CREEP ACTIVATION ENERGY OF FLOW PROCESS IN Sn0.2Bi1.8Te3 SINGLE CRYSTALS

2004 ◽  
Vol 11 (04n05) ◽  
pp. 443-446
Author(s):  
P. H. SONI ◽  
C. F. DESAI ◽  
S. R. BHAVSAR
Keyword(s):  
Activation Energy ◽  
Time Dependence ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Vickers Microhardness ◽  
Indentation Creep ◽  
Flow Process ◽  
Creep Activation Energy ◽  
Temperature Range ◽  
Different Temperatures

Temperature dependence of the Vickers microhardness of Sn 0.2 Bi 1.8 Te 3 single crystals has been studied. Loading time dependence of microhardness at different temperatures has been used for creep study in the temperature range 303 K–373 K. The activation energy for indentation creep of the crystals has been evaluated.

scholarly journals Transport Phenomena In Single Crystals Tl1−XIn1−XGeXSe2 (x=0.1, 0.2)

2015 ◽  
Vol 60 (3) ◽  
pp. 2025-2028
Author(s):  
O.V. Zamurueva ◽  
G.L. Myronchuk ◽  
K. Oźga ◽  
M. Szota ◽  
A.M. El-Naggar ◽  
...  
Keyword(s):  
Activation Energy ◽  
Fermi Level ◽  
Single Crystals ◽  
Average Distance ◽  
Transport Phenomena ◽  
Localized States ◽  
Temperature Range ◽  
Temperature Dependences ◽  
Different Temperatures ◽  
Conductivity Band

Abstract Temperature dependences of electroconductivity for single crystals Tl1−xIn1−xGexSe2 were analyzed. It was established an occurrence of thermoactivated states within the temperature range 100-300 K. The conductivity is formed by delocalized carriers within the conductivity band and the jumping conductivity over the localized states which are situated in the narrow localized states near the Fermi level. Following the performed data the activation energy was evaluated with accuracy up to 0.02 eV. The density of the localized states as well as the distribution of the energy over the mentioned states was evaluated. Additionally the average distance between the localized states is evaluated at different temperatures.

scholarly journals PSEUDO-GAP FEATURES OF INTRINSIC TUNNELING IN (HgBr2)-Bi2212 SINGLE CRYSTALS

1999 ◽  
Vol 13 (29n31) ◽  
pp. 3758-3763 ◽  
Author(s):  
AUGUST YURGENS ◽  
DAG WINKLER ◽  
TORD CLAESON ◽  
SEONG-JU HWANG ◽  
JIN-HO CHOY
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Room Temperature ◽  
Unit Cell ◽  
Superconducting Gap ◽  
Axis Direction ◽  
Temperature Range ◽  
Dynamic Conductance

The c-axis tunneling properties of both pristine Bi2212 and its HgBr 2 intercalate have been measured in the temperature range 4.2-250 K. Lithographically patterned 7-10 unit-cell heigh mesa structures on the surfaces of these single crystals were investigated. Clear SIS-like tunneling curves for current applied in the c-axis direction have been observed. The dynamic conductance d I/ d V(V) shows both sharp peaks corresponding to a superconducting gap edge and a dip feature beyond the gap, followed by a wide maximum, which persists up to a room temperature. Shape of the temperature dependence of the c-axis resistance does not change after the intercalation suggesting that a coupling between CuO 2-bilayers has little effect on the pseudogap.

The Design of AlGaN/GaN HEFT-Micro-Accelerometer and Temperature- Dependence Electrical Performance

2011 ◽  
Vol 483 ◽  
pp. 174-179 ◽  
Author(s):  
Ting Liang ◽  
Jian Jun Tang ◽  
Qian Qian Zhang ◽  
Yong Wang ◽  
Jing Li ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Electrical Performance ◽  
Saturation Current ◽  
Temperature Range ◽  
Different Temperatures ◽  
Piezoresistance Coefficient ◽  
Micro Accelerometer

In this paper, We use a novel principle to detect acceleration and report how I-V characteristics and piezoresistance coefficient of AlGaN/GaN HEFT-micro-accelerometer are affected by setting different temperatures. It is shown that saturation current of device would go down if the temperature goes up, which is about 0.028mA/°C, based on the research. However, the device can work well at the temperature range of -50°C to 50°C, which indicates that it can work safely in the larger temperature range.

