scholarly journals One-Dimensional Metal Oxide Nanostructures for Chemical Sensors

2021 ◽  
Author(s):  
Esther Hontañón ◽  
Stella Vallejos
Keyword(s):  
Metal Oxide ◽  
Chemical Sensors ◽  
Large Scale ◽  
Low Cost ◽  
Cost Effective ◽  
Oxide Semiconductor ◽  
One Dimensional ◽  
Metal Oxide Nanostructures ◽  
Art Research ◽  
A Charge

The fabrication of chemical sensors based on one-dimensional (1D) metal oxide semiconductor (MOS) nanostructures with tailored geometries has rapidly advanced in the last two decades. Chemical sensitive 1D MOS nanostructures are usually configured as resistors whose conduction is altered by a charge-transfer process or as field-effect transistors (FET) whose properties are controlled by applying appropriate potentials to the gate. This chapter reviews the state-of-the-art research on chemical sensors based on 1D MOS nanostructures of the resistive and FET types. The chapter begins with a survey of the MOS and their 1D nanostructures with the greatest potential for use in the next generation of chemical sensors, which will be of very small size, low-power consumption, low-cost, and superior sensing performance compared to present chemical sensors on the market. There follows a description of the 1D MOS nanostructures, including composite and hybrid structures, and their synthesis techniques. And subsequently a presentation of the architectures of the current resistive and FET sensors, and the methods to integrate the 1D MOS nanostructures into them on a large scale and in a cost-effective manner. The chapter concludes with an outlook of the challenges facing the chemical sensors based on 1D MOS nanostructures if their massive use in sensor networks becomes a reality.

Development of All-Plastic Microvalve Array for Multiplexed Immunoassay

2014 ◽  
Author(s):  
Shancy Augustine ◽  
Pan Gu ◽  
Xiangjun Zheng ◽  
Toshikazu Nishida ◽  
Z. Hugh Fan
Keyword(s):  
Large Scale ◽  
Low Cost ◽  
Simultaneous Detection ◽  
Cost Effective ◽  
Negative Control ◽  
Sensitive Material ◽  
Detection Scheme ◽  
Power Battery ◽  
Multiple Analytes ◽  
Multiplexed Immunoassay

There is a need for low-cost immunoassays that measure the presence and concentration of multiple harmful agents in one device. Currently, comparable immunoassays employ a one-analyte-per-test format that is time consuming and not cost effective for the requirement of detecting multiple analytes in a single sample. For instance, if a spectrum of harmful agents, including E. coli O157, cholera toxin, and Salmonella typhimurium, should be simultaneously monitored in foods and drinking water, then a one-analyte-per-test would be inefficient. This work demonstrates a platform capable of simultaneous detection of multiple analytes in a single, low-cost, microvalve array-enabled multiplexed immunoassay. This multiplexed immunoassay platform is demonstrated in a prototype COC (cyclic olefin copolymer) device with a 2×3 array in which 6 analytes can be detected simultaneously. In order to contain and regulate the flow of reagents in the multichannel device, an array of microfluidic valves actuated by a thermally expandable material and microfabricated resistors have been developed to direct the flow to the necessary assay sites. The microvalve-based immunoassay is shown to be reliable, easy to operate, and compatible with large-scale integration. The all-plastic microvalves use paraffin wax as the thermally sensitive material which drastically reduces power consumption by latching upon closing so that pulsed power is required only to close and latch the microvalve until it is necessary to re-open the valve. The multiplexed detection scheme has been demonstrated by using three proteins, C reactive protein (CRP) and transferrin, both of which are biomarkers associated with traumatic brain injury (TBI) as well as bovine serum albumin (BSA) as the negative control. Since there are no external bulky pneumatic accessories required to operate/latch the microvalves in the device, this compact, thermally actuated and latching microvalve-enabled multiplexed immunoassay has the potential to realize a portable, low power, battery operated microfluidic device for biological assays.

scholarly journals Process Design Kit and Design Automation for Flexible Hybrid Electronics

2019 ◽  
Vol 16 (3) ◽  
pp. 117-123
Author(s):  
Tsung-Ching Huang ◽  
Ting Lei ◽  
Leilai Shao ◽  
Sridhar Sivapurapu ◽  
Madhavan Swaminathan ◽  
...  
Keyword(s):  
Process Design ◽  
Design Automation ◽  
High Performance ◽  
Large Scale ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Oxide Semiconductor ◽  
Wearable Electronics ◽  
Wide Range

