Two-Step Growth of (0001) ZnO Single-Crystal Layers on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy

We report the characteristics of AlN epilayers grown directly on cylindrical-patterned sapphire substrates (CPSS) by hydride vapor-phase epitaxy (HVPE). To evaluate the effect of CPSS, we analyzed the threading dislocation densities (TDDs) of AlN films grown simultaneously on CPSS and flat sapphire substrate (FSS) by transmission electron microscopy (TEM). The corresponding TDD is measured to be 5.69 x 108 cm−2 for the AlN sample grown on the CPSS that is almost an order of magnitude lower than the value of 3.43 × 109 cm−2 on the FSS. The CPSS contributes to reduce the TDs originated from the AlN/sapphire interface via bending the TDs by lateral growth during the coalescence process. In addition, the reduction of direct interface area between AlN and sapphire by CPSS reduce the generation of TDs.

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Electrical properties, structural properties, and deep trap spectra of thin α-Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates

APL Materials ◽

10.1063/1.5075718 ◽

2018 ◽

Vol 6 (12) ◽

pp. 121110 ◽

Cited By ~ 13

Author(s):

Dae-Woo Jeon ◽

Hoki Son ◽

Jonghee Hwang ◽

A. Y. Polyakov ◽

N. B. Smirnov ◽

...

Keyword(s):

Electrical Properties ◽

Structural Properties ◽

Vapor Phase ◽

Basal Plane ◽

Deep Trap ◽

Vapor Phase Epitaxy ◽

Sapphire Substrates

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Pitch-Independent Realization of 30-nm-Diameter InGaAs Nanowire Arrays by Two-Step Growth Method in Selective-Area Metalorganic Vapor-Phase Epitaxy

Applied Physics Express ◽

10.7567/apex.6.025502 ◽

2013 ◽

Vol 6 (2) ◽

pp. 025502 ◽

Cited By ~ 8

Author(s):

Yoshinori Kohashi ◽

Shinya Sakita ◽

Shinjiroh Hara ◽

Junichi Motohisa

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Nanowire Arrays ◽

Independent Realization ◽

Selective Area ◽

Growth Method ◽

Step Growth

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Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

Materials ◽

10.3390/ma10060605 ◽

2017 ◽

Vol 10 (6) ◽

pp. 605 ◽

Cited By ~ 3

Author(s):

Chi-Tsung Tasi ◽

Wei-Kai Wang ◽

Tsung-Yen Tsai ◽

Shih-Yung Huang ◽

Ray-Hua Horng ◽

...

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Hydride Vapor Phase Epitaxy ◽

Sapphire Substrates ◽

Patterned Sapphire Substrates

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Halide Vapor Phase Epitaxy α‐ and ε‐Ga 2 O 3 Epitaxial Films Grown on Patterned Sapphire Substrates

physica status solidi (a) ◽

10.1002/pssa.201900892 ◽

2020 ◽

Vol 217 (14) ◽

pp. 1900892 ◽

Cited By ~ 8

Author(s):

Sevastian Shapenkov ◽

Oleg Vyvenko ◽

Evgeny Ubyivovk ◽

Oleg Medvedev ◽

Georgiy Varygin ◽

...

Keyword(s):

Vapor Phase ◽

Epitaxial Films ◽

Vapor Phase Epitaxy ◽

Sapphire Substrates ◽

Patterned Sapphire Substrates

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GaInAsP/InP ORGANOMETALLIC VAPOR PHASE EPITAXY FOR RESEARCH AND FABRICATION OF DEVICES

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156490000150 ◽

1990 ◽

Vol 01 (03n04) ◽

pp. 347-367 ◽

Cited By ~ 1

Author(s):

KAZUHITO FURUYA ◽

YASUYUKI MIYAMOTO

Keyword(s):

Quantum Well ◽

Single Crystal ◽

Vapor Phase ◽

Optical Communication ◽

Ballistic Transport ◽

Growth Conditions ◽

Vapor Phase Epitaxy ◽

Quantum Well Lasers ◽

Organometallic Vapor Phase Epitaxy ◽

Growth Technique

GaInAsP/InP organometallic vapor phase epitaxy (OMVPE) is widely used for the fabrication of lasers and detectors used in optical communication. Here we describe the apparatus and growth technique of OMVPE and point out important growth conditions to obtain device quality single-crystal materials. Our research includes the use of OMVPE for the study of quantum-well lasers, ballistic-transport electron devices and nanometer heterostructures.

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