scholarly journals Tunable Zeroth-Order Resonator Based on Ferroelectric Materials

2021 ◽  
Author(s):  
Mohamed M. Mansour ◽  
Haruichi Kanaya
Keyword(s):  
Thin Film ◽  
Microelectromechanical Systems ◽  
Dynamic Range ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Materials ◽  
Ferroelectric Film ◽  
Zeroth Order ◽  
Microwave Components ◽  
Full Wave Analysis ◽  
Tunable Device

Tunable microwave devices have the benefits of added functionality, smaller form factor, lower cost, and lightweight, and are in great demand for future communications and radar applications as they can extend the operation over a wide dynamic range. Current tunable technologies include several schemes such as ferrites, semiconductors, microelectromechanical systems (MEMS), and ferroelectric thin films. While each technology has its own pros and cons, ferroelectric thin film-based technology has proved itself as the potential candidate for tunable devices due to its simple processes, low power consumption, high power handling, small size, and fast tuning. A tunable Composite Right Left-Handed Zeroth Order Resonator (CRLH ZOR) is introduced in this chapter and it relies mainly on the latest advancement in the ferroelectric materials. It is common that for achieving optimum performance for the resonant structure, this involves the incorporation of an additional tuning by either mechanical means (i.e. with tuning screws) or other coupling mechanisms. The integration between electronic tuning and High-Temperature Superconducting (HTS) components yields a high system performance without degradation of efficiency. This leads not only low-loss microwave components that could be fine-tuned for maximum efficiency but will provide a tunable device over a broadband frequency spectrum as well. The dielectric properties of the ferroelectric thin film, and the thickness of the ferroelectric film, play a fundamental role in the frequency or phase tunability and the overall insertion loss of the circuit. The key advantages of using ferroelectric are the potential for significant size-reduction of the microwave components and systems and the cabibility for integration with microelectronic circuits due to the utilization of thin and thick ferroelectric film technology. In this chapter, ZOR is discussed and the conceptual operation is introduced. The ZOR is designed and simulated by the full-wave analysis software. The response is studied using electromagnetic characteristics with the applied electric field, ferroelectric thickness, and the operating temperature.

THIN FILM FERROELECTRIC TUNABLE ZEROTH-ORDER RESONATOR BASED ON CRLH METAMATERIALS

2014 ◽  
Vol 23 (01) ◽  
pp. 1450013
Author(s):  
MOHAMED M. MANSOUR ◽  
MOSTAFA A. ELMALA ◽  
ABDEL-AZIZ T. SHALABY ◽  
EL-SAYED M. EL-RABAIE
Keyword(s):  
Thin Film ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Materials ◽  
Optimal Performance ◽  
Resonant Structures ◽  
Full Wave ◽  
Electronic Tuning ◽  
Microwave Components ◽  
Full Wave Analysis ◽  
Electromagnetic Characteristics

In this paper, we propose a tunable CRLH ZOR based on the latest resurgent of ferroelectric materials. It is known that for most resonant structures, attainment of optimal performance requires some level of additional tuning through either mechanical means (i.e., with tuning screws) or other coupling mechanisms. Therefore, incorporation of electronic tuning into high temperature superconductor (HTS) material components without degradation of performance is very attractive. The result will be low-loss microwave components that could be fine-tuned for optimal performance, with the additional attribute of being tunable over a broadband frequency range. The dielectric properties of the ferroelectric thin film, and the thickness of the ferroelectric film, play a fundamental role in the frequency or phase tunability and the overall insertion loss of the circuit. The main driving force toward using the ferroelectric is the potential for substantial miniaturization of microwave components and systems and the potential for integration with microelectronic circuits due to the development of thin and thick film ferroelectric technology. The ZOR is designed, and simulated by the full-wave analysis software. The response shows a variation of electromagnetic characteristics with the applied electric field, ferroelectric thickness and the operating temperature.

Polarity Effect and Dielectric Breakdown of Composite Ferroelectric Films as the Dielectric for Electrowetting Systems

2018 ◽  
Vol 281 ◽  
pp. 598-603 ◽  
Author(s):  
Wei Qiang Wang ◽  
Yan Su
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Breakdown Voltage ◽  
Dielectric Breakdown ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Film ◽  
Ferroelectric Films ◽  
Dc Voltage ◽  
Voltage Polarity ◽  
Voltage Frequency

In this paper, we study the electrical properties and breakdown phenomena of BaTiO3/Teflon composite ferroelectric thin film in electrowetting systems. The experimental results showed that the electrowetting effect and the breakdown voltage depend on DC voltage polarity, and this polarity dependence is closely related to the thickness of the ferroelectric film. Under AC voltages, the breakdown voltage increased directly with voltage frequency. These results are useful for designing reliable EWOD devices with low operation voltages and high robustness.

