Superlattice Structure a-Si Films Prepared by Photo-CVD Method and Their Application to a-Si Solar Cells.

1986 ◽  
Author(s):  
H. Tarui ◽  
T. Matsuyama ◽  
S. Tsuda ◽  
Y. Hishikawa ◽  
T. Takahama ◽  
...  
Keyword(s):  
Solar Cells ◽  
Cvd Method ◽  
Superlattice Structure ◽  
Si Solar Cells ◽  
Si Films

High Quality a-Si Films and Superlattice Structure p-Layer a-Si Solar Cells

1986 ◽  
Vol 70 ◽  
Author(s):  
Shoichi Nakano ◽  
Shinya Tsuda ◽  
Hisaki Tarui ◽  
Tsuyoshi Takahama ◽  
Hisao Haku ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conversion Efficiency ◽  
Reaction Chamber ◽  
High Quality ◽  
Cvd Method ◽  
Superlattice Structure ◽  
Si Solar Cells ◽  
New Material ◽  
Si Films ◽  
First Time

ABSTRACTAs a new preparation method for high-quality a-Si films, we have developed the super chamber, a separated UHV reaction chamber system. A low impurity concentration and excellent film properties were obtained by the super chamber. A conversion efficiency of 11.7% was obtained for an a-Si solar cell using a high-quality i-layer deposited by the super chamber, and a p-layer fabricated by a photo-CVD method.As a new material, amorphous superlattice structure films were fabricated by the photo-CVD method for the first time. Quantization effects and low damage to the interfaces were observed. Superlattice structure p-layer a-Si solar cells were fabricated for the first time, and a conversion efficiency of 10.5% was obtained.

Superlattice Structure a-Si Films Fabricated by the Photo-CVD Method and their Application to Solar Cells

1987 ◽  
Vol 26 (Part 1, No. 1) ◽  
pp. 28-32 ◽  
Author(s):  
Shinya Tsuda ◽  
Hisaki Tarui ◽  
Takao Matsuyama ◽  
Tsuyoshi Takahama ◽  
Shoichirou Nakayama ◽  
...  
Keyword(s):  
Solar Cells ◽  
Cvd Method ◽  
Superlattice Structure ◽  
Si Films

High-Quality a-Si-Based Alloys : a-SiGe Films Fabricated in a Super Chamber and Superlattice Structure a-Si Films Prepared by a Photo-CVD Method

1987 ◽  
Vol 95 ◽  
Author(s):  
Shinya Tsuda ◽  
Hisao Haku ◽  
Hisaki Tarui ◽  
Takao Matsuyama ◽  
Katsunobu Sayama ◽  
...  
Keyword(s):  
Conversion Efficiency ◽  
Photovoltaic Effect ◽  
High Vacuum ◽  
Reaction Chamber ◽  
Wide Bandgap ◽  
Ultra High Vacuum ◽  
High Quality ◽  
Cvd Method ◽  
Superlattice Structure ◽  
Si Films

AbstractIn order to improve the conversion efficiency of a-Si solar cells, high-quality a-Si based alloys of both narrow handgap and wide bandgap were studied.Concerning the narrow bandgap material, we found a particular dependence of film qualities on substrate temperature. In addition, high-quality a-SiGe:H films were obtained by using a super chamber (separated ultra-high vacuum reaction chamber).As for the high-quality wide bandgap material, a-Si/a-SiC superlattice structure films fabricated by a photo-CVD method were studied for the first time. From the analysis of their properties, we found that the superlattice structure p-layer was an active layer for photovoltaic effect. A conversion efficiency of 11.2% has been obtained for a pin a-Si solar cell whose player was of the superlattice structure.

