scholarly journals Self heating Effects in GaN High Electron Mobility Transistor for Different Passivation Material

2020 ◽  
Vol 70 (5) ◽  
pp. 511-514
Author(s):  
Subhash Chander ◽  
Partap Singh ◽  
Samuder Gupta ◽  
D. S. Rawal ◽  
Mridula Gupta
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Self Heating ◽  
Channel Temperature ◽  
Passivation Layers ◽  
Different Temperatures ◽  
Output Characteristics

In this paper effect of self-heating has been studied of AlGaN/GaN high electron mobility transistor (HEMT) for different passivation layers which is promising device for high power at high frequencies. The different passivation layers used are aluminium oxide (Al2O3), silicon nitride (SiN) and silicon dioxide (SiO2). The device GaN HEMT has been simulated and characterised for its thermal behaviour by the distribution of lattice temperature inside the device using device simulation tool ATLAS from SILVACO. The transfer and output characteristics with and without self-heating has been studied for electrical characterisation. The channel temperature for different passivation observed is 448 K, 456 K and 471 K forAl2O3, SiN and SiO2 respectively. The observed different temperatures are due to difference in their thermal conductivity. This channel temperature information is critical to study the reliability of the device at high power levels.

High-power AlGaN∕GaN dual-gate high electron mobility transistor mixers on SiC substrates

2004 ◽  
Vol 40 (12) ◽  
pp. 775 ◽  
Author(s):  
K. Shiojima ◽  
T. Makimura ◽  
T. Kosugi ◽  
S. Sugitani ◽  
N. Shigekawa ◽  
...  
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Dual Gate

scholarly journals GaAs Nanomembranes in the High Electron Mobility Transistor Technology

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3461
Author(s):  
Dagmar Gregušová ◽  
Edmund Dobročka ◽  
Peter Eliáš ◽  
Roman Stoklas ◽  
Michal Blaho ◽  
...  
Keyword(s):  
Electron Concentration ◽  
Hall Mobility ◽  
Electron Mobility ◽  
Gaas Substrate ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Growth Substrate ◽  
High Electron Mobility ◽  
Alas Layer ◽  
Output Characteristics

A 100 nm MOCVD-grown HEMT AlGaAs/InGaAs/GaAs heterostructure nanomembrane was released from the growth GaAs substrate by ELO using a 300 nm AlAs layer and transferred to sapphire. The heterostructure contained a strained 10 nm 2DEG In0.23Ga0.77As channel with a sheet electron concentration of 3.4 × 1012 cm−2 and Hall mobility of 4590 cm2V−1s−1, which was grown close to the center of the heterostructure to suppress a significant bowing of the nanomembrane both during and after separation from the growth substrate. The as-grown heterostructure and transferred nanomembranes were characterized by HRXRD, PL, SEM, and transport measurements using HEMTs. The InGaAs and AlAs layers were laterally strained: ~−1.5% and ~−0.15%. The HRXRD analysis showed the as-grown heterostructure had very good quality and smooth interfaces, and the nanomembrane had its crystalline structure and quality preserved. The PL measurement showed the nanomembrane peak was shifted by 19 meV towards higher energies with respect to that of the as-grown heterostructure. The HEMTs on the nanomembrane exhibited no degradation of the output characteristics, and the input two-terminal measurement confirmed a slightly decreased leakage current.

scholarly journals A modeling and performance of the triple field plate HEMT

2019 ◽  
Vol 10 (1) ◽  
pp. 398
Author(s):  
Kourdi Zakarya ◽  
Abdelkhader Hamdoun
Keyword(s):  
Aluminum Oxide ◽  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Field Plate ◽  
Field Peak ◽  
And Performance ◽  
Multiple Field

We present this work by two steps. In the first one, the new structure proposed of the FP-HEMTs device (Field plate High Electron Mobility Transistor) with a T-gate on an 4H-SIC substrate to optimize these electrical performances, multiple field-plates were used with aluminum oxide to split the single electric field peak into several smaller peaks, and as passivation works to reduce scaling leakage current. In the next, we include a modeling of a simulation in the Tcad-Silvaco Software for realizing the study of the influence of negative voltage applied to gate T-shaped in OFF state time and high power with ambient temperature, the performance differences between the 3FP and the SFP devices are discussed in detail.

scholarly journals High power microwave damage mechanism on high electron mobility transistor

2016 ◽  
Vol 65 (16) ◽  
pp. 168501
Author(s):  
Li Zhi-Peng ◽  
Li Jing ◽  
Sun Jing ◽  
Liu Yang ◽  
Fang Jin-Yong
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Damage Mechanism ◽  
High Electron ◽  
High Electron Mobility ◽  
High Power Microwave ◽  
Power Microwave
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