Electrical and Diffusion Processes in the Adhesion of Two Polymers

1960 ◽  
Vol 33 (1) ◽  
pp. 240-244 ◽  
Author(s):  
L. P. Morozova ◽  
B. A. Krotova
Keyword(s):  
Diffusion Processes ◽  
Adhesive Bond ◽  
Time Interval ◽  
Experimental Conditions ◽  
Cellulose Esters ◽  
Adhesive Bonds ◽  
Vinyl Polymers ◽  
And Diffusion ◽  
Glass Metal

Abstract In previous publications one of us developed the concept of the electrical theory of adhesion. On the other hand, many authors have repeatedly expressed opinions concerning the role of diffusion processes during the formation of adhesive and auto-adhesive bonds. Owing to the discussion of this problem an experimental investigation of the formation of adhesive bonds acquired special significance, in particular during the addition of two high molecular materials for the purpose of clarifying the correlation of electrical and diffusion processes in the phenomena of adhesion. The shape of the adhesiogram is very significant in solving the question of the type of adhesive bond. The effect of the velocity of rupture is comparatively small if the adhesive bond depended on the phenomenon of diffusion. If the adhesive bond is of electrical nature the adhesiogram has generally three clearly expressed sections. With the aid of a roller adhesiometer we have taken the adhesiograms of a series of polymers (gum type BF, polyurethans, polyamides, a series of vinyl polymers, rubbers, guttapercha, cellulose esters, and on.). The adhesiograms of different combinations of these polymers with glass, metal and with rubbers of a Na butadiene and acrylo nitrile rubber base usually gave three clearly expressed regions. However, in some cases there were only two sections and the third was absent. Three probably exist in all but some may be located in an area of significant velocity and experimental determination becomes difficult. Under our experimental conditions of a time interval <0.01 sec some could not be measured.

Effect of cluster-gradient architecture of nanostructured topocomposites on features of tribointeraction with heterophased material

2020 ◽  
pp. 130-135
Author(s):  
D.N. Korotaev ◽  
K.N. Poleshchenko ◽  
E.N. Eremin ◽  
E.E. Tarasov
Keyword(s):  
Wear Resistance ◽  
Titanium Alloy ◽  
Energy Dissipation ◽  
Phase Structure ◽  
Diffusion Processes ◽  
Structural Phase ◽  
High Wear Resistance ◽  
Wear Characteristics ◽  
And Diffusion

The wear resistance and wear characteristics of cluster-gradient architecture (CGA) nanostructured topocomposites are studied. The specifics of tribocontact interaction under microcutting conditions is considered. The reasons for retention of high wear resistance of this class of nanostructured topocomposites are studied. The mechanisms of energy dissipation from the tribocontact zone, due to the nanogeometry and the structural-phase structure of CGA topocomposites are analyzed. The role of triboactivated deformation and diffusion processes in providing increased wear resistance of carbide-based topocomposites is shown. They are tested under the conditions of blade processing of heat-resistant titanium alloy.

scholarly journals In situ X-ray tomography densification of firn: The role of mechanics and diffusion processes

2019 ◽  
Vol 167 ◽  
pp. 210-220 ◽  
Author(s):  
Alexis Burr ◽  
Pierre Lhuissier ◽  
Christophe L. Martin ◽  
Armelle Philip
Keyword(s):  
Diffusion Processes ◽  
X Ray ◽  
And Diffusion

In Situ X-Ray Tomography Densification of Firn: Decoupling the Role of Mechanics and Diffusion Processes

2018 ◽  
Author(s):  
Alexis Burr ◽  
Pierre Lhuissier ◽  
Christophe L. Martin ◽  
Armelle Philip
Keyword(s):  
Diffusion Processes ◽  
X Ray ◽  
And Diffusion

Diffusion Barrier Reliability with Respect to the Role of Tin Stoichiometry Between Al Metallization and Si Substrate

1996 ◽  
Vol 441 ◽  
Author(s):  
Han-Yu Tseng ◽  
Aris Christou ◽  
Dan Young ◽  
Ted Tessner ◽  
Jon Orloff
Keyword(s):  
Diffusion Barrier ◽  
Diffusion Processes ◽  
Depth Profiling ◽  
X Ray Diffraction ◽  
Tin Films ◽  
Al Metallization ◽  
High Degree ◽  
Tin Diffusion Barrier ◽  
And Diffusion

AbstractIn this study, the relation between interdiffusion in Al/ TiN thin film couples and diffusion barrier stability has been investigated. The TiN diffusion barrier was deposited by reactive sputtering in an Ar-N2 gas mixture. The stoichiometry of TiN was achieved by varying the nitrogen-to-argon ratio in the sputtering gas. Interdiffiusion occurred after annealing for 30 minutes at 475°C and 575°C. Diffusion processes and interfacial reactions with respect to TiN stoichiometry were investigated via Auger Electron Spectroscopy (AES) depth profiling and X-ray diffraction (XRD). The barrier reliability with respect to the stoichiometry changes was established; nitrogen-deficient TiN films result in a high degree of interdiffiusion and decomposition at annealing temperatures of 475°C and 575°C. AI3Ti and AlN intermetallic compounds were formed at the interfaces. The sheet resistance of Al films was measured by four-point probe method. Resistance increases for all the annealed films were due to interdiffusion between Al and TiN. The degree of interdiffusion was analyzed by using AES and XRD.