scholarly journals Температурная зависимость ширины запрещенной зоны монокристаллов MnAgIn-=SUB=-7-=/SUB=-S-=SUB=-12-=/SUB=-

2019 ◽  
Vol 53 (12) ◽  
pp. 1621
Author(s):  
И.В. Боднарь ◽  
Б.Т. Чан ◽  
В.Н. Павловский ◽  
И.Е. Свитенков ◽  
Г.П. Яблонский
Keyword(s):  
Experimental Data ◽  
Temperature Dependence ◽  
Band Gap ◽  
Single Crystals ◽  
Spinel Structure ◽  
Semiconductor Materials ◽  
Transmittance Spectra ◽  
Temperature Range

AbstractMnAgIn_7S_12 single crystals 16 mm in diameter and ~40 mm in length are grown by planar crystallization of the melt. It is shown that the material grown crystallizes with the formation of the cubic spinel structure. From the transmittance spectra recorded in the region of fundamental absorption in the temperature range 10–320 K, the band gap E _ g of the single crystals and its temperature dependence are determined. The dependence has a shape typical of most semiconductor materials: as the temperature is lowered, the band gap E _ g increases. A calculation is carried out, and it is shown that the calculated values are in agreement with the experimental data.

scholarly journals SYNTHESIS AND ELECTRICAL CONDUCTIVITY OF SOLID SOLUTIONS OF THE SYSTEM RbF-PbF2-SnF2

2019 ◽  
Vol 85 (5) ◽  
pp. 60-68
Author(s):  
Yuliay Pogorenko ◽  
Anatoliy Omel’chuk ◽  
Roman Pshenichny ◽  
Anton Nagornyi
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Temperature Dependence ◽  
Solid Solutions ◽  
Basic Structure ◽  
Elementary Cell ◽  
Initial Structure ◽  
Fluoride Ions ◽  
Temperature Range ◽  
Order Of Magnitude

In the system RbF–PbF2–SnF2 are formed solid solutions of the heterovalent substitution RbxPb0,86‑xSn1,14F4-x (0 < x ≤ 0,2) with structure of β–PbSnF4. At x > 0,2 on the X-ray diffractograms, in addition to the basic structure, additional peaks are recorded that do not correspond to the reflexes of the individual fluorides and can indicate the formation of a mixture of solid solutions of different composition. For single-phase solid solutions, the calculated parameters of the crystal lattice are satisfactorily described by the Vegard rule. The introduction of ions of Rb+ into the initial structure leads to an increase in the parameter a of the elementary cell from 5.967 for x = 0 to 5.970 for x = 0.20. The replacement of a part of leads ions to rubium ions an increase in electrical conductivity compared with β–PbSnF4 and Pb0.86Sn1.14F4. Insignificant substitution (up to 3.0 mol%) of ions Pb2+ at Rb+ at T<500 K per order of magnitude reduces the conductivity of the samples obtained, while the nature of its temperature dependence is similar to the temperature dependence of the conductivity of the sample β-PbSnF4. By replacing 5 mol. % of ions with Pb2+ on Rb+, the fluoride ion conductivity at T> 450 K is higher than the conductivity of the initial sample Pb0,86Sn1,14F4 and at temperatures below 450 K by an order of magnitude smaller. With further increase in the content of RbF the electrical conductivity of the samples increases throughout the temperature range, reaching the maximum values at x≥0.15 (σ573 = 0.34–0.41 S/cm, Ea = 0.16 eV and σ373 = (5.34–8.16)•10-2 S/cm, Ea = 0.48–0.51 eV, respectively). In the general case, the replacement of a part of the ions of Pb2+ with Rb+ to an increase in the electrical conductivity of the samples throughout the temperature range. The activation energy of conductivity with an increase in the content of RbF in the low-temperature region in the general case increases, and at temperatures above 400 K is inversely proportional decreasing. The nature of the dependence of the activation energy on the concentration of the heterovalent substituent and its value indicate that the conductivity of the samples obtained increases with an increase in the vacancies of fluoride ions in the structure of the solid solutions.

