scholarly journals Spray Pyrolysed Nanostructured Gold-Doped Tin Oxide (Auto) Thin Films

2021 ◽  
Vol 25 (4) ◽  
pp. 567-572
Author(s):  
S.I. Akinsola ◽  
K.S. Adedayo ◽  
A.B. Alabi ◽  
D.B. Olanrewaju ◽  
A.A. Ajayi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Tin Oxide ◽  
Visible Region ◽  
Oxide Thin Film ◽  
Sno2 Thin Film ◽  
Chemical Spray Pyrolysis ◽  
Electromagnetic Spectrum

Nanostructured SnO2 thin films were grown by the chemical spray pyrolysis (CSP) method. Homemade spray pyrolysis technique is employed to prepare thin films. SnO2 is wide band gap semiconductor material whose film is deposited on glass substrate. A gold nanoparticle-doped tin oxide thin film (AuTO) was also prepared. UV-VIS (ultraviolet visible) spectroscopy and four-point probe analysis are done for optical and electrical analysis. UV-Visible absorption spectra show that the band gap of SnO2 thin film is 3.78 eV and 3.82 eV for AuTO. Band gap of SnO2 thin film can be tuned that it can be used in optical devices. The films have transmittance increases (to about 60%) and the absorbance decreases in the visible region of the electromagnetic spectrum. The electrical conductivity of the Tin Oxide is enhanced by functionalizing with the Gold nanoparticles. It is higher than that of the Tin oxide only; 0.77 x 10-2 (Ohm cm)-1 and 3.55 x 10-2 (Ohm cm)-1 for SnO2 and AuTO respectively. These properties reveal that Tin Oxide doped with gold can actually be a good material for a transparent conducting oxide to be used in photovoltaic fabrication and in electronics.

scholarly journals Structural, Morphological and Optical Characterization of SnO2:F Thin Films Prepared by Chemical Spray Pyrolysis

2013 ◽  
Vol 18 ◽  
pp. 90-102 ◽  
Author(s):  
Salam Amir Yousif ◽  
Jenan Mohamed Abass
Keyword(s):  
Spray Pyrolysis ◽  
Tin Oxide ◽  
Spray Pyrolysis Technique ◽  
Quartz Substrate ◽  
Visible Region ◽  
Ammonium Fluoride ◽  
Chemical Spray Pyrolysis ◽  
Fluorine Doping ◽  
Diffraction Patterns ◽  
D Values

Fluorine doped tin oxide (FTO) films were successfully prepared on glass and quartz substrate at a substrate temperature equal to 450 °C for different fluorine doping (0, 0.05, 0.1, 0.15) by a homemade spray pyrolysis technique. The spray solution prepared from tin tetrachloride pentahydrate (SnCl4 · 5H2O) dissolved in distilled water at (0.1 M) concentration and ammonium fluoride (NH4F) was added into the solution for fluorine doping. X-ray diffraction patterns of the spray-deposited (SnO2: F) films for different fluorine doping show that all the diffractograms contain the characteristic SnO2 orientations. The matching of the observed and standard d-values confirm that the deposited films are of tin oxide with tetragonal structure and the films are polycrystalline with (110) as a preferred growth orientation. The surface morphology of SnO2: F thin film has been examined by atomic force microscopy (AFM). The average transmittance in the visible region (at 550 nm) has been found (40%, 47%, 52%, 59%, 61%) for the fluorine doping (0, 0.05, 0.1, 0.15, 0.2) respectively.

scholarly journals Influence of Ag-Dopant on Structural Optical and Electrical Properties of Cu(1-x)AgxO Thin Films Prepared By Chemical Spray Pyrolysis Technique

2018 ◽  
Vol 4 (5) ◽  
pp. 542-545 ◽  
Author(s):  
R. Shabu ◽  
A. Moses Ezhil Raj
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Optical Band Gap ◽  
Spray Pyrolysis Technique ◽  
Precursor Solution ◽  
Oxide Semiconductor ◽  
Chemical Spray Pyrolysis ◽  
Chemical Spray Pyrolysis Technique ◽  
Chemical Spray

As major attention has been paid to transition metal oxide semiconductor suitable for solar cell, photo detector and gas sensor, present study embark on the structural, optical and electrical characterization of Ag doped CuO thin films prepared using chemical spray pyrolysis technique at the constant substrate temperature of 350 �C. For Ag doping, various concentrations of silver acetate (0.5-3.0 wt.%) was used in the sprayed precursor solution. Confirmed monoclinic lattice shows the tenorite phase formation of CuO in the pure and Ag doped films. The optical band gap of the films was in the range of 2.4 -3.4 eV. A minimum resistivity of 0.0017x103 ohmcm was achieved in the 0.5 wt.% Ag doped film, and its optical band gap was 2.74 eV.