The Influence of the Si-H2Bond on the Light-Induced Effect in a-Si Films and a-Si Solar Cells

1989 ◽  
Vol 28 (Part 1, No. 10) ◽  
pp. 1762-1768 ◽  
Author(s):  
Noboru Nakamura ◽  
Tsuyoshi Takahama ◽  
Masao Isomura ◽  
Masato Nishikuni ◽  
Kazuhiro Yoshida ◽  
...  
Keyword(s):  
Solar Cells ◽  
Si Solar Cells ◽  
Si Films

Development of optimum p-nc-Si window layers for nc-Si solar cells

2017 ◽  
Vol 19 (32) ◽  
pp. 21357-21363 ◽  
Author(s):  
Praloy Mondal ◽  
Debajyoti Das
Keyword(s):  
Solar Cells ◽  
Low Power ◽  
Growth Temperature ◽  
Si Solar Cells ◽  
Si Films ◽  
P Type

p-Type nc-Si (p-nc-Si) films have been optimized under low growth temperature (∼180 °C) and low power (∼30 W) parametric conditions in 13.56 MHz RF-PECVD.

High efficiency a-Si solar cells with a superlattice structure p-layer and stable a-Si solar cells with reduced SiH2 bond density

1987 ◽  
Vol 97-98 ◽  
pp. 289-292 ◽  
Author(s):  
Y. Kuwano ◽  
H. Tarui ◽  
T. Takahama ◽  
M. Nishikuni ◽  
Y. Hishikawa ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Superlattice Structure ◽  
Bond Density ◽  
Si Solar Cells

High Performance A–Si Solar Cells and Narrow Bandgap Materials

1985 ◽  
Vol 49 ◽  
Author(s):  
Shoichi Nakano ◽  
Yasuo Kishi ◽  
Michitoshi Ohnishi ◽  
Shinya Tsuda ◽  
Hisashi Shibuya ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conversion Efficiency ◽  
High Performance ◽  
Reaction Chamber ◽  
Interface Properties ◽  
High Quality ◽  
Cvd Method ◽  
Si Solar Cells ◽  
Narrow Bandgap ◽  
First Time

AbstractHigh performance a-Si solar cells were developed. A conversion efficiency of 11.5% was achieved for a textured TCO/p-SiC/in/Ag structure with a size of 1 cm2 using the high quality i-layer fabricated by a new consecutive, separated reaction chamber apparatus. A conversion efficiency of 9.0% was obtained with a size of 10cm × 10cm. A high quality a-SiGe:H:F, which is a new narrow bandgap material for a-Si solar cells, was fabricated by a glow discharge decomposition of SiF4 + GeF4 + H2.A photo-CVD method was investigated in order to improve the interface properties of a–Si solar cells. A conversion efficiency of 11.0% was obtained with a solar cell in which the p-layer is fabricated by the photo-CVD method. a-SiGe:H films were fabricated by the photo-CVD method for the first time as a narrow bandgap material for multi-bandgap a-Si solar cells.

Development of a-Si solar cells using “liquid–Si printing”

2014 ◽  
Vol 92 (7/8) ◽  
pp. 928-931 ◽  
Author(s):  
Hiroko Murayama ◽  
Tatsushi Ohyama ◽  
Akira Terakawa ◽  
Hideyuki Takagishi ◽  
Takashi Masuda ◽  
...  
Keyword(s):  
Solar Cells ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Deposition ◽  
Plasma Cvd ◽  
Film Properties ◽  
Plasma Damage ◽  
Cvd Method ◽  
Si Solar Cells ◽  
Conversion Efficiencies ◽  
Hydrogenated Amorphous

Film properties of hydrogenated amorphous silicon (a-Si:H) fabricated by “liquid–Si printing” (LSP) were investigated in detail and compared to the conventional plasma enhanced chemical deposition (plasma–CVD) method. LSP a-Si:H films (LSP films) had lower film density and larger size void than the a-Si:H films deposited by plasma–CVD (CVD films). On the other hand, the LSP films had high photoconductivity comparable to device grade a-Si:H films and higher photostability than the CVD films. Thus, the LSP films were drastically different from conventional CVD films. The conversion efficiency of the bifacial solar cells (glass/TCO/n(LSP film)/i(LSP film)/p(CVD film)/TCO/electrode), which was a problem because of the missing link between high photoconductivity and low cell performance, were improved. Undoped CVD film was inserted between the i- and p-layers to suppress the plasma damage to the active layer printed by LSP when depositing a B doped a-Si:H by plasma–CVD. As a result, we achieved conversion efficiencies of 1.1% with n side incidence and 3.1% with p side incidence.

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