Electrical characteristics of tunneling field-effect transistors with asymmetric channel thickness

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.024201 ◽

2017 ◽

Vol 56 (2) ◽

pp. 024201 ◽

Author(s):

Jungsik Kim ◽

Hyeongwan Oh ◽

Jiwon Kim ◽

M. Meyyappan ◽

Jeong-Soo Lee

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electrical Characteristics ◽

Asymmetric Channel ◽

Tunneling Field Effect Transistors ◽

Channel Thickness

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Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics

Solid-State Electronics ◽

10.1016/j.sse.2019.01.003 ◽

2019 ◽

Vol 154 ◽

pp. 1-6

Author(s):

Donghwan Lim ◽

Hoonhee Han ◽

Changhwan Choi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Channel Structure ◽

Electrical Characteristics ◽

Tunneling Field Effect Transistors

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The Enhancement of Electrical Characteristics of Tunneling Field-Effect Transistors with the Buried Cylindrical Gate

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2017.13423 ◽

2017 ◽

Vol 17 (6) ◽

pp. 4108-4111

Author(s):

Kee Tae Kim ◽

Hyun Soo Jung ◽

Joonsung Ahn ◽

Keon-Ho Yoo ◽

Tae Whan Kim

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electrical Characteristics ◽

Tunneling Field Effect Transistors

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Impact of channel thickness fluctuation on performance of bilayer tunneling field effect transistors

10.7567/ssdm.2018.c-4-04 ◽

2018 ◽

Author(s):

K. Kato ◽

H. Matsui ◽

H. Tabata ◽

M. Takenaka ◽

S. Takagi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors ◽

Channel Thickness

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Designing band-to-band tunneling field-effect transistors with 2D semiconductors for next-generation low-power VLSI

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409682 ◽

2015 ◽

Author(s):

Wei Cao ◽

Junkai Jiang ◽

Jiahao Kang ◽

Deblina Sarkar ◽

Wei Liu ◽

...

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistors ◽

Next Generation ◽

2D Semiconductors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors

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Study of fully-depleted Ge double-gate n-type Tunneling Field-Effect Transistors for improvement in on-state current and sub-threshold swing

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2017.08.014 ◽

2018 ◽

Vol 95 ◽

pp. 51-58 ◽

Author(s):

Xiangyu Liu ◽

Huiyong Hu ◽

Meng Wang ◽

Heming Zhang ◽

Shimin Cui ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Fully Depleted ◽

Tunneling Field Effect Transistors

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Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3510502 ◽

2010 ◽

Vol 108 (10) ◽

pp. 104503 ◽

Author(s):

M. Abul Khayer ◽

Roger K. Lake

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors ◽

Gan Nanowire ◽

And Performance

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Photoswitchable organic field-effect transistors and memory elements comprising an interfacial photochromic layer

Chemical Communications ◽

10.1039/c5cc00711a ◽

2015 ◽

Vol 51 (28) ◽

pp. 6130-6132 ◽

Author(s):

Lyubov A. Frolova ◽

Pavel A. Troshin ◽

Diana K. Susarova ◽

Alexander V. Kulikov ◽

Nataliya A. Sanina ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Memory Devices ◽

Electrical Characteristics ◽

Organic Field Effect Transistors

Memory devices with superior electrical characteristics were designed using an interfacial spirooxazine layer introduced between dielectric and semiconductor layers in OFETs.

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Self-aligned fabrication of 10 nm wide asymmetric trenches for Si/SiGe heterojunction tunneling field effect transistors using nanoimprint lithography, shadow evaporation, and etching

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3237138 ◽

2009 ◽

Vol 27 (6) ◽

pp. 2790 ◽

Author(s):

Chao Wang ◽

Stephen Y. Chou

Keyword(s):

Nanoimprint Lithography ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors ◽

Shadow Evaporation

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Are Si/SiGe Tunneling Field-Effect Transistors a Good Idea?

ECS Meeting Abstracts ◽

10.1149/ma2010-02/30/1892 ◽

2010 ◽

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

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