PHOTOELECTRIC PROPERTIES OF MnIn2S4 SINGLE CRYSTALS

2021 ◽  
Vol 88 (6) ◽  
pp. 967-969
Author(s):  
N. N. Niftiyev
Keyword(s):  
Activation Energy ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Spectral Distribution ◽  
Photoconductivity Spectrum ◽  
Intracenter Transition ◽  
Photoelectric Properties ◽  
Impurity Photoconductivity ◽  
Donor Defect

The spectral distribution of the photoconductivity and the temperature dependence of the photocurrent of MnIn2S4 single crystals are investigated. The intrinsic, impurity photoconductivity and a maximum at an energy of 2.69 eV, which is associated with the intracenter transition of Mn2+ ions (6A1→4A1), are revealed in the photoconductivity spectrum. The region of the wavelengths of 600–1000 nm appears with an excess of manganese in the crystals and is caused by a donor defect. At temperatures of 80—145 K, the increase in the photocurrent is associated with the thermal depletion of the adhesion levels. The activation energy of the adhesion levels is determined.

Plastic Deformations in L10-Ordered Single Crystals with their c/a Ratios Less than Unity

2007 ◽  
Vol 561-565 ◽  
pp. 459-462
Author(s):  
Katsushi Tanaka ◽  
Hiromitsu Ide ◽  
Yoshinori Sumi ◽  
Kyosuke Kishida ◽  
Haruyuki Inui
Keyword(s):  
Shear Stress ◽  
Temperature Dependence ◽  
Single Crystals ◽  
Room Temperature ◽  
The Other ◽  
Compressive Deformation ◽  
Positive Temperature ◽  
Plastic Deformations ◽  
Temperature Range ◽  
Critical Resolved Shear Stress

Compressive deformation of L10-ordered single crystals of FePd whose c/a ratio less than unity have been investigated from room temperature to 823 K. The results show that the critical resolved shear stress (CRSS) for octahedral glide of ordinary dislocations is smaller than that of super-lattice dislocations in all the temperature range investigated, that is the opposite sense to the case of Ti-56 mol% Al. The CRSS for ordinary dislocations virtually independent to the temperature. On the other hand, the CRSS for super dislocations exhibits a weak positive temperature dependence from room temperature up to 573 K and decreases in higher temperatures.

Interface Controlled Diffusional Creep of Cu + 2.8 at.% Co Solid Solution

2012 ◽  
Vol 322 ◽  
pp. 33-39 ◽  
Author(s):  
Sergei Zhevnenko ◽  
Eugene Gershman
Keyword(s):  
Activation Energy ◽  
Solid Solution ◽  
Surface Tension ◽  
High Temperature ◽  
Creep Behavior ◽  
Pure Copper ◽  
Diffusional Creep ◽  
High Temperature Creep ◽  
Temperature Range ◽  
Different Temperatures

High-temperature creep experiments were performed on a Cu-2.8 ат.% Co solid solution. Cylindrical foils of 18 micrometers thickness were used for this purpose. Creep tests were performed in a hydrogen atmosphere in the temperature range of about from 1233 K to 1343 K and at stresses lower than 0.25 MPa. For comparison, a foil of pure copper and Cu-20 at.% Ni solid solution were investigated on high temperature creep. Measurements on the Cu foil showed classical diffusional creep behavior. The activation energy of creep was defined and turned out to be equal 203 kJ/mol, which is close to the activation energy of bulk self-diffusion of copper. There was a significant increase in activation energy for the Cu-20 at.% Ni solid solution. Its activation energy was about 273 kJ/mol. The creep behavior of Cu-Co solid solution was more complicated. There were two stages of diffusional creep at different temperatures. The extremely large activation energy (about 480 kJ/mol) was determined at relatively low temperature and a small activation energy (about 105 kJ/mol) was found at high temperatures. The creep rate of Cu-Co solid solution was lower than that of pure copper at all temperatures. In addition, the free surface tension of Cu-2.8 ат.% Co was measured at different temperatures from 1242 K to 1352 K. The surface tension increases in this temperature range from 1.6 N/m to 1.75 N/m. There were no features on the temperature dependence of the surface tension.

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