Technical Research on High Power Silicon Carbide Schottky Barrier Diode

2019 ◽  
Author(s):  
Wang Zuchuan ◽  
Yao Haiting ◽  
Wu Xiaoye
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Power ◽  
Schottky Barrier Diode ◽  
Technical Research

scholarly journals Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 575 ◽  
Author(s):  
Yue Sun ◽  
Xuanwu Kang ◽  
Yingkui Zheng ◽  
Jiang Lu ◽  
Xiaoli Tian ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Schottky Barrier ◽  
High Power ◽  
High Frequency ◽  
Recent Progress ◽  
Schottky Barrier Diode ◽  
Schottky Barrier Diodes

Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

SILICON CARBIDE DIODES FOR MICROWAVE APPLICATIONS

2005 ◽  
Vol 15 (04) ◽  
pp. 899-930 ◽  
Author(s):  
Konstantin Vassilevski
Keyword(s):  
Silicon Carbide ◽  
Thermal Properties ◽  
Schottky Barrier ◽  
High Power ◽  
Current Position ◽  
Microwave Frequencies ◽  
Figures Of Merit ◽  
Microwave Applications ◽  
Device Operation ◽  
Impatt Diodes

Silicon carbide ( SiC ) offers significant advantages for microwave high power devises due to its unique electrical and thermal properties. This review presents a summary of the current position in the development of silicon carbide diodes operating at microwave frequencies: varactors, Schottky barrier mixer diodes, p-i-n and IMPATT diodes. Simplified theory of device operation is given for each kind of microwave diodes to derive the figures of merit, to estimate the potential silicon carbide performance for fabrication of these diodes and to compare SiC with conventional semiconductors. These analyses are followed by description of diode design, fabrication and measured characteristics.

scholarly journals SILICON CARBIDE SCHOTTKY BARRIER DIODE

2005 ◽  
Vol 15 (04) ◽  
pp. 821-866 ◽  
Author(s):  
Jian H. Zhao ◽  
Kuang Sheng ◽  
Ramon C. Lebron-Velilla
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Gas Sensors ◽  
Schottky Diodes ◽  
Schottky Barrier Diode ◽  
Schottky Barrier Diodes ◽  
Performance Parameters ◽  
Development History ◽  
The Status

This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

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