Selective Deposition of C-axis Oriented Pb5Ge3O11 on the Patterned High k Gate Oxide by MOCVD Processes

2003 ◽  
Vol 784 ◽  
Author(s):  
Tingkai Li ◽  
Sheng Teng Hsu ◽  
Bruce Ulrich ◽  
Dave Evans
Keyword(s):  
Thin Film ◽  
High Surface ◽  
Ferroelectric Thin Film ◽  
Gate Oxide ◽  
Deposition Process ◽  
Ferroelectric Materials ◽  
Selective Deposition ◽  
High K ◽  
Critical Issues ◽  
High K Dielectric

ABSTRACTFor the high density FeRAM applications, the integration process-induces damages such as etching damage that degrades the properties of FRAM devices and the high surface roughness of ferroelectric thin film that results in the difficulty for alignment are critical issues. In order to solve these problems, selective deposition process is developed to simplify the integration processes and improve the properties of FeRAM memory devices. Based on the differential deposition rates of ferroelectric materials on high-k oxide and silicon dioxide, we can selectively deposit a c-axis oriented PGO thin film on the patterned high-k oxide such as ZrOx (x=0–2), HfOx (x=0–2), TiO2, and their mixtures other than on SiO2. By patterning the high-k dielectric, the PGO deposition is limited to just the preferred pattern high-k area. SEM, EDX and x-ray measurements further confirm that the c-axis oriented PGO thin films are selectively deposited on the high-k gate oxide other than on the field SiO2 including alignment mark area, which will eliminate the roughness problem for the alignments. Also the etching damage is eliminated since there is no need to etch the PGO film, which improved the properties of FeRAM devices.

Investigation of Electrical Degradation Effects in Ferroelectric Thin Film Based Tunable Microwave Components

2002 ◽  
Vol 49 (1) ◽  
pp. 103-112 ◽  
Author(s):  
Konstantin Astafiev ◽  
Vladimir Sherman ◽  
Alexander Tagantsev ◽  
Nava Setter ◽  
Tatyana Rivkin ◽  
...  
Keyword(s):  
Thin Film ◽  
Ferroelectric Thin Film ◽  
Electrical Degradation ◽  
Microwave Components ◽  
Tunable Microwave

Self-Assembled 3-Mercaptopropyltrimethoxysilane (MPS) ON Ba0.5Sr0.5TiO3 as an Adhesion Layer for Microwave Devices

2001 ◽  
Vol 666 ◽  
Author(s):  
Carlos R. Cabrera ◽  
Joseph D. Warner ◽  
Carl H. Mueller ◽  
Fred Van Keuls ◽  
Félix A. Miranda ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Ferroelectric Thin Film ◽  
Research Field ◽  
Self Assembled Monolayers ◽  
Adhesion Layer ◽  
Microwave Components ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
Film Dielectric

ABSTRACTThe use of self-assembled monolayers in patterning, adhesion studies, corrosion protection, and electronic devices is a growing research field. Here we discuss the use of (3-mercaptopropyl)trimethoxysilane (MPS) as an adhesion layer in microwave components using metal-ferroelectric thin film-dielectric heterostructures. The MPS has been used as an adhesion layer between a ferroelectric thin film and gold (Au) in the development of tunable microwave components. The system studied was the metal/ferroelectric thin film/dielectric heterostructure with the MPS molecule as an adhesion layer between the metal and the ferroelectric thin film. Specifically, we have looked at the interface between the Au layer and the Ba0.5Sr0.5TiO3 (BSTO) ferroelectric thin film deposited on LaAlO3 (LAO). Typically, during metallization via e-beam evaporation, it is common to deposit a chrome or titanium adhesion layer (∼ 15 nm thick) between the Au and BSTO films. However, this underlayer may diffuse through the Au causing an increase of the RF losses of the device. Replacing the metal buffer layer interface with a self-assembled structure, such as MPS, can avoid the effect of inter- diffusion of chrome in the Au vapor deposit film. The surface modification of Ba0.5Sr0.5TiO3 (BSTO) thin film with MPS was studied by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy. The effectiveness of MPS self-assembled monolayers as an adhesion layer was determined by analyzing the performance of Au/MPS/BSTO/LAO interdigital capacitors as a function of dc voltage and temperature at 1 MHz.