Diffusion of Innovation and Role of Opinion Leaders

2018 ◽  
pp. 83-93
Author(s):  
Dayane Gabriele Alves Silveira
Keyword(s):  
Diffusion Of Innovation ◽  
Decision Process ◽  
Diffusion Processes ◽  
Opinion Leaders ◽  
Innovation Networks ◽  
Factors Affecting ◽  
New Strategy ◽  
Micro Level ◽  
And Diffusion

The purposes of this study were: (1) examine the literature about innovation diffusion; (2) conduct a literature review on the innovation-decision process; (3) identify factors affecting the success of an innovation; (4) to determine a new strategy for diffusion of innovation. A structured search of the internet was undertaken to identify and appraise direct relationship between opinion leaders and diffusion of innovation. Models for describing the pattern of the diffusion processes for innovations are used by researchers. The present study went beyond the global structure of network to understand the actual position of the actors within the innovation networks. To do this, a strategy was needed that went to understand from the macro to the micro level, and then returned to the macro level to explain the structure of the authorship in innovation networks.

Metamorphic reaction rate laws and development of isograds

1986 ◽  
Vol 50 (357) ◽  
pp. 359-373 ◽  
Author(s):  
Antonio C. Lasaga
Keyword(s):  
Diffusion Processes ◽  
Relative Role ◽  
Mineral Surfaces ◽  
Surface Kinetics ◽  
Rate Laws ◽  
Careful Treatment ◽  
Reaction Zones ◽  
Kinetics Of ◽  
And Diffusion

AbstractNew data on the kinetics of dehydration of muscovite + quartz suggest the necessity for a careful treatment of both surface kinetics and diffusion processes in metamorphic reactions. A new model is proposed that illustrates the relative role of diffusion and surface reactions in the overall metamorphic process. The rate law for the reaction at mineral surfaces derived from the experimental data is shown to be probably non-linear and similar to rate laws derived from Monte Carlo calculations. The experimental rate data is then used in a heat flow calculation to model the evolution of the muscovite isograd in the field. The position of the isograd, the temperature oversteps above equilibrium, and the width of ‘reaction zones’ are then analysed as a function of intrusion size and kinetic parameters.

Diffusion-Proofing

2020 ◽  
pp. 87-114
Author(s):  
Karrie J. Koesel ◽  
Valerie J. Bunce
Keyword(s):  
Diffusion Processes ◽  
The Other ◽  
Arab Uprisings ◽  
Color Revolutions ◽  
Authoritarian Politics ◽  
And Diffusion ◽  
Cross National

Do authoritarian leaders take preemptive actions to deter their citizens from joining cross-national waves of popular mobilizations against authoritarian rulers? Are they more likely to engage in such behavior when these uprisings appear to be more threatening—in particular, when they take place in neighboring countries and in regimes that resemble their own? This chapter provides answers to these questions by comparing the responses of the Russian and Chinese leaderships to two such waves: the color revolutions and the Arab uprisings. It concludes that despite differences in the ostensible threats posed by these two waves, they nonetheless prompted the leaders of both of these countries to introduce similar preemptive measures in order to “diffusion-proof” their rule against the color revolutions and the Arab upheavals. These findings have some important implications for an understanding of authoritarian politics and diffusion processes. One is to reinforce the emphasis in many recent studies on the strategic foundations of authoritarian resilience. That recognized, however, this chapter adds that the authoritarian tool kit needs to be expanded to include policies that preempt international threats as well as domestic ones. The other is to provide further confirmation, in this case derived from the behavior of authoritarian rulers, of how scholars have understood the drivers of cross-national diffusion. At the same time, however, students of diffusion should pay more attention to the role of resisters, as well as to adopters. In this sense, the geographical reach of diffusion is much broader than many analysts have recognized

Intrinsic Point Defects and Diffusion Processes in Silicon

1983 ◽  
Vol 31 ◽  
Author(s):  
T. Y. Tan
Keyword(s):  
Point Defects ◽  
Thermal Equilibrium ◽  
Diffusion Processes ◽  
Equilibrium Concentration ◽  
Surface Oxidation ◽  
Self Diffusion ◽  
Equilibrium Concentrations ◽  
And Diffusion

ABSTRACTThis paper reviews recent progress in understanding the role of vacancies (V) and self-interstitials (I) in self and impurity diffusion in Si. Surface oxidation perturbs the thermal equilibrium concentration of point defects and analyses of the resulting effects on dopant diffusion showed that both V and I are present. Developments in experimental and theoretical works on Au diffusion in Si yielded a determination of the I-component and an estimate of the V-component of the Si self-diffusion coefficient. It is hoped that the I and V thermal equilibrium concentrations may be determined in the near future.A number of important physical aspects of the anomalous diffusion of P are now understood but a basically satisfactory model may need further work.

Surface Photovoltage Monitoring of Silicon Surface Native and Chemical Oxides following Wafer Cleaning and Rinsing Operations

1995 ◽  
Vol 386 ◽  
Author(s):  
John J. Rosato ◽  
R. Mark Hall ◽  
Thad B. Parry ◽  
Paul G. Lindquist ◽  
Taura D. Jarvis
Keyword(s):  
Surface Charge ◽  
Surface Passivation ◽  
Diffusion Processes ◽  
Indirect Measurement ◽  
Surface Photovoltage ◽  
Contamination Level ◽  
Chemical Cleaning ◽  
Wafer Cleaning ◽  
And Diffusion

ABSTRACTWe report on the use of the Surface PhotoVoltage (SPV) technique to monitor the Si surface bonding arrangement, and the impurity metallic contamination level prior to critical diffusion processes via the indirect measurement of surface charge and diffusion length, respectively. We show that the effectiveness of the pre-diffusion wet chemical cleaning and rinsing sequences can be accurately monitored via the real-time, nondestructive SPV measurement. In particular the nature of the surface passivation/chemical oxide formed during the cleaning and rinsing operations can be monitored by quantitative surface charge measurements. The importance of the prior wafer history is highlighted, as is the role of the Si starting material and measurement parameters.

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