, the black GaAs also displayed hydrophobic property, with a water contact angle of 125°. This kind of black GaAs etching process could be added to the fabrication workflow of photodetectors and solar cell devices to further improve their characteristics.

Optimization of Fabrication Process for MEMS Based Microneedles Using ICP Etching Technology

2011 ◽  
Vol 403-408 ◽  
pp. 4611-4616 ◽  
Author(s):  
Muhammad Waseem Ashraf ◽  
Shahzadi Tayyaba ◽  
Nitin Afzulpurkar ◽  
Asim Nisar ◽  
Chumnarn Punyasai ◽  
...  
Keyword(s):  
Drug Delivery ◽  
Fluid Flow ◽  
Inductively Coupled Plasma ◽  
Hollow Structure ◽  
Fabrication Process ◽  
Fabrication Method ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Out Of Plane

In this paper, optimization of fabrication process for microneedles has been presented. Using inductively coupled plasma (ICP) etching technology, fabrication of out-of-plane hollow silicon microneedles for blood extraction has been carried out. Sharp tip microneedles with length 1100 µm were designed for fabrication. The fabrication of microneedles was not successful because the lumen section was fabricated first and then hole was created for fluid flow. Previously, using same fabrication method successful fabrication of microneedles was done for drug delivery with length 200 µm. This fabrication method is not suitable for long structure. Thus, the alternative microneedle fabrication steps using ICP etching have been developed and presented in this paper. These steps can be more optimized and suitable for sharp tip, long and hollow structure.

Characterization of the Fabrication Process of Rolled LTCC Structures

2012 ◽  
Vol 2012 (CICMT) ◽  
pp. 000251-000257
Author(s):  
Kelci Parrish ◽  
Jesse Taff ◽  
Mallory Yates ◽  
Derek Reis ◽  
Donald Plumlee
Keyword(s):  
Low Temperature ◽  
Inductively Coupled Plasma ◽  
Argon Plasma ◽  
Fabrication Process ◽  
Silver Paste ◽  
Plasma Antenna ◽  
Inductively Coupled ◽  
Single Structure ◽  
Tube Structure

This work focuses on the fabrication and assembly of cylindrical plasma containment tubes using DuPont's 951 Low Temperature Co-fired Ceramics (LTCC) for use in miniature electrostatic thrusters. The use of LTCC allows for robustness post-firing yet flexibility in the “green” un-fired state. Some of the main advantages of this flexibility include the ability to stack or roll the LTCC sheets into various shapes as well as incorporating embedded electrical interconnections using silver paste on the rolled layers. The tube is used to contain argon plasma, which is generated by a spiral Inductively Coupled Plasma antenna and is also fabricated in LTCC. The tube also interfaces with two electrically biased grids on the opposite end, which accelerate the plasma out of the tube. These interfaces are highly dependent on the dimensions and tolerances of the containment tube. The development of the fabrication process will be presented for the incorporation of the tubes onto the base as a single structure. This includes constructing the antenna base, shaping the “rolled” LTCC containment tube using a jig and isostatic press, and integrating the tube and antenna base during the firing. Following the fabrication, measurements will be taken to determine the tube circularity and the hermeticity of the seal at the interface between the tube and the antenna base. The results will be presented and characterized to evaluate the effectiveness of the structure as well as the documentation of the development of a rolled LTCC tube structure integrated with a planar LTCC antenna base.

Manufacture of High Aspect Ratio Bulk Titanium Micro-Parts by Inductively Coupled Plasma Etching

2008 ◽  
Author(s):  
Gang Zhao ◽  
Qiong Shu ◽  
Yue Li ◽  
Jing Chen
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Sidewall Roughness ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Novel Technology ◽  
Micro Parts ◽  
Etching Mask

A novel technology is developed to fabricate high aspect ratio bulk titanium micro-parts by inductively coupled plasma (ICP) etching. An optimized etching rate of 0.9 μm/min has been achieved with an aspect ratio higher than 10:1. For the first time, SU-8 is used as titanium etching mask instead of the traditional hard mask such as TiO2 or SiO2. With an effective selectivity of 3 and a spun-on thickness beyond 100 μm, vertical etching sidewall and low sidewall roughness are obtained. Ultra-deep titanium etching up to 200 μm has been realized, which is among the best of the present reports. Titanium micro-springs and planks are successfully fabricated with this approach.

Sign in / Sign up

Export Citation Format

Share Document