Investigation of giant step bunching in 4H-SiC homoepitaxial growth: Proposal of cluster effect model

2015 ◽  
Vol 54 (6) ◽  
pp. 061301 ◽  
Author(s):  
Yuuki Ishida ◽  
Sadafumi Yoshida
Keyword(s):  
Cluster Effect ◽  
Step Bunching ◽  
Homoepitaxial Growth ◽  
Effect Model ◽  
Giant Step

Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces

2010 ◽  
Vol 645-648 ◽  
pp. 543-546 ◽  
Author(s):  
Yuuki Ishida ◽  
Tetsuo Takahashi ◽  
Hajime Okumura ◽  
Kazuo Arai ◽  
Sadafumi Yoshida
Keyword(s):  
Thermal Decomposition ◽  
Chemical Reaction ◽  
Experimental Verification ◽  
Reaction Model ◽  
Carbon Clusters ◽  
Cluster Effect ◽  
Step Bunching ◽  
Giant Step ◽  
Chemical Reaction Model

In this study, we investigated the cluster effect on the occurrence of giant step bunching. We generated carbon clusters on 4H-SiC (0001) surfaces by thermal decomposition of SiC in an Ar atmosphere and controlled the surface concentrations of the clusters by adding H2 gas. We found the boundaries between surfaces with and without giant steps to show Arrhenius-type behavior. This behavior agreed with our predictions deduced from a chemical reaction model that takes the cluster effect into account, suggesting that giant step bunching is attributable to the formation of clusters on SiC.

Simulation Studies on Giant Step Bunching in 4H-SiC Epitaxial Growth: Cluster Effect

2014 ◽  
Vol 778-780 ◽  
pp. 183-186 ◽  
Author(s):  
Yuuki Ishida ◽  
Sadafumi Yoshida
Keyword(s):  
Computer Simulation ◽  
Epitaxial Growth ◽  
Threshold Value ◽  
Wavy Surface ◽  
Cluster Effect ◽  
Simulation Studies ◽  
Flux Rate ◽  
Step Bunching ◽  
Giant Step

We have developed the computer simulation including cluster effect and Schwoebel effect and investigated the conditions generating GSB using the simulation. We have demonstrated that the simulation developed can reproduce GSB. We have found for the occurence of GSB that there exists a threshold value of the surplus flux rate of Si-or C-source gases not contributing to growth, which depends on the flux rate of each source gas, namely the boundary between with and without GSB. It is noted that this boundary does not depend on the off-angle of substrates. We have also found the mechanism for explaining the occurrence of wavy surface morphplogy.

Giant step bunching on SrTiO3 thin films grown epitaxially on vicinal MgO (1 0 0) surfaces

2021 ◽  
Vol 570 ◽  
pp. 151266
Author(s):  
Azza Hadj Youssef ◽  
Gitanjali Kolhatkar ◽  
Ifeanyichukwu C. Amaechi ◽  
Rajesh Katoch ◽  
Yoandris González ◽  
...  
Keyword(s):  
Thin Films ◽  
Step Bunching ◽  
Giant Step

4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

2010 ◽  
Vol 645-648 ◽  
pp. 99-102 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Sachiko Ito ◽  
Junji Senzaki ◽  
Hajime Okumura
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Growth Conditions ◽  
Step Bunching ◽  
Homoepitaxial Growth ◽  
Blocking Voltage ◽  
Basal Plane Dislocation ◽  
Epilayer Surface

We have carried out detailed investigations of 4H-SiC homoepitaxial growth on vicinal off-angled Si-face substrates. We found that the surface morphology of the substrate just after in-situ H2 etching was also affected by the value of the vicinal-off angle. Growth conditions consisting of a low C/Si ratio and a low growth temperature were effective in suppressing macro step bunching at the grown epilayer surface. We also demonstrated epitaxial growth without step bunching on a 2-inch 4H-SiC Si-face substrate with a vicinal off angle of 0.79o. Ni Schottky barrier diodes fabricated on an as-grown epilayer had a blocking voltage above 1000V and a leakage current of less than 5x10-7A/cm2. We also investigated the propagation of basal plane dislocation from the vicinal off angled substrate into the epitaxial layer.

