A two-dimensional hexagonal boron nitride/polymer nanocomposite for flexible resistive switching devices

Abstract The two-dimensional hexagonal boron nitride (h-BN) has been used as resistive switching (RS) material for memory due to its insulation, good thermal conductivity and excellent thermal/chemical stability. A typical h-BN based RS memory employs a Metal-Insulator-Metal (MIM) vertical structure, in which metal ions pass through the h-BN layers to realize the transition from high resistance state (HRS) to low resistance state (LRS). Alternatively, just like the horizontal structure widely used in the traditional MOS capacitor based memory, the performance of in-plane h-BN memory should also be evaluated to determine its potential applications. As consequence, a horizontal structured resistive memory has been designed in this work by forming freestanding h-BN across Ag nanogap, where the two-dimensional h-BN favored in-plane transport of metal ions to emphasize the RS behavior. As a result, the memory devices showed switching slope down to 0.25 mV/dec, ON/OFF ratio up to 1E8, SET current down to pA and SET voltage down to 180 mV.

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Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices

2D Materials ◽

10.1088/2053-1583/aa7129 ◽

2017 ◽

Vol 4 (2) ◽

pp. 025099 ◽

Cited By ~ 22

Author(s):

Chengbin Pan ◽

Enrique Miranda ◽

Marco A Villena ◽

Na Xiao ◽

Xu Jing ◽

...

Keyword(s):

Boron Nitride ◽

Resistive Switching ◽

Hexagonal Boron Nitride ◽

Switching Devices

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High-energy proton irradiation damage on two-dimensional hexagonal boron nitride

RSC Advances ◽

10.1039/c9ra03121a ◽

2019 ◽

Vol 9 (32) ◽

pp. 18326-18332

Author(s):

Dongryul Lee ◽

Sanghyuk Yoo ◽

Jinho Bae ◽

Hyunik Park ◽

Keonwook Kang ◽

...

Keyword(s):

Boron Nitride ◽

Proton Irradiation ◽

Electronic Device ◽

Hexagonal Boron Nitride ◽

High Energy ◽

Irradiation Damage ◽

Two Dimensional ◽

High Energy Proton ◽

Energy Proton ◽

Induced Defects

The dielectric layer, which is an essential building block in electronic device circuitry, is subject to intrinsic or induced defects that limit its performance.

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Synthesis of large-area multilayer hexagonal boron nitride sheets on iron substrates and its use in resistive switching devices

2D Materials ◽

10.1088/2053-1583/aac615 ◽

2018 ◽

Vol 5 (3) ◽

pp. 031011 ◽

Cited By ~ 21

Author(s):

Fei Hui ◽

Marco A Villena ◽

Wenjing Fang ◽

Ang-Yu Lu ◽

Jing Kong ◽

...

Keyword(s):

Boron Nitride ◽

Resistive Switching ◽

Hexagonal Boron Nitride ◽

Large Area ◽

Switching Devices

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High Photoresponse Black Phosphorus TFTs Capping with Transparent Hexagonal Boron Nitride

Membranes ◽

10.3390/membranes11120952 ◽

2021 ◽

Vol 11 (12) ◽

pp. 952

Author(s):

Dewu Yue ◽

Ximing Rong ◽

Shun Han ◽

Peijiang Cao ◽

Yuxiang Zeng ◽

...

Keyword(s):

Boron Nitride ◽

Electron Mobility ◽

Hexagonal Boron Nitride ◽

Black Phosphorus ◽

Two Dimensional ◽

Critical Material ◽

Device Applications ◽

Uv Visible ◽

Spectral Ranges ◽

Very High

Black phosphorus (BP), a single elemental two-dimensional (2D) material with a sizable band gap, meets several critical material requirements in the development of future nanoelectronic applications. This work reports the ambipolar characteristics of few-layer BP, induced using 2D transparent hexagonal boron nitride (h-BN) capping. The 2D h-BN capping have several advantages over conventional Al2O3 capping in flexible and transparent 2D device applications. The h-BN capping technique was used to achieve an electron mobility in the BP devices of 73 cm2V−1s−1, thereby demonstrating n-type behavior. The ambipolar BP devices exhibited ultrafast photodetector behavior with a very high photoresponsivity of 1980 mA/W over the ultraviolet (UV), visible, and infrared (IR) spectral ranges. The h-BN capping process offers a feasible approach to fabricating n-type behavior BP semiconductors and high photoresponse BP photodetectors.

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