1.2 kV silicon carbide Schottky barrier diode embedded MOSFETs with extension structure and titanium-based single contact

2020 ◽  
Vol 59 (2) ◽  
pp. 026502
Author(s):  
Haruka Shimizu ◽  
Naoki Watanabe ◽  
Takahiro Morikawa ◽  
Akio Shima ◽  
Noriyuki Iwamuro
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Single Contact

scholarly journals SILICON CARBIDE SCHOTTKY BARRIER DIODE

2005 ◽  
Vol 15 (04) ◽  
pp. 821-866 ◽  
Author(s):  
Jian H. Zhao ◽  
Kuang Sheng ◽  
Ramon C. Lebron-Velilla
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Gas Sensors ◽  
Schottky Diodes ◽  
Schottky Barrier Diode ◽  
Schottky Barrier Diodes ◽  
Performance Parameters ◽  
Development History ◽  
The Status

This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

Silicon carbide split-trench-source VDMOSFET with integrated Schottky barrier diode and reduced cell pitch

2019 ◽  
Vol 217 ◽  
pp. 111092
Author(s):  
Hui Chen ◽  
Xiaoyan Tang ◽  
Qingwen Song ◽  
Yimeng Zhang ◽  
Zhiqiang Bai ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Schottky Barrier Diode

Silicon Carbide Schottky Rectifiers with Improved Avalanche Ruggedness

2016 ◽  
Vol 858 ◽  
pp. 777-781 ◽  
Author(s):  
Andrei Konstantinov ◽  
Song Jinman ◽  
Sungmo Young ◽  
Brian Lee ◽  
Fredrik Allerstam ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Avalanche Breakdown ◽  
Schottky Rectifiers ◽  
Schottky Rectifier ◽  
Non Destructive

Silicon carbide Schottky-barrier diode (SBD) rectifiers have been manufactured with low on-state voltages, high surge currents and high avalanche ruggedness. Non-destructive unclamped inductive switching currents of 188 A (mean) are achieved for the 1200 V 15 A rectifier. Very tight distribution of maximum sustained UIS current is confirmed. We relate improved avalanche ruggedness to bulk avalanche breakdown and show the breakdown pattern of the new Schottky rectifier being the same type as that for the p-n diode.

Physics‐based spice model on the dynamic characteristics of silicon carbide Schottky barrier diode

2016 ◽  
Vol 9 (15) ◽  
pp. 2803-2807 ◽  
Author(s):  
Xintian Zhou ◽  
Yan Wang ◽  
Ruifeng Yue ◽  
Gang Dai ◽  
Juntao Li
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Dynamic Characteristics ◽  
Schottky Barrier Diode ◽  
Spice Model
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