Microstructure of thin film La0.5Sr0.5CoO3 electrode for microelectronics applications

1995 ◽  
Vol 53 ◽  
pp. 450-451
Author(s):  
Z. L. Wang ◽  
Jiming Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Random Access ◽  
Chemical Vapor ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Film ◽  
Epitaxial Relationship ◽  
Lattice Image ◽  
Ferroelectric Capacitor ◽  
Mocvd Technique

Increasing circuit densities in dynamic random access memories (DRAMs) is one of the major interests in microelectronics research. In a ferroelectric capacitor memory, conducting electrodes must make intimate and ohmic contact to both sides of the ferroelectric thin film. The bottom electrode serves as the substrate during growth and the top electrode is deposited on top of the ferroelectric film. Single crystalline La0.5Sr0.5CoO3 (LSCO) thin films, which are conductive and low electrical resistivity, have recently grown on both sides of Pb-Zr-Ti-O (PZT) ferroelectric film, which has shown a great potential for making fatigue-free small thickness storage capacitors. The present paper reports the microstructure studies of the LSCO thin films grown on MgO(00l) and LaAlO3(100) (LAO) substrates by the metalorganic chemical vapor deposition (MOCVD) technique.Cross-section specimens were made to examine the structure of the film and its relationship with the substrate. Select-area electron diffraction (SAD) and high-resolution lattice image show that the LSCO film has an epitaxial relationship with the MgO/LAO substrate.

Selective Deposition of C-axis Oriented Pb5Ge3O11 on the Patterned High k Gate Oxide by MOCVD Processes

2003 ◽  
Vol 786 ◽  
Author(s):  
Tingkai Li ◽  
Sheng Teng Hsu ◽  
Bruce Ulrich ◽  
Dave Evans
Keyword(s):  
Thin Film ◽  
High Surface ◽  
Ferroelectric Thin Film ◽  
Gate Oxide ◽  
Deposition Process ◽  
Ferroelectric Materials ◽  
Selective Deposition ◽  
High K ◽  
Critical Issues ◽  
High K Dielectric

ABSTRACTFor the high density FeRAM applications, the integration process-induces damages such as etching damage that degrades the properties of FRAM devices and the high surface roughness of ferroelectric thin film that results in the difficulty for alignment are critical issues. In order to solve these problems, selective deposition process is developed to simplify the integration processes and improve the properties of FeRAM memory devices. Based on the differential deposition rates of ferroelectric materials on high-k oxide and silicon dioxide, we can selectively deposit a c-axis oriented PGO thin film on the patterned high-k oxide such as ZrOx (x=0–2), HfOx (x=0–2), TiO2, and their mixtures other than on SiO2. By patterning the high-k dielectric, the PGO deposition is limited to just the preferred pattern high-k area. SEM, EDX and x-ray measurements further confirm that the c-axis oriented PGO thin films are selectively deposited on the high-k gate oxide other than on the field SiO2 including alignment mark area, which will eliminate the roughness problem for the alignments. Also the etching damage is eliminated since there is no need to etch the PGO film, which improved the properties of FeRAM devices.

scholarly journals Photonic integration based on a ferroelectric thin-film platform

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Shunsuke Abe ◽  
Tomoki Joichi ◽  
Kouichiro Uekusa ◽  
Hideo Hara ◽  
Shin Masuda
Keyword(s):  
Thin Film ◽  
Lead Zirconate Titanate ◽  
High Speed ◽  
Sol Gel ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Materials ◽  
Propagation Loss ◽  
Optical Modulator ◽  
Photonic Integration ◽  
Electro Optic

Abstract Photonic-integrated circuits (PICs) using ferroelectric materials are expected to be used in many applications because of its unique optical properties such as large electro-optic coefficients. In this study, a novel PIC based on a ferroelectric thin-film platform was designed and fabricated, where high-speed optical modulator, spot-size converters (SSCs), and a variable optical attenuator (VOA) were successfully integrated. A ferroelectric lanthanum-modified lead zirconate titanate (PLZT) thin film was epitaxially-grown by using a modified sol-gel method, and it exhibits large electro-optic coefficients (>120 pm/V) and low propagation loss (1.1 dB/cm). The optical modulator, a Mach-Zehnder type, exhibited a half-wave voltage (Vπ) of 6.0 V (VπL = 4.5 Vcm) and optical modulation up to 56 Gb/s. Also, the VOA (with attenuation range of more than 26 dB) was successfully integrated with the modulator. As a result, it is concluded that the developed ferroelectric platform can pave the way for photonic integration.

Effect of Forming Gas on Properties of SrBi2Ta2O9 Ferroelectric Thin Film and Powder

2009 ◽  
Vol 24 (4) ◽  
pp. 737-740 ◽  
Author(s):  
Dong-Sheng WANG ◽  
Tao YU ◽  
An HU ◽  
Di WU ◽  
Ai-Dong LI ◽  
...  
Keyword(s):  
Thin Film ◽  
Ferroelectric Thin Film
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