4H-SiC Homoepitaxial Growth on Vicinal-Off Angled Si-Face Substrate

2010 ◽  
Vol 645-648 ◽  
pp. 99-102 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Sachiko Ito ◽  
Junji Senzaki ◽  
Hajime Okumura
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Growth Conditions ◽  
Step Bunching ◽  
Homoepitaxial Growth ◽  
Blocking Voltage ◽  
Basal Plane Dislocation ◽  
Epilayer Surface

We have carried out detailed investigations of 4H-SiC homoepitaxial growth on vicinal off-angled Si-face substrates. We found that the surface morphology of the substrate just after in-situ H2 etching was also affected by the value of the vicinal-off angle. Growth conditions consisting of a low C/Si ratio and a low growth temperature were effective in suppressing macro step bunching at the grown epilayer surface. We also demonstrated epitaxial growth without step bunching on a 2-inch 4H-SiC Si-face substrate with a vicinal off angle of 0.79o. Ni Schottky barrier diodes fabricated on an as-grown epilayer had a blocking voltage above 1000V and a leakage current of less than 5x10-7A/cm2. We also investigated the propagation of basal plane dislocation from the vicinal off angled substrate into the epitaxial layer.

Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth

2009 ◽  
Vol 615-617 ◽  
pp. 113-116 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Hajime Okumura ◽  
Kazuo Arai
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Flow Rate ◽  
Growth Conditions ◽  
Layer Surface ◽  
Specular Surface ◽  
Homoepitaxial Growth ◽  
Angle Difference ◽  
The Face

We have carried out detailed investigations on the influence of the growth conditions and the wafer off angle on the surface morphology of low off angle homoepitaxial growth. We found triangular features to be also serious problems on a 4 degree off 4H-SiC Si-face epitaxial layer surface. The control of the C/Si ratio by controlling the SiH4 flow rate is effective in suppressing the triangular features on 4 degree off Si-face homoepitaxial layer. As regards epitaxial growth on a vicinal off-axis substrate, the small off angle difference of a tenth part of a degree has an influence on the surface morphology of the epitaxial layer. This tendency depends on the face polarity and a C-face can be obtained that has a specular surface with a lower vicinal off angle than a Si-face. By controlling this off angle, a specular surface morphology without a bunched step structure could be obtained on a vicinal off angle 4H-SiC Si-face.

Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates

2011 ◽  
Vol 679-680 ◽  
pp. 59-62 ◽  
Author(s):  
Stefano Leone ◽  
Yuan Chih Lin ◽  
Franziska Christine Beyer ◽  
Sven Andersson ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Doping Concentration ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Homoepitaxial Growth ◽  
Basal Plane Dislocation ◽  
Background Doping ◽  
Quality Material

The epitaxial growth at 100 µm/h on on-axis 4H-SiC substrates is demonstrated in this study. Chloride-based CVD, which has been shown to be a reliable process to grow SiC epitaxial layers at rates above 100 µm/h on off-cut substrates, was combined with silane in-situ etching. A proper tuning of C/Si and Cl/Si ratios and the combination of different chlorinated precursors resulted in the homoepitaxial growth of 4H-SiC on Si-face substrates at high rates. Methyltrichlorosilane, added with silane, ethylene and hydrogen chloride were employed as precursors to perform epitaxial growths resulting in very low background doping concentration and high quality material, which could be employed for power devices structure on basal-plane-dislocation-free epitaxial layers.

Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates

2019 ◽  
Vol 954 ◽  
pp. 31-34
Author(s):  
Guo Guo Yan ◽  
Xing Fang Liu ◽  
Feng Zhang ◽  
Zhan Wei Shen ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Epitaxial Layers ◽  
Homoepitaxial Growth ◽  
Influence Mechanism

Homoepitaxial growths of 4H-SiC were performed on Si-face (0001) on-axis substrates in a SiH4-C2H4-H2-HCl system by using our home-made vertical hot wall CVD reactor. The influence mechanism of the growth temperature and C/Si ratio on the morphology and growth rate was studied. It is found that the steps in the epilayer become more clear with the increasing temperatures. The result indicates that the C/Si ratio window of on-axis epitaxial growth is very narrow. Only when the C/Si ratio was 1.2, a slightly improved surface morphology can be achieved. The results indicate that 4H-SiC epitaxial layers were obtained on on-axis substrates and the films were highly-oriented 4H-SiC.

scholarly journals Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates

2014 ◽  
Vol 778-780 ◽  
pp. 159-162
Author(s):  
Milan Yazdanfar ◽  
Henrik Pedersen ◽  
Olof Kordina ◽  
Erik Janzén
Keyword(s):  
Dislocation Density ◽  
Process Parameters ◽  
Growth Temperature ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Etching Time ◽  
Epitaxial Layers ◽  
Basal Plane Dislocation ◽  
Koh Etching

The effect of process parameters such as growth temperature, C/Si ratio, etching time, and Si/H2ratio on dislocation density was investigated by performing KOH etching on 100 μm thick epitaxial layers grown on 4° off axis 4H-SiC substrates at various growth conditions by a chemical vapor deposition (CVD) process using a chloride-based chemistry to achieve growth rates exceeding 100 μm/h. We observe that the growth temperature and the growth rate have no significant influence on the dislocation density in the grown epitaxial layers. A low C/Si ratio increases the density of threading screw dislocations (TSD) markedly. The basal plane dislocation (BPD) density was reduced by using a proper in-situ etch prior to growth.

Growth of Epitaxial IrSi3 Layers on Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
T. L. Lin ◽  
C. W. Nieh
Keyword(s):  
Surface Morphology ◽  
Molecular Beam ◽  
Solid Phase ◽  
Single Mode ◽  
Growth Conditions ◽  
Tem Analysis ◽  
Mbe Growth ◽  
Good Surface ◽  
Transmission Electron

AbstractEpitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.