Abstract High-performance low-cost flexible hybrid electronics (FHE) are desirable for applications such as internet of things and wearable electronics. Carbon nanotube (CNT) thin-film transistor (TFT) is a promising candidate for high-performance FHE because of its high carrier mobility, superior mechanical flexibility, and material compatibility with low-cost printing and solution processes. Flexible sensors and peripheral CNT-TFT circuits, such as decoders, drivers, and sense amplifiers, can be printed and hybrid-integrated with thinned (<50 μm) silicon chips on soft, thin, and flexible substrates for a wide range of applications, from flexible displays to wearable medical devices. Here, we report (1) a process design kit (PDK) to enable FHE design automation for large-scale FHE circuits and (2) solution process-proven intellectual property blocks for TFT circuits design, including Pseudo-Complementary Metal-Oxide-Semiconductor (Pseudo-CMOS) flexible digital logic and analog amplifiers. The FHE-PDK is fully compatible with popular silicon design tools for design and simulation of hybrid-integrated flexible circuits.

The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface

MRS Bulletin ◽  
1996 ◽  
Vol 21 (4) ◽  
pp. 38-44 ◽  
Author(s):  
F.K. LeGoues
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Rule ◽  
Strained Si

Recently much interest has been devoted to Si-based heteroepitaxy, and in particular, to the SiGe/Si system. This is mostly for economical reasons: Si-based technology is much more advanced, is widely available, and is cheaper than GaAs-based technology. SiGe opens the door to the exciting (and lucrative) area of Si-based high-performance devices, although optical applications are still limited to GaAs-based technology. Strained SiGe layers form the base of heterojunction bipolar transistors (HBTs), which are currently used in commercial high-speed analogue applications. They promise to be low-cost compared to their GaAs counterparts and give comparable performance in the 2-20-GHz regime. More recently we have started to investigate the use of relaxed SiGe layers, which opens the door to a wider range of application and to the use of SiGe in complementary metal oxide semiconductor (CMOS) devices, which comprise strained Si and SiGe layers. Some recent successes include record-breaking low-temperature electron mobility in modulation-doped layers where the mobility was found to be up to 50 times better than standard Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Even more recently, SiGe-basedp-type MOSFETS were built with oscillation frequency of up to 50 GHz, which is a new record, in anyp-type material for the same design rule.

One-dimensional metal oxide nanostructures for heterogeneous catalysis

Nanoscale ◽  
2013 ◽  
Vol 5 (16) ◽  
pp. 7175 ◽  
Author(s):  
Qian Zhang ◽  
Hsin-Yi Wang ◽  
Xinli Jia ◽  
Bin Liu ◽  
Yanhui Yang
Keyword(s):  
Heterogeneous Catalysis ◽  
Metal Oxide ◽  
One Dimensional ◽  
Oxide Nanostructures ◽  
Metal Oxide Nanostructures

Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 812-817 ◽  
Author(s):  
Manabu Itsumi ◽  
Hideo Akiya ◽  
Takemi Ueki ◽  
Masato Tomita ◽  
Masataka Yamawaki
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
Large Scale ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Oxide Defects

Performance of rapid diagnostic tests for HCV infection in serum or plasma

2021 ◽  
Author(s):  
Stéphane Chevaliez ◽  
Françoise Roudot-Thoraval ◽  
Christophe Hézode ◽  
Jean-Michel Pawlotsky ◽  
Richard Njouom
Keyword(s):  
Hepatitis C ◽  
Diagnostic Tests ◽  
Large Scale ◽  
Low Cost ◽  
Antibody Test ◽  
Cost Effective ◽  
Rapid Diagnostic Tests ◽  
Treatment Programs ◽  
Clinical Sensitivity ◽  
Cost Treatment

Aim: HCV diagnosis will become the bottleneck in eliminating hepatitis C. Simple, accurate and cost-effective testing strategies are urgently needed to improve hepatitis C screening and diagnosis. Materials & methods: Performance of seven rapid diagnostic tests (RDT) have been assessed in a large series (n = 498) of serum or plasma specimens collected in France and in Cameroon. Results: Specificity varied from 96.1 to 100%. The clinical sensitivity, compared with immunoassays as the reference, was high for all seven RDT (97.2–100%). The Multisure HCV antibody assay and OraQuick HCV rapid antibody test reached sensitivity ≥99%. Conclusion: A number of RDT may be suitable for WHO prequalification and may be implemented in the framework of large-scale low-cost treatment programs to achieve the WHO viral hepatitis objectives by 2030.

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