Analysis of GaN high electron mobility transistor switching characteristics for high-power applications with HiSIM-GaN compact model
2016 ◽
Vol 55
(4S)
◽
pp. 04EG03
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Keyword(s):
2019 ◽
Vol 10
(1)
◽
pp. 398
2002 ◽
Vol 41
(Part 2, No. 1A/B)
◽
pp. L20-L23
◽
2016 ◽
Vol 45
(7)
◽
pp. 3285-3289
◽
2017 ◽
Vol 109
◽
pp. 725-734
◽