Optoelectronic Properties of Fluorine and Cobalt Co-Doped Tin Oxide Thin Films Deposited by Chemical Spray Pyrolysis

2019 ◽  
Vol 60 ◽  
pp. 63-75 ◽  
Author(s):  
Naoual Houaidji ◽  
Mejda Ajili ◽  
Baghdadi Chouial ◽  
Najoua Turki Kamoun ◽  
Kenza Kamli ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Carrier Concentration ◽  
Tin Oxide ◽  
Hall Mobility ◽  
Spray Pyrolysis Method ◽  
Chemical Spray Pyrolysis ◽  
Glass Substrates ◽  
Chemical Spray ◽  
Co Doped

Transparent conducting Cobalt-fluorine co-doped tin oxide (SnO2: (Co, F)) thin filmswere deposited onto preheated glass substrates using the chemical spray pyrolysis method. The ([Co2+]/[Sn4+]) atomic concentration ratio (y)in the spray solution was varied between 0 and 5 at. %. The structural, electrical, optical and photoluminescence properties of these films were studied. It is found that the thin films are polycrystalline with a tetragonal crystal structure corresponding to SnO2 phase having a preferred orientation along the (200) plane. Transmission and reflection spectra reveal the presence of interference fringes indicating thickness uniformity and surface homogeneity of the deposited thin films. The electrical resistivity (ρ), volume carrier concentration density (Nv), surface carrier concentration density (Ns) and Hall mobility (μ) of the synthesized thin films were determined from the Hall Effect measurements in the Van der Paw-configuration and the following results were obtained: n-type conductivity in all deposited films, a low resistivity of 1.16×10-2 Ω.cm, and a high Hall mobility of 15.13×102 cm2.V-1.s-1with Co concentration equals to 3 at. %. These results show that the electrical properties of these thin films where greatly improved making them suitable as ohmic contact in photovoltaic application devices.

scholarly journals Highly conductive low-temperature combustion-derived transparent indium tin oxide thin film

2021 ◽  
Author(s):  
Longfei Song ◽  
Tony Schenk ◽  
Emmanuel Defay ◽  
Sebastjan Glinsek
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Film ◽  
Low Temperature Combustion ◽  
Transparent Electronics ◽  
Temperature Combustion ◽  
Ito Thin Films

Highly conductive (conductivity 620 S cm−1) and transparent ITO thin films are achieved at low temperature (350 °C) through effective combustion solution processing via multistep coating. The properties show potential for next generation flexible and transparent electronics.

scholarly journals Zinc Oxide Thin-Film Transistors Fabricated at Low Temperature by Chemical Spray Pyrolysis

2014 ◽  
Vol 43 (11) ◽  
pp. 4241-4245 ◽  
Author(s):  
Yesul Jeong ◽  
Christopher Pearson ◽  
Yong Uk Lee ◽  
Lee Winchester ◽  
Jaeeun Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Spray Pyrolysis ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Chemical Spray Pyrolysis ◽  
Zinc Oxide Thin Film ◽  
Chemical Spray

An efficient uric acid biosensor based on tin oxide thin film matrix

2013 ◽  
Vol 1530 ◽  
Author(s):  
Kashima Arora ◽  
Monika Tomar ◽  
Vinay Gupta
Keyword(s):  
Thin Film ◽  
Uric Acid ◽  
Tin Oxide ◽  
Active Sites ◽  
Oxide Thin Film ◽  
Sno2 Thin Film ◽  
Uric Acid Concentration ◽  
Selective Determination ◽  
Wide Range ◽  
Uric Acid Biosensor

