Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation

2012 ◽  
Vol 51 (3S) ◽  
pp. 03CA01
Author(s):  
Takashi Nishida ◽  
Kazushi Fuse ◽  
Mamoru Furuta ◽  
Yasuaki Ishikawa ◽  
Yukiharu Uraoka
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thick Films ◽  
Chemical Vapor ◽  
Electron Beam Evaporation

Comparison of Characteristics of Rapid Thermal and Microwave Annealed Amorphous Silicon Thin Films Prepared by Electron Beam Evaporation and Low Pressure Chemical Vapor Deposition

2013 ◽  
Vol 663 ◽  
pp. 372-376
Author(s):  
Chi Hua Hsieh ◽  
Li Te Tsou ◽  
Sheng Hao Chen ◽  
Huai Yi Chen ◽  
Yao Jen Lee ◽  
...  
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Electron Beam Evaporation ◽  
Silicon Thin Films ◽  
Pressure Chemical ◽  
Si Films ◽  
The Cost

In this study we use chemical and physical vapor depositions to fabricate amorphous silicon (a-Si) films. We also use traditional rapid thermal annealing (RTA) and advanced microwave annealing (MWA) to activate or crystallize a-Si films and then observe their sheet resistances and crystallization. We discovered, although the cost of films fabricated by electron beam (e-beam) evaporation is relatively lower than by chemical vapor deposition (CVD), the effects of the former method are poorer whether in sheet resistance or film crystallization. In addition, only at the doping layer prepared by CVD can film crystallization degree produced by MWA match RTA.

Comparative Study of Solid-Phase Crystallization of Amorphous Silicon Deposited by Hot-wire CVD, Plasma-Enhanced CVD, and Electron-Beam Evaporation

2007 ◽  
Vol 989 ◽  
Author(s):  
Paul Stradins ◽  
Oliver Kunz ◽  
David L. Young ◽  
Yanfa Yan ◽  
Kim M. Jones ◽  
...  
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Growth Front ◽  
Hot Wire ◽  
Solid Phase Crystallization

AbstractSolid-phase crystallization (SPC) rates are compared in amorphous silicon films prepared by three different methods: hot-wire chemical vapor deposition (HWCVD), plasma-enhanced chemical vapor deposition (PECVD), and electron-beam physical vapor deposition (e-beam). Random SPC proceeds approximately 5 and 13 times slower in PECVD and e-beam films, respectively, as compared to HWCVD films. Doping accelerates random SPC in e-beam films but has little effect on the SPC rate of HWCVD films. In contrast, the crystalline growth front in solid-phase epitaxy experiments propagates at similar speed in HWCVD, PECVD, and e-beam amorphous Si films. This strongly suggests that the observed large differences in random SPC rates originate from different nucleation rates in these materials while the grain growth rates are relatively similar. The larger grain sizes observed for films that exhibit slower random SPC support this suggestion.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

Effects of hydrogen on the growth of nanocrystalline silicon films by electron-beam excited plasma chemical vapor deposition

2000 ◽  
Vol 88 (11) ◽  
pp. 6848-6855 ◽  
Author(s):  
Mitsuru Imaizumi ◽  
Koji Yamaguchi ◽  
Kazuhiko Okitsu ◽  
Masafumi Yamaguchi ◽  
Tamio Hara ◽  
...  
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Nanocrystalline Silicon Films
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