Simulation Studies on Giant Step Bunching Accompanying Trapezoid-Shape Defects in 4H-SiC Epitaxial Layer

2014 ◽  
Vol 778-780 ◽  
pp. 222-225 ◽  
Author(s):  
Yuuki Ishida ◽  
Sadafumi Yoshida
Keyword(s):  
Epitaxial Layer ◽  
Generation Mechanism ◽  
Simulation Studies ◽  
Step Bunching ◽  
Giant Step

Trapezoid-shape (T-S) defects on epilayer surfaces, which include two kinds of the giant step bunching (GSB), are one of killer defects for MOSFETs. We have investigated the generation mechanism of the two GSBs using "step kinetics simulator" we developed. The simulator has reproduced the behavior of the GSBs. Based on results from the simulation, we have discussed the generation mechanism of the two GSBs.

Extended study of the step-bunching mechanism during the homoepitaxial growth of SiC

2010 ◽  
Vol 518 (6) ◽  
pp. S159-S161 ◽  
Author(s):  
M. Camarda ◽  
A. La Magna ◽  
A. Severino ◽  
F. La Via
Keyword(s):  
Extended Study ◽  
Step Bunching ◽  
Homoepitaxial Growth

Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces

2008 ◽  
Vol 600-603 ◽  
pp. 473-476 ◽  
Author(s):  
Yuuki Ishida ◽  
Tetsuo Takahashi ◽  
Hajime Okumura ◽  
Kazuo Arai ◽  
Sadafumi Yoshida
Keyword(s):  
Epitaxial Growth ◽  
Hydrogen Etching ◽  
Step Bunching ◽  
Giant Step ◽  
Cluster Generation

To elucidate the origin of giant step bunching on 4˚ off-axis 4H-SiC (0001) faces, we carried out hydrogen etching and epitaxial growth under various conditions. We found that giant step bunching occurs during hydrogen etching and epitaxial growth at extremely low or high C/Si ratios, i.e., with an excessive supply of SiH4 or C3H8. From these results, we have proposed that the origins of giant step bunching are asymmetry in the step kinetics in etching and Si or C cluster generation on terraces during growth.

Low Pressure Homoepitaxial Growth of 4H-SiC on 4°off-Axis Substrates

2015 ◽  
Vol 821-823 ◽  
pp. 181-184 ◽  
Author(s):  
Ji Chao Hu ◽  
Yu Ming Zhang ◽  
Ren Xu Jia ◽  
Yue Hu Wang ◽  
Bin Xin
Keyword(s):  
Surface Roughness ◽  
Low Pressure ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
Growth Pressure ◽  
Step Bunching ◽  
Homoepitaxial Growth ◽  
Surface Mobility ◽  
The Impact

Step-bunching and triangular defects are significant problems in achieving higher growth rate 4H-SiC epilayers in a horizontal hot wall CVD reactor using a standard non-chlorinated chemistry of silane-propane-hydrogen on 4°off-axis substrates. In this work, the impact of growth pressure on generation of step-bunching and triangular defects and the correlations between the surface roughness and the formation of defects were investigated. It has been found that the impact of growth pressure on concentration of the triangle defects and surface roughness is obviously different. An overall reduction of defects was observed with decreasing growth pressure while the surface roughness increased. The increased adatom surface mobility in low pressure range and minimization of surface free energy are the main reasons for the phenomenon above. High Resolution X-Ray Diffraction (HRXRD) indicated that the structural quality of 4H-SiC epilayers performed at low pressure was higher than that obtained at high pressure.

Step bunching and step “rotation” in homoepitaxial growth of Si on Si(110)-16×2

2011 ◽  
Vol 605 (7-8) ◽  
pp. 838-843 ◽  
Author(s):  
Arnold Alguno ◽  
Sergey N. Filimonov ◽  
Maki Suemitsu
Keyword(s):  
Step Bunching ◽  
Homoepitaxial Growth
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