ABSTRACTUric acid biosensor has been developed using tin oxide (SnO2) thin film. The electrochemistry of the developed thin film based electrode is investigated by using cyclic voltammetry. The obtained results demonstrate that the semiconducting SnO2 matrix offers a striking electrocatalytic activity to the immobilized uricase towards the oxidation of uric acid and promotes the transfer of electrons from the active sites of enzyme onto the electrode. SnO2 thin film matrix gives a high sensitivity of 0.2 mA/mM and a shelf life of 20 weeks. Moreover, SnO2 electrode exhibits excellent selectivity and outstanding analytical stability and reproducibility, which enables a reliable and selective determination of uric acid. The SnO2 based uric acid biosensor shows a linear variation in a wide range from 0 to 1.0 mM of uric acid concentration and the Michaelis Menten Constant (Km) is estimated to be 0.28 mM which indicated the high affinity of uricase towards its analyte (uric acid). The results indicate that the SnO2 thin film matrix offers a new and promising platform for the development of novel biosensors.

scholarly journals Study of Self-Patterned Zinc Tin Oxide Thin-Film Transistors Prepared from Photocurable Precursor Solution with Photoacid Generator

2021 ◽  
Vol 59 (3) ◽  
pp. 162-167
Author(s):  
Jae Young Kim ◽  
Geonoh Choe ◽  
Tae Kyu An ◽  
Yong Jin Jeong
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Precursor Solution ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Zinc Tin Oxide ◽  
Photoacid Generator

Solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs) have great potential uses in next-generation wearable and flexible electronic products. Zinc and tin precursor materials are naturally abundant and have low fabrication costs. To integrate a single ZTO TFT into logic circuits including inverters, NAND, and NOR gates will require the development of a facile patterning process to replace conventional and complicated photolithography techniques which are usually time-consuming and toxic. In this study, self-patterned ZTO thin films were prepared using a photo-patternable precursor solution including a photoacid generator, (4-methylthiophenyl)methyl phenyl sulfonium triflate. Solution-processed ZTO precursor films fabricated with the photoacid generator were successfully micropatterned by UV exposure, and transitioned to a semiconducting ZTO thin film by heat treatment. The UV-irradiated precursor films became insoluble in developing solvent as the generated proton from the photoacid generator affected the metal-containing ligand and changed the solubility of the metal oxide precursors. The resulting ZTO thin films were utilized as the active layers of n-type TFTs, which exhibited a typical n-type transfer, and output characteristics with appropriate threshold voltage, on/off current ratio, and field-effect mobility. We believe that our work provides a convenient solution-based route to the fabrication of metal-oxide semiconductor patterns.

Fabrication of Al–TiO2 Thin Film Electrode by Spray Pyrolysis Technique for Urea Sensing

2020 ◽  
Vol 20 (5) ◽  
pp. 2887-2892 ◽  
Author(s):  
A. Mathi Vathani ◽  
S. Dhanalakshmi ◽  
N. Jeyakumaran ◽  
N. Prithivikumaran
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spray Pyrolysis ◽  
Kidney Diseases ◽  
Spray Pyrolysis Technique ◽  
Anatase Phase ◽  
Visible Region ◽  
Film Electrode ◽  
Thin Film Electrode ◽  
Vis Spectroscopy

A simple cost effective Al–TiO2 thin film electrode was fabricated for urea sensing. Urea is the key end product of nitrogen metabolism in humans. Increased level of urea leads to loss of kidney function. Thus determination of urea is important in analysis of kidney diseases. Al–TiO2 thin films were deposited with different concentration of Al by Spray pyrolysis technique. The X-ray diffraction (XRD) pattern reveals the anatase phase of the Al–TiO2 thin films with tetragonal structure. A shift is observed in the XRD peak position compared to as prepared TiO2 thin film indicates the incorporation of Al ions into Ti ions. The UV-Vis spectroscopy study shows that the absorption increases and the absorption peak shifts towards the visible region for Al–TiO2 thin films compared with that of the as prepared TiO2 thin film. The optical band gap values changes with the change in the Al concentration in TiO2 thin films. The electrochemical analysis for optimized Al–TiO2 thin film electrode was carried out by cyclic voltammetry (CV) method. CV studies of Al–TiO2 thin film electrode show the good stability and linearity which is essential to fabricate biosensor. The sensor response to urea is linear with correlation coefficient of 0.944 and the sensitivity is 3.17 μA mM−1 cm−2.

Sign in / Sign up

Export Citation Format

Share Document