scholarly journals Thermal Oxidation of Thin Film of Unsaturated Triacylglycerols. I.

1992 ◽  
Vol 41 (5) ◽  
pp. 397-403
Author(s):  
Kyo TAKAOKA ◽  
Masahisa TAKASAGO ◽  
Koichi KOBAYASHI ◽  
Yasunori TARU ◽  
Shusaku NISHIYAMA
Keyword(s):  
Thin Film ◽  
Thermal Oxidation

Polysilicon Thin Film Transistors

1990 ◽  
Vol 182 ◽  
Author(s):  
Ichio Yudasaka ◽  
Hiroyuki Ohshima
Keyword(s):  
Thin Film ◽  
Thermal Oxidation ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Practical Applications ◽  
Polysilicon Film ◽  
Alternative Technologies ◽  
Low Temperature Processing

AbstractPolysilicon thin film transistors are now in mass production. Key factors of the success are thinner polysilicon film and thermal oxidation. Practical applications of polysilicon thin film transistors have been limited, however, because of high temperature processing. Alternative technologies to thermal oxidation are very low pressure deposition, solid-phase crystallization, laser-annealing and hydrogenation. These technologies are compatible with low temperature processing and will contribute to the advance of polysilicon thin film transistors in the future.

Thermal oxidation and nitridation of sputtered Zr thin film on Si via N2O gas

2011 ◽  
Vol 509 (35) ◽  
pp. 8728-8737 ◽  
Author(s):  
Yew Hoong Wong ◽  
Kuan Yew Cheong
Keyword(s):  
Thin Film ◽  
Thermal Oxidation

Kinetics of Rapid Thermal Oxidation : Critical Analysis of Experimental Results

1989 ◽  
Vol 146 ◽  
Author(s):  
J-M. Dilhac
Keyword(s):  
Thin Film ◽  
Thermal Oxidation ◽  
Critical Analysis ◽  
Film Growth ◽  
Oxide Thickness ◽  
Temperature Sensors ◽  
Experimental Results ◽  
Thin Film Growth ◽  
Experimental Kinetics ◽  
Kinetics Of

ABSTRACTIn this paper, we present experimental kinetics data from the literature, and the large discrepancies between them is discussed. An analytical equation for oxide thickness vs. oxidation time and temperature, adequatly describing thin film growth, is used to estimate the temperature error likely to explain the discrepancy between the above data. We also assess this error by considering the temperature sensors.

Morphology and Electrical Properties of Pure and Ti-Doped Gas-Sensitive Ga2O3 Film Prepared by Rheotaxial Growth and Thermal Oxidation

2004 ◽  
Vol 19 (4) ◽  
pp. 1105-1117 ◽  
Author(s):  
Chin-Cheng Chen ◽  
Chiu-Chen Chen
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Electrical Properties ◽  
Response Time ◽  
Thermal Oxidation ◽  
Recovery Time ◽  
Dopant Concentration ◽  
Growth Technique ◽  
Nanowires Growth ◽  
Prolonged Recovery

An n-type Ga2O3 semiconductor thin film was prepared by rheotaxial growth and thermal oxidation (RGTO) method on SiO2 and Al2O3 substrates. Multilayer growth technique was used to control grain size. The morphology and the electrical properties of the Ga and Ga2O3 films were measured as functions of thickness, temperature, and Ti dopant concentration. Measurements of the sensitivity, the response time, and the recovery time of the Ga2O3 films in response to ethanol and CO were carried out.The results showed that the grain size of Ga film increased with thickness, and a balls-on-ball type morphology was produced as the film exceeded 3000 Å. Ga2O3 nanowires were created when Ga films were oxidized under impure O2 atmosphere. Ga2O3 films had an optimum sensing temperature increasing from 625 °C for a5012 Å film to 675 °C for a 5.6-μm film. The films prepared by multilayer growth technique had smaller grain size, but the sensitivity remained unchanged. The films deposited on SiO2 substrate had a sensitivity higher by 28% than that on Al2O3. Doping of 0.28 at.% Ti enhanced nanowires growth, raised sensitivity by 6%, shortened response time from 40 to 30 s, but prolonged recovery time from 92 to130 s. Formation of nanowires resulted in an increase of sensitivity up to 50%.Doping of 2.18 at.% Ti led to the formation of nanoribbons with a sensitivity lowerby 8% and a recovery time shortened from 130 to 72 s. The RGTO method was shown to produce Ga2O3 gas-sensitive thin film with good reproducibility.

scholarly journals Effect of Halogen Doping on Optical Properties for ZnO Thin Film Prepared by Thermal Oxidation

2015 ◽  
Vol 61 ◽  
pp. 149-161
Author(s):  
Wael Abdullah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Thermal Oxidation ◽  
Zinc Acetate Dihydrate ◽  
Precursor Solution ◽  
Zno Thin Film ◽  
Oxide Thin Films ◽  
Glass Substrates

Undoped and halogen-doped zinc oxide thin films are prepared by the thermal oxidation process. Zinc acetate dihydrate, ethanol, and Diethanolamine are used as precursor, solvent, and stabilizer, respectively. In the case of ZnO:Hal. dopant Ammonium chloride NH4Cl 99%, Benzene Bromide C6H5Br, or Benzene Iodide C6H5I for making dopant ZnO thin film with Cl, Br, I respectively is added to the precursor solution with an atomic percentage equal to 2-10.% hal. The transparent solution sprayed onto glass substrates, and are transformed into ZnO upon annealing at 500°C. XRD spectra of ZnO thin films, and optical properties of them as a function of halogen content have been investigated using U.V spectroscopy ( transmittance , refractive index, extinction coefficient and energy band gap ) for undoped and halogen-doped zinc oxide thin films.

scholarly journals Thermal Oxidation of the Thin Film of Trilinolenoylglycerol on Metal Plates

1993 ◽  
Vol 42 (1) ◽  
pp. 36-43
Author(s):  
Kyo TAKAOKA ◽  
Koichi KOBAYASHI ◽  
Masahisa TAKASAGO ◽  
Yasunori TARU
Keyword(s):  
Thin Film ◽  
Thermal Oxidation ◽  
Metal Plates
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