Effects of Side Surface Roughness on Carrier Mobility in Tri-Gate Single Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cc11 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CC11 ◽

Author(s):

Ke Mao ◽

Takuya Saraya ◽

Toshiro Hiramoto

Keyword(s):

Surface Roughness ◽

Metal Oxide ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Side Surface ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Direct Measurement of Carrier Mobility in Intrinsic Channel Tri-Gate Single Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cc08 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CC08

Author(s):

Ke Mao ◽

Takuya Saraya ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Direct Measurement ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Carrier mobility degradation in metal‐oxide‐semiconductor field‐effect transistors due to oxide charge

Journal of Applied Physics ◽

10.1063/1.355249 ◽

1993 ◽

Vol 74 (1) ◽

pp. 757-759 ◽

Author(s):

A. Phanse ◽

D. Sharma ◽

A. Mallik ◽

J. Vasi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxide Charge ◽

Mobility Degradation

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A Reliable Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) Based on Radio-Frequency Analysis

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2014.9884 ◽

2014 ◽

Vol 14 (11) ◽

pp. 8219-8224

Author(s):

Jae Hwa Seo ◽

Young Jun Yoon ◽

Hwan Gi Lee ◽

Gwan Min Yoo ◽

Eou-Sik Cho ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Frequency Analysis ◽

Extraction Method ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Fabrication of Highly Scaled Silicon Nanowire Gate-All-Around Metal–Oxide–Semiconductor Field Effect Transistors by Using Self-Aligned Local-Channel V-gate by Optical Lithography Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.084203 ◽

2010 ◽

Vol 49 (8) ◽

pp. 084203 ◽

Author(s):

Jae Hyun Park ◽

Jae Young Song ◽

Jong Pil Kim ◽

Sang Wan Kim ◽

Jang-Gn Yun ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Optical Lithography ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Lithography Process

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Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2840187 ◽

2008 ◽

Vol 92 (5) ◽

pp. 052102 ◽

Author(s):

K. H. Cho ◽

K. H. Yeo ◽

Y. Y. Yeoh ◽

S. D. Suk ◽

M. Li ◽

...

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Device and Circuit Codesign Strategy for Application to Low-Noise Amplifier Based on Silicon Nanowire Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dn03 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DN03 ◽

Author(s):

Seongjae Cho ◽

Hee-Sauk Jhon ◽

Jung Hoon Lee ◽

Se Hwan Park ◽

Hyungcheol Shin ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Low Noise ◽

Metal Oxide Semiconductor ◽

Low Noise Amplifier ◽

Oxide Semiconductor ◽

Noise Amplifier

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Monolithic Integration of a Silicon Nanowire Field-Effect Transistors Array on a Complementary Metal-Oxide Semiconductor Chip for Biochemical Sensor Applications

Analytical Chemistry ◽

10.1021/acs.analchem.5b02604 ◽

2015 ◽

Vol 87 (19) ◽

pp. 9982-9990 ◽

Author(s):

Paolo Livi ◽

Moria Kwiat ◽

Amir Shadmani ◽

Alexander Pevzner ◽

Giulio Navarra ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Monolithic Integration ◽

Oxide Semiconductor ◽

Sensor Applications ◽

Semiconductor Chip

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The role of Si orientation and temperature on the carrier mobility in metal oxide semiconductor field-effect transistors with ultrathin HfO2 gate dielectrics

Journal of Applied Physics ◽

10.1063/1.2210627 ◽

2006 ◽

Vol 100 (1) ◽

pp. 014504 ◽

Author(s):

B. Mereu ◽

C. Rossel ◽

E. P. Gusev ◽

M. Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Carrier Mobility ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.104203 ◽

2012 ◽

Vol 51 (10R) ◽

pp. 104203 ◽

Author(s):

Choong Hyun Lee ◽

Tomonori Nishimura ◽

Toshiyuki Tabata ◽

Kosuke Nagashio ◽

Koji Kita ◽

...

Keyword(s):

Surface Roughness ◽

Electrical Properties ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Deionized Water ◽

Oxide Semiconductor

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Corner effects on phonon-limited mobility in rectangular silicon nanowire metal-oxide-semiconductor field-effect transistors based on spatially resolved mobility analysis

Journal of Applied Physics ◽

10.1063/1.3592252 ◽

2011 ◽

Vol 109 (11) ◽

pp. 113712 ◽

Author(s):

Yeonghun Lee ◽

Kuniyuki Kakushima ◽

Kenji Natori ◽

Hiroshi Iwai

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Mobility Analysis ◽

Limited Mobility ◽

Spatially Resolved ◽

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