Investigation of Epitaxially Grown PbO, TiO2 and ZrO2 as Bridge Layers for Integration of PZT on GaN by MBE

2006 ◽  
Vol 966 ◽  
Author(s):  
Xing Gu ◽  
Natalia Izyumskaya ◽  
Vataliy Avrutin ◽  
Hadis Morkoç
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Xrd Pattern ◽  
Growth Orientation

ABSTRACTEpitaxial growth of PbO, TiO2 and ZrO2 has been achieved on MOCVD grown GaN template using oxides MBE with a reactive H2O2 oxygen source. In situ RHEED was used to monitor the growth in-situ. AFM was used to characterize the surface morphology of the thin PbO and ZrO2, which show streaky, 2-D RHEED patterns. XRD pattern indicates that the growth orientation of these oxides are PbO [111]//GaN [0002], ZrO2[100]//GaN [0002] and TiO2[200]//GaN[0002].

Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth

2007 ◽  
Vol 556-557 ◽  
pp. 85-88 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Satoshi Kuroda ◽  
Hajime Okumura ◽  
Kazuo Arai
Keyword(s):  
Surface Morphology ◽  
Homoepitaxial Growth ◽  
Etching Mechanism ◽  
Step Structure ◽  
Gas Atmosphere

We have investigated the influence of in-situ H2 etching on the surface morphology of the 4H-SiC substrate prior to homoepitaxial growth. In this study, we varied the types of gas atmosphere during in-situ H2 etching; namely, hydrogen (H2) alone, hydrogen-propane (H2+C3H8), and hydrogen-silane (H2+SiH4). We found that in-situ H2 etching using H2 + SiH4 significantly improved the surface morphology of 4H-SiC substrate just after in-situ H2 etching. By adding SiH4, formation of bunched step structure during in-situ H2 etching could be significantly suppressed. In addition, H2 etching using H2 + SiH4 was able to remove scratches by etching a thinner layer than that using H2 alone. We also discussed the in-situ H2 etching mechanism under the additional SiH4 condition.

Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers

2013 ◽  
Vol 740-742 ◽  
pp. 251-254
Author(s):  
Milan Yazdanfar ◽  
Pontus Stenberg ◽  
Ian D. Booker ◽  
Ivan.G Ivanov ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Epitaxial Layers ◽  
Power Devices ◽  
Chemical Vapor Deposition Reactor ◽  
Thick Layers

Epitaxial growth of about 200 µm thick, low doped 4H-SiC layers grown on n-type 8° off-axis Si-face substrates at growth rates around 100 µm/h has been done in order to realize thick epitaxial layers with excellent morphology suitable for high power devices. The study was done in a hot wall chemical vapor deposition reactor without rotation. The growth of such thick layers required favorable pre-growth conditions and in-situ etch. The growth of 190 µm thick, low doped epitaxial layers with excellent morphology was possible when the C/Si ratio was below 0.9. A low C/Si ratio and a favorable in-situ etch are shown to be the key parameters to achieve 190 µm thick epitaxial layers with excellent morphology.

Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD

2006 ◽  
Vol 527-529 ◽  
pp. 219-222 ◽  
Author(s):  
Keiji Wada ◽  
Tsunenobu Kimoto ◽  
Kimito Nishikawa ◽  
Hiroyuki Matsunami
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Smooth Surface ◽  
Doping Concentration ◽  
Growth Conditions ◽  
The Other ◽  
Background Doping ◽  
Site Competition ◽  
Competition Behavior ◽  
Ratio Range

4H-SiC layers have been homoepitaxially grown on 4°off-axis (0001) and (000-1) under various conditions by horizontal hot-wall CVD. We have investigated surface morphology and background doping concentration of the epi-layers on 4°off-axis substrates. Surface morphology grown on the (0001) Si-face showed strong step bunching under C-rich conditions. On the other hand, smooth surface morphology on the (000-1) C-face could be grown in the wide C/Si ratio range at 1600 °C. Site-competition behavior is clearly observed under low-pressure growth conditions on 4°off-axis (000-1) C-face, leading to a lowest doping concentration of 4.4x1014 cm-3.

In-Situ Dry Etching of InP Using Phosphorus Tri-Chloride and Re-Growth Inside a Chemical Beam Epitaxial Growth Chamber

1993 ◽  
Vol 300 ◽  
Author(s):  
K M. Kapre ◽  
W. T. Tsang ◽  
P. F. Sciortino
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Substrate Surface ◽  
Etching Rate ◽  
Growth Chamber ◽  
Dramatic Improvement ◽  
First Time ◽  
Substrate Temperatures

ABSTRACTWe have extended the capability and versatility of a chemical beam epitaxial (CBE) system by demonstrating reactive chemical beam etching (RCBE) of InP using phosphorus tri chloride (PCl3)as the gaseous etching beam injected directly into the growth chamber. This permits instant switching from etching to growth (and vice versa) in the same run for the first time in CBE. We investigated RCBE of InP at various substrate temperatures between 400 °C and 580°C, under different PCl3 fluences, and etching conditions. Excellent surface morphology was obtained at high temperatures (> 530°C - 570°C) and under an etching rate of < 6 Å/sec. We also found that upon addition of trimethylindium flow equivalent to a growth rate of 1 Å/sec during RCBE a dramatic improvement in surface morphology was obtained even at a high net etching rate of 10 Å/sec. The surface morphology obtained under such conditions is indistinguishable from that of the original substrate surface. Using Si02 as a mask, in-situ etching of laser mesas followed immediately by regrowth of blocking layers with excellent wetting characteristics